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Morelhão, Sérgio L., Domagala, Jarek Z. (2007) Hybrid reciprocal space for X-ray diffraction in epitaxic layers. Journal of Applied Crystallography, 40 (3). 546-551 doi:10.1107/s002188980701521x

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Reference TypeJournal (article/letter/editorial)
TitleHybrid reciprocal space for X-ray diffraction in epitaxic layers
JournalJournal of Applied Crystallography
AuthorsMorelhão, Sérgio L.Author
Domagala, Jarek Z.Author
Year2007 (June 1)Volume40
Issue3
PublisherInternational Union of Crystallography (IUCr)
DOIdoi:10.1107/s002188980701521xSearch in ResearchGate
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Mindat Ref. ID4670029Long-form Identifiermindat:1:5:4670029:0
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Full ReferenceMorelhão, Sérgio L., Domagala, Jarek Z. (2007) Hybrid reciprocal space for X-ray diffraction in epitaxic layers. Journal of Applied Crystallography, 40 (3). 546-551 doi:10.1107/s002188980701521x
Plain TextMorelhão, Sérgio L., Domagala, Jarek Z. (2007) Hybrid reciprocal space for X-ray diffraction in epitaxic layers. Journal of Applied Crystallography, 40 (3). 546-551 doi:10.1107/s002188980701521x
In(2007, June) Journal of Applied Crystallography Vol. 40 (3) International Union of Crystallography (IUCr)

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Morelhão, S. L., Abramof, E. (1999) Investigation of Bragg surface diffraction in semiconductors and epitaxic structures by reciprocal-space analysis. Journal of Applied Crystallography, 32 (5). 871-877 doi:10.1107/s0021889899007013
Domagała, Jarosław Z., Morelhão, Sérgio L., Sarzyński, Marcin, Maździarz, Marcin, Dłużewski, Paweł, Leszczyński, Michał (2016) Hybrid reciprocal lattice: application to layer stress determination in GaAlN/GaN(0001) systems with patterned substrates. Journal of Applied Crystallography, 49 (3). 798-805 doi:10.1107/s1600576716004441
Holý, V., Wolf, K., Kastner, M., Stanzl, H., Gebhardt, W. (1994) X-ray triple-crystal diffractometry of defects in epitaxic layers. Journal of Applied Crystallography, 27 (4). 551-557 doi:10.1107/s0021889894000208
Morelhão, Sérgio L., Fornari, Celso I., Rappl, Paulo H. O., Abramof, Eduardo (2017) Nanoscale characterization of bismuth telluride epitaxial layers by advanced X-ray analysis. Journal of Applied Crystallography, 50 (2). 399-410 doi:10.1107/s1600576717000760
Isherwood, B. J., Wallace, C. A. (1968) The analysis of epitaxic growth layers of silicon carbide by X-ray diffraction topography. Journal of Applied Crystallography, 1 (3) 145-153 doi:10.1107/s0021889868005200
Morelhão, Sérgio L., Remédios, Cláudio M. R., Calligaris, Guilherme A., Nisbet, Gareth (2017) X-ray dynamical diffraction in amino acid crystals: a step towards improving structural resolution of biological moleculesviaphysical phase measurements. Journal of Applied Crystallography, 50 (3). 689-700 doi:10.1107/s1600576717004757
Morelhão, S. L., Cardoso, L. P. (1996) X-ray Multiple Diffraction Phenomenon in the Evaluation of Semiconductor Crystalline Perfection. Journal of Applied Crystallography, 29 (4). 446-456 doi:10.1107/s0021889896003986
Morelhão, Sérgio L. (2003) An X-ray diffractometer for accurate structural invariant phase determination. Journal of Synchrotron Radiation, 10 (3). 236-241 doi:10.1107/s0909049503003789
Caro, L. De, Tapfer, L. (1998) Strain Determination in Epitaxic Films of Materials of Orthorhombic Symmetry by High-Resolution X-ray Diffraction. Journal of Applied Crystallography, 31 (6). 831-834 doi:10.1107/s0021889897019602
Zaus, R. (1993) An improved deviation parameter for the simulation of dynamical X-ray diffraction on epitaxic heterostructures. Journal of Applied Crystallography, 26 (6). 801-811 doi:10.1107/s0021889893005643
Wallace, C. A., Ward, R. C. C. (1975) X-ray diffraction techniques for the analysis of epitaxic thin films. Journal of Applied Crystallography, 8 (5) 545-556 doi:10.1107/s0021889875011235
 
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