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Yamashita, T., Matsuhata, H., Naijo, T., Momose, K., Osawa, H. (2016) Structural analysis of the 3C|4H boundaries formed on prismatic planes in 4H-SiC epitaxial films. Journal of Crystal Growth, 455. 172-180 doi:10.1016/j.jcrysgro.2016.10.006

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Reference TypeJournal (article/letter/editorial)
TitleStructural analysis of the 3C|4H boundaries formed on prismatic planes in 4H-SiC epitaxial films
JournalJournal of Crystal Growth
AuthorsYamashita, T.Author
Matsuhata, H.Author
Naijo, T.Author
Momose, K.Author
Osawa, H.Author
Year2016 (December)Volume455
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2016.10.006Search in ResearchGate
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Mindat Ref. ID2912553Long-form Identifiermindat:1:5:2912553:5
GUID0
Full ReferenceYamashita, T., Matsuhata, H., Naijo, T., Momose, K., Osawa, H. (2016) Structural analysis of the 3C|4H boundaries formed on prismatic planes in 4H-SiC epitaxial films. Journal of Crystal Growth, 455. 172-180 doi:10.1016/j.jcrysgro.2016.10.006
Plain TextYamashita, T., Matsuhata, H., Naijo, T., Momose, K., Osawa, H. (2016) Structural analysis of the 3C|4H boundaries formed on prismatic planes in 4H-SiC epitaxial films. Journal of Crystal Growth, 455. 172-180 doi:10.1016/j.jcrysgro.2016.10.006
In(2016) Journal of Crystal Growth Vol. 455. Elsevier BV

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Yamashita, T., Hayashi, S., Naijo, T., Momose, K., Osawa, H., Senzaki, J., Kojima, K., Kato, T., Okumura, H. (2017) Characterization of stacking faults with emission wavelengths of over 500 nm formed in 4H-SiC epitaxial films. Journal of Crystal Growth, 476. 99-106 doi:10.1016/j.jcrysgro.2017.08.008
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Tokuda, Y., Yamashita, T., Kamata, I., Naijo, T., Miyazawa, T., Hayashi, S., Hoshino, N., Kato, T., Okumura, H., Kimoto, T., Tsuchida, H. (2017) Structural analysis of double-layer Shockley stacking faults formed in heavily-nitrogen-doped 4H-SiC during annealing. Journal of Applied Physics, 122 (4). 45707pp. doi:10.1063/1.4996098
Ohno, T., Yamaguchi, H., Kuroda, S., Kojima, K., Suzuki, T., Arai, K. (2004) Influence of growth conditions on basal plane dislocation in 4H-SiC epitaxial layer. Journal of Crystal Growth, 271 (1). 1-7 doi:10.1016/j.jcrysgro.2004.04.044
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Suo, H., Eto, K., Osawa, H., Kato, T., Okumura, H. (2022) Threading dislocation increase in the initial stage of growth of nitrogen and boron co-doped 4H-SiC by physical vapor transport. Journal of Crystal Growth, 598. 126876 doi:10.1016/j.jcrysgro.2022.126876
Suo, H., Eto, K., Ise, T., Tokuda, Y., Osawa, H., Tsuchida, H., Kato, T., Okumura, H. (2018) Crystal growth and evaluation of nitrogen and aluminum co-doped N-type 4H-SiC grown by physical vapor transport. Journal of Crystal Growth, 498. 224-229 doi:10.1016/j.jcrysgro.2018.06.019
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