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Adelmann, C., Brault, J., Rouvière, J.-L., Mariette, H., Mula, Guido, Daudin, B. (2002) Atomic-layer epitaxy of GaN quantum wells and quantum dots on (0001) AlN. Journal of Applied Physics, 91 (8). 5498-5500 doi:10.1063/1.1458049

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Reference TypeJournal (article/letter/editorial)
TitleAtomic-layer epitaxy of GaN quantum wells and quantum dots on (0001) AlN
JournalJournal of Applied Physics
AuthorsAdelmann, C.Author
Brault, J.Author
Rouvière, J.-L.Author
Mariette, H.Author
Mula, GuidoAuthor
Daudin, B.Author
Year2002 (April 15)Volume91
Issue8
PublisherAIP Publishing
DOIdoi:10.1063/1.1458049Search in ResearchGate
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Mindat Ref. ID5114554Long-form Identifiermindat:1:5:5114554:9
GUID0
Full ReferenceAdelmann, C., Brault, J., Rouvière, J.-L., Mariette, H., Mula, Guido, Daudin, B. (2002) Atomic-layer epitaxy of GaN quantum wells and quantum dots on (0001) AlN. Journal of Applied Physics, 91 (8). 5498-5500 doi:10.1063/1.1458049
Plain TextAdelmann, C., Brault, J., Rouvière, J.-L., Mariette, H., Mula, Guido, Daudin, B. (2002) Atomic-layer epitaxy of GaN quantum wells and quantum dots on (0001) AlN. Journal of Applied Physics, 91 (8). 5498-5500 doi:10.1063/1.1458049
In(2002, April) Journal of Applied Physics Vol. 91 (8) AIP Publishing

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Adelmann, C., Brault, J., Jalabert, D., Gentile, P., Mariette, H., Mula, Guido, Daudin, B. (2002) Dynamically stable gallium surface coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN. Journal of Applied Physics, 91 (12). 9638pp. doi:10.1063/1.1471923
Martinez-Guerrero, E., Adelmann, C., Chabuel, F., Simon, J., Pelekanos, N. T., Mula, Guido, Daudin, B., Feuillet, G., Mariette, H. (2000) Self-assembled zinc blende GaN quantum dots grown by molecular-beam epitaxy. Applied Physics Letters, 77 (6). 809-811 doi:10.1063/1.1306633
Adelmann, C., Gogneau, N., Sarigiannidou, E., Rouvière, J.-L., Daudin, B. (2002) GaN islanding by spontaneous rearrangement of a strained two-dimensional layer on (0001) AlN. Applied Physics Letters, 81 (16). 3064-3066 doi:10.1063/1.1515114
Brault, J., Tanaka, S., Sarigiannidou, E., Rouvière, J.-L., Daudin, B., Feuillet, G., Nakagawa, H. (2003) Linear alignment of GaN quantum dots on AlN grown on vicinal SiC substrates. Journal of Applied Physics, 93 (5). 3108-3110 doi:10.1063/1.1538334
Mula, Guido, Adelmann, C., Moehl, S., Oullier, J., Daudin, B. (2001) Surfactant effect of gallium during molecular-beam epitaxy of GaN on AlN (0001) Physical Review B, 64 (19) doi:10.1103/physrevb.64.195406
Daudin, Bruno, Feuillet, Guy, Mariette, Henri, Mula, Guido, Pelekanos, Nikolaos, Molva, Engin, Rouvière, Jean-Luc, Adelmann, Christoph, Guerrero, , Barjon, Julien, Chabuel, Francis, Bataillou, Benoit, Simon, Julia (2001) Self-Assembled GaN Quantum Dots Grown by Plasma-Assisted Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 40. 1892-1895 doi:10.1143/jjap.40.1892
Adelmann, C., Martinez-Guerrero, E., Barjon, J., Brault, J., Si Dang, Le, Mariette, H., Mula, G., Daudin, B. (2001) Atomic Layer Epitaxy of Hexagonal and Cubic GaN Nanostructures. physica status solidi (a), 188 (2). 673-676 doi:10.1002/1521-396x(200112)188:2<673::aid-pssa673>3.0.co;2-3
Gogneau, N., Enjalbert, F., Fossard, F., Hori, Y., Adelmann, C., Brault, J., Martinez-Guerrero, E., Simon, J., Bellet-Amalric, E., Jalabert, D., Pelekanos, N., Rouvière, J.-L., Daudin, B., Si Dang, Le, Mariette, H., Monroy, E. (2004) Recent progress in growth and physics of GaN/AlN quantum dots. physica status solidi (c), 1 (6). 1445-1450 doi:10.1002/pssc.200304083
Bourret, Alain, Adelmann, Christoph, Daudin, Bruno, Rouvière, Jean-Luc, Feuillet, Guy, Mula, Guido (2001) Strain relaxation in (0001) AlN/GaN heterostructures. Physical Review B, 63 (24) doi:10.1103/physrevb.63.245307
Adelmann, C., Sarigiannidou, E., Jalabert, D., Hori, Y., Rouvière, J.-L., Daudin, B., Fanget, S., Bru-Chevallier, C., Shibata, T., Tanaka, M. (2003) Growth and optical properties of GaN/AlN quantum wells. Applied Physics Letters, 82 (23). 4154-4156 doi:10.1063/1.1581386
Gogneau, N., Jalabert, D., Monroy, E., Sarigiannidou, E., Rouvière, J. L., Shibata, T., Tanaka, M., Gerard, J. M., Daudin, B. (2004) Influence of AlN overgrowth on structural properties of GaN quantum wells and quantum dots grown by plasma-assisted molecular beam epitaxy. Journal of Applied Physics, 96 (2). 1104-1110 doi:10.1063/1.1759785
 
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