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Rouvière, J, Okuno, H, Jouneau, P, Bayle-Guillemaud, P, Daudin, B (2011) Counting Tm Dopant Atoms in and Around GaN Dots using Scannning Transmission Electron Microscopy. Microscopy and Microanalysis, 17. 1284-1285 doi:10.1017/s143192761100729x

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Reference TypeJournal (article/letter/editorial)
TitleCounting Tm Dopant Atoms in and Around GaN Dots using Scannning Transmission Electron Microscopy
JournalMicroscopy and Microanalysis
AuthorsRouvière, JAuthor
Okuno, HAuthor
Jouneau, PAuthor
Bayle-Guillemaud, PAuthor
Daudin, BAuthor
Year2011 (July)Volume17
PublisherCambridge University Press (CUP)
DOIdoi:10.1017/s143192761100729xSearch in ResearchGate
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Mindat Ref. ID4856319Long-form Identifiermindat:1:5:4856319:8
GUID0
Full ReferenceRouvière, J, Okuno, H, Jouneau, P, Bayle-Guillemaud, P, Daudin, B (2011) Counting Tm Dopant Atoms in and Around GaN Dots using Scannning Transmission Electron Microscopy. Microscopy and Microanalysis, 17. 1284-1285 doi:10.1017/s143192761100729x
Plain TextRouvière, J, Okuno, H, Jouneau, P, Bayle-Guillemaud, P, Daudin, B (2011) Counting Tm Dopant Atoms in and Around GaN Dots using Scannning Transmission Electron Microscopy. Microscopy and Microanalysis, 17. 1284-1285 doi:10.1017/s143192761100729x
In(2011) Microscopy and Microanalysis Vol. 17. Cambridge University Press (CUP)


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