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Haberfehlner, G., Bayle-Guillemaud, P., Audoit, G., Smith, M.J., Crawford, S., Gradečak, S., Morel, P.-H., Ernst, T., Gambacorti, N., Bleuet, P. (2013) Electron Tomography for 3D Nanoscale Characterization of Semiconductor Materials and Devices. Microscopy and Microanalysis, 19. 576-577 doi:10.1017/s143192761300487x

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Reference TypeJournal (article/letter/editorial)
TitleElectron Tomography for 3D Nanoscale Characterization of Semiconductor Materials and Devices
JournalMicroscopy and Microanalysis
AuthorsHaberfehlner, G.Author
Bayle-Guillemaud, P.Author
Audoit, G.Author
Smith, M.J.Author
Crawford, S.Author
Gradečak, S.Author
Morel, P.-H.Author
Ernst, T.Author
Gambacorti, N.Author
Bleuet, P.Author
Year2013 (August)Volume19
PublisherCambridge University Press (CUP)
DOIdoi:10.1017/s143192761300487xSearch in ResearchGate
Generate Citation Formats
Mindat Ref. ID4862829Long-form Identifiermindat:1:5:4862829:1
GUID0
Full ReferenceHaberfehlner, G., Bayle-Guillemaud, P., Audoit, G., Smith, M.J., Crawford, S., Gradečak, S., Morel, P.-H., Ernst, T., Gambacorti, N., Bleuet, P. (2013) Electron Tomography for 3D Nanoscale Characterization of Semiconductor Materials and Devices. Microscopy and Microanalysis, 19. 576-577 doi:10.1017/s143192761300487x
Plain TextHaberfehlner, G., Bayle-Guillemaud, P., Audoit, G., Smith, M.J., Crawford, S., Gradečak, S., Morel, P.-H., Ernst, T., Gambacorti, N., Bleuet, P. (2013) Electron Tomography for 3D Nanoscale Characterization of Semiconductor Materials and Devices. Microscopy and Microanalysis, 19. 576-577 doi:10.1017/s143192761300487x
In(2013) Microscopy and Microanalysis Vol. 19. Cambridge University Press (CUP)


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