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Zaus, R. (1993) An improved deviation parameter for the simulation of dynamical X-ray diffraction on epitaxic heterostructures. Journal of Applied Crystallography, 26 (6). 801-811 doi:10.1107/s0021889893005643

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Reference TypeJournal (article/letter/editorial)
TitleAn improved deviation parameter for the simulation of dynamical X-ray diffraction on epitaxic heterostructures
JournalJournal of Applied Crystallography
AuthorsZaus, R.Author
Year1993 (December 1)Volume26
Issue6
PublisherInternational Union of Crystallography (IUCr)
DOIdoi:10.1107/s0021889893005643Search in ResearchGate
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Mindat Ref. ID4663003Long-form Identifiermindat:1:5:4663003:4
GUID0
Full ReferenceZaus, R. (1993) An improved deviation parameter for the simulation of dynamical X-ray diffraction on epitaxic heterostructures. Journal of Applied Crystallography, 26 (6). 801-811 doi:10.1107/s0021889893005643
Plain TextZaus, R. (1993) An improved deviation parameter for the simulation of dynamical X-ray diffraction on epitaxic heterostructures. Journal of Applied Crystallography, 26 (6). 801-811 doi:10.1107/s0021889893005643
In(1993, December) Journal of Applied Crystallography Vol. 26 (6) International Union of Crystallography (IUCr)

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Wallace, C. A., Ward, R. C. C. (1975) X-ray diffraction techniques for the analysis of epitaxic thin films. Journal of Applied Crystallography, 8 (5) 545-556 doi:10.1107/s0021889875011235
Boulle, A., Masson, O., Guinebretière, R., Dauger, A. (2003) A new method for the determination of strain profiles in epitaxic thin films using X-ray diffraction. Journal of Applied Crystallography, 36 (6). 1424-1431 doi:10.1107/s0021889803020351
Brizard, C., Rolland, G., Laugier, F. (1993) Twinning study of CdTe epitaxic layer by X-ray ι-scan measurement. Journal of Applied Crystallography, 26 (4). 570-573 doi:10.1107/s0021889893001517
Morelhão, Sérgio L., Domagala, Jarek Z. (2007) Hybrid reciprocal space for X-ray diffraction in epitaxic layers. Journal of Applied Crystallography, 40 (3). 546-551 doi:10.1107/s002188980701521x
Caro, L. De, Tapfer, L. (1998) Strain Determination in Epitaxic Films of Materials of Orthorhombic Symmetry by High-Resolution X-ray Diffraction. Journal of Applied Crystallography, 31 (6). 831-834 doi:10.1107/s0021889897019602
Isherwood, B. J., Wallace, C. A. (1968) The analysis of epitaxic growth layers of silicon carbide by X-ray diffraction topography. Journal of Applied Crystallography, 1 (3) 145-153 doi:10.1107/s0021889868005200
Popović, S. (1971) An X-ray diffraction method for lattice parameter measurements from correspondingKα andKβ reflexions. Journal of Applied Crystallography, 4 (3) 240-241 doi:10.1107/s0021889871006769
Bassignana, I. C., Tan, C. C. (1989) Determination of epitaxic-layer composition and thickness by double-crystal X-ray diffraction. Journal of Applied Crystallography, 22 (3). 269-276 doi:10.1107/s0021889888014773
Cernik, R. J., Louër, D. (1993) Indexing unit cells from synchrotron X-ray powder diffraction data. Journal of Applied Crystallography, 26 (2). 277-280 doi:10.1107/s0021889892010665
Valdrè, Giovanni (1999) An improved low-power-consumption heating stage for X-ray powder diffraction. Journal of Applied Crystallography, 32 (3). 543-545 doi:10.1107/s0021889899000990
Fraser, R. D. B., MacRae, T. P., Suzuki, E. (1978) An improved method for calculating the contribution of solvent to the X-ray diffraction pattern of biological molecules. Journal of Applied Crystallography, 11 (6) 693-694 doi:10.1107/s0021889878014296
 
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