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Contreras, O., Ruiz-Zepeda, F., Avalos-Borja, M., Dadgar, A., Krost, A. (2016) Termination of hollow core nanopipes in GaN by an AlN interlayer. Journal of Crystal Growth, 455. 43-48 doi:10.1016/j.jcrysgro.2016.09.027

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Reference TypeJournal (article/letter/editorial)
TitleTermination of hollow core nanopipes in GaN by an AlN interlayer
JournalJournal of Crystal Growth
AuthorsContreras, O.Author
Ruiz-Zepeda, F.Author
Avalos-Borja, M.Author
Dadgar, A.Author
Krost, A.Author
Year2016 (December)Volume455
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2016.09.027Search in ResearchGate
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Mindat Ref. ID2912497Long-form Identifiermindat:1:5:2912497:0
GUID0
Full ReferenceContreras, O., Ruiz-Zepeda, F., Avalos-Borja, M., Dadgar, A., Krost, A. (2016) Termination of hollow core nanopipes in GaN by an AlN interlayer. Journal of Crystal Growth, 455. 43-48 doi:10.1016/j.jcrysgro.2016.09.027
Plain TextContreras, O., Ruiz-Zepeda, F., Avalos-Borja, M., Dadgar, A., Krost, A. (2016) Termination of hollow core nanopipes in GaN by an AlN interlayer. Journal of Crystal Growth, 455. 43-48 doi:10.1016/j.jcrysgro.2016.09.027
In(2016) Journal of Crystal Growth Vol. 455. Elsevier BV

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Ruiz-Zepeda, F., Contreras, O., Dadgar, A., Krost, A. (2008) GaN growth on silane exposed AlN seed layers. physica status solidi (c), 5 (6). 1675-1677 doi:10.1002/pssc.200778583
Ruiz-Zepeda, F., Contreras, O., Dadgar, A., Krost, A. (2010) Microstructure of gallium nitride films grown on silicon (110). Applied Physics Letters, 96 (23). 231908pp. doi:10.1063/1.3449126
Schulze, F., Dadgar, A., Bläsing, J., Krost, A. (2004) GaN heteroepitaxy on Si(001). Journal of Crystal Growth, 272 (1). 496-499 doi:10.1016/j.jcrysgro.2004.08.065
Dadgar, A., Krost, A., Christen, J., Bastek, B., Bertram, F., Krtschil, A., Hempel, T., Bläsing, J., Haboeck, U., Hoffmann, A. (2006) MOVPE growth of high-quality AlN. Journal of Crystal Growth, 297 (2). 306-310 doi:10.1016/j.jcrysgro.2006.09.046
Schulze, F., Dadgar, A., Bläsing, J., Hempel, T., Diez, A., Christen, J., Krost, A. (2006) Growth of single-domain GaN layers on Si(001) by metalorganic vapor-phase epitaxy. Journal of Crystal Growth, 289 (2). 485-488 doi:10.1016/j.jcrysgro.2005.12.073
Dadgar, A., Hums, C., Diez, A., Bläsing, J., Krost, A. (2006) Growth of blue GaN LED structures on 150-mm Si(111). Journal of Crystal Growth, 297 (2). 279-282 doi:10.1016/j.jcrysgro.2006.09.032
Dadgar, A., Poschenrieder, M., Bläsing, J., Contreras, O., Bertram, F., Riemann, T., Reiher, A., Kunze, M., Daumiller, I., Krtschil, A., Diez, A., Kaluza, A., Modlich, A., Kamp, M., Christen, J., Ponce, F.A., Kohn, E., Krost, A. (2003) MOVPE growth of GaN on Si(111) substrates. Journal of Crystal Growth, 248. 556-562 doi:10.1016/s0022-0248(02)01894-8
Reiher, F., Dadgar, A., Bläsing, J., Wieneke, M., Krost, A. (2010) Metalorganic vapor-phase epitaxy of GaN layers on Si substrates with Si(110) and other high-index surfaces. Journal of Crystal Growth, 312 (2). 180-184 doi:10.1016/j.jcrysgro.2009.10.032
Contreras, O., Ponce, F. A., Christen, J., Dadgar, A., Krost, A. (2002) Dislocation annihilation by silicon delta-doping in GaN epitaxy on Si. Applied Physics Letters, 81 (25). 4712-4714 doi:10.1063/1.1529309
Dadgar, A., Fritze, S., Schulz, O., Hennig, J., Bläsing, J., Witte, H., Diez, A., Heinle, U., Kunze, M., Daumiller, I., Haberland, K., Krost, A. (2013) Anisotropic bow and plastic deformation of GaN on silicon. Journal of Crystal Growth, 370. 278-281 doi:10.1016/j.jcrysgro.2012.07.017
VĂ©zian, S., Damilano, B., Natali, F., Khalfioui, M. Al, Massies, J. (2016) AlN interlayer to improve the epitaxial growth of SmN on GaN (0001). Journal of Crystal Growth, 450. 22-27 doi:10.1016/j.jcrysgro.2016.06.006
 
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