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Okuno, H., Rouvière, J.-L., Jouneau, P.-H., Bayle-Guillemaud, P., Daudin, B. (2010) Visualization of Tm dopant atoms diffused out of GaN quantum dots. Applied Physics Letters, 96 (25). 251908pp. doi:10.1063/1.3455893

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Reference TypeJournal (article/letter/editorial)
TitleVisualization of Tm dopant atoms diffused out of GaN quantum dots
JournalApplied Physics Letters
AuthorsOkuno, H.Author
Rouvière, J.-L.Author
Jouneau, P.-H.Author
Bayle-Guillemaud, P.Author
Daudin, B.Author
Year2010 (June 21)Volume96
Issue25
PublisherAIP Publishing
DOIdoi:10.1063/1.3455893Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8584534Long-form Identifiermindat:1:5:8584534:3
GUID0
Full ReferenceOkuno, H., Rouvière, J.-L., Jouneau, P.-H., Bayle-Guillemaud, P., Daudin, B. (2010) Visualization of Tm dopant atoms diffused out of GaN quantum dots. Applied Physics Letters, 96 (25). 251908pp. doi:10.1063/1.3455893
Plain TextOkuno, H., Rouvière, J.-L., Jouneau, P.-H., Bayle-Guillemaud, P., Daudin, B. (2010) Visualization of Tm dopant atoms diffused out of GaN quantum dots. Applied Physics Letters, 96 (25). 251908pp. doi:10.1063/1.3455893
In(2010, June) Applied Physics Letters Vol. 96 (25) AIP Publishing

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Rouvière, J, Okuno, H, Jouneau, P, Bayle-Guillemaud, P, Daudin, B (2011) Counting Tm Dopant Atoms in and Around GaN Dots using Scannning Transmission Electron Microscopy. Microscopy and Microanalysis, 17. 1284-1285 doi:10.1017/s143192761100729x
Rouvière, J -L, Okuno, H, Jouneau, P H, Bayle-Guillemaud, P, Daudin, B (2011) Counting Tm dopant atoms around GaN dots using high-angle annular dark field images. Journal of Physics: Conference Series, 326. 12032pp. doi:10.1088/1742-6596/326/1/012032
Adelmann, C., Brault, J., Rouvière, J.-L., Mariette, H., Mula, Guido, Daudin, B. (2002) Atomic-layer epitaxy of GaN quantum wells and quantum dots on (0001) AlN. Journal of Applied Physics, 91 (8). 5498-5500 doi:10.1063/1.1458049
Rouvière, J. L., Simon, J., Pelekanos, N., Daudin, B., Feuillet, G. (1999) Preferential nucleation of GaN quantum dots at the edge of AlN threading dislocations. Applied Physics Letters, 75 (17). 2632-2634 doi:10.1063/1.125101
Brault, J., Tanaka, S., Sarigiannidou, E., Rouvière, J.-L., Daudin, B., Feuillet, G., Nakagawa, H. (2003) Linear alignment of GaN quantum dots on AlN grown on vicinal SiC substrates. Journal of Applied Physics, 93 (5). 3108-3110 doi:10.1063/1.1538334
Widmann, F., Daudin, B., Feuillet, G., Samson, Y., Rouvière, J. L., Pelekanos, N. (1998) Growth kinetics and optical properties of self-organized GaN quantum dots. Journal of Applied Physics, 83 (12). 7618-7624 doi:10.1063/1.367878
Arlery, M., Rouvière, J. L., Widmann, F., Daudin, B., Feuillet, G., Mariette, H. (1999) Quantitative characterization of GaN quantum-dot structures in AlN by high-resolution transmission electron microscopy. Applied Physics Letters, 74 (22). 3287-3289 doi:10.1063/1.123321
Sarigiannidou, E., Monroy, E., Daudin, B., Rouvière, J. L., Andreev, A. D. (2005) Strain distribution in GaN∕AlN quantum-dot superlattices. Applied Physics Letters, 87 (20). 203112pp. doi:10.1063/1.2123394
Cho, Yong-Hoon, Kwack, H. S., Kwon, B. J., Barjon, J., Brault, J., Daudin, B., Dang, Le Si (2006) Comparison of carrier dynamics in GaN quantum dots and GaN quantum wells embedded in low-Al-content AlGaN waveguides. Applied Physics Letters, 89 (25). 251914pp. doi:10.1063/1.2420776
Martinez-Guerrero, E., Chabuel, F., Daudin, B., Rouvière, J. L., Mariette, H. (2002) Control of the morphology transition for the growth of cubic GaN/AlN nanostructures. Applied Physics Letters, 81 (27). 5117-5119 doi:10.1063/1.1527975
Founta, S., Bougerol, C., Mariette, H., Daudin, B., Vennéguès, P. (2007) Anisotropic morphology of nonpolar a-plane GaN quantum dots and quantum wells. Journal of Applied Physics, 102 (7). 74304pp. doi:10.1063/1.2781569
 
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