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Kolíbal, Miroslav, Pejchal, Tomáš, Novák, Libor, Vystavěl, Tomáš, šikola, Tomáš (2016) The synergic effect of atomic hydrogen and catalyst spreading on Ge nanowire growth orientation and kinking. Microscopy and Microanalysis, 22. 732-733 doi:10.1017/s1431927616004517

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Reference TypeJournal (article/letter/editorial)
TitleThe synergic effect of atomic hydrogen and catalyst spreading on Ge nanowire growth orientation and kinking
JournalMicroscopy and Microanalysis
AuthorsKolíbal, MiroslavAuthor
Pejchal, TomášAuthor
Novák, LiborAuthor
Vystavěl, TomášAuthor
šikola, TomášAuthor
Year2016 (July)Volume22
PublisherCambridge University Press (CUP)
DOIdoi:10.1017/s1431927616004517Search in ResearchGate
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Mindat Ref. ID4877107Long-form Identifiermindat:1:5:4877107:0
GUID0
Full ReferenceKolíbal, Miroslav, Pejchal, Tomáš, Novák, Libor, Vystavěl, Tomáš, šikola, Tomáš (2016) The synergic effect of atomic hydrogen and catalyst spreading on Ge nanowire growth orientation and kinking. Microscopy and Microanalysis, 22. 732-733 doi:10.1017/s1431927616004517
Plain TextKolíbal, Miroslav, Pejchal, Tomáš, Novák, Libor, Vystavěl, Tomáš, šikola, Tomáš (2016) The synergic effect of atomic hydrogen and catalyst spreading on Ge nanowire growth orientation and kinking. Microscopy and Microanalysis, 22. 732-733 doi:10.1017/s1431927616004517
In(2016) Microscopy and Microanalysis Vol. 22. Cambridge University Press (CUP)

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Kolíbal, Miroslav, Vystavěl, Tomáš, Novák, Libor, Mach, Jindřich, Šikola, Tomáš (2011) In-situ observation of 〈110〉 oriented Ge nanowire growth and associated collector droplet behavior. Applied Physics Letters, 99 (14). 143113pp. doi:10.1063/1.3647774
Kolíbal, Miroslav, Kalousek, Radek, Vystavěl, Tomáš, Novák, Libor, Šikola, Tomáš (2012) Controlled faceting in 〈110〉 germanium nanowire growth by switching between vapor-liquid-solid and vapor-solid-solid growth. Applied Physics Letters, 100 (20). 203102pp. doi:10.1063/1.4714765
Druckmüllerová, Zdena, Kolíbal, Miroslav, Vystavěl, Tomáš, Šikola, Tomáš (2014) Toward Site-Specific Dopant Contrast in Scanning Electron Microscopy. Microscopy and Microanalysis, 20 (4). 1312-1317 doi:10.1017/s1431927614000968
Kolíbal, Miroslav, Novák, Libor, Shanley, Toby, Toth, Milos, Šikola, Tomáš (2016) Silicon oxide nanowire growth mechanisms revealed by real-time electron microscopy. Nanoscale, 8. 266-275 doi:10.1039/c5nr05152e
Novák, Libor, Wu, Min, Wandrol, Petr, Kolíbal, Miroslav, Vystavěl, Tomáš (2017) New approaches to in-situ heating in FIB/SEM systems. Microscopy and Microanalysis, 23. 928-929 doi:10.1017/s143192761700530x
Novák, Libor, Stárek, Jaroslav, Vystavěl, Tomáš, Mele, Luigi (2016) MEMS-based Heating Element for in-situ Dynamical Experiments on FIB/SEM Systems. Microscopy and Microanalysis, 22. 184-185 doi:10.1017/s143192761600177x
Pejchal, Tomáš, Bukvišová, Kristýna, Vallejos, Stella, Citterberg, Daniel, Šikola, Tomáš, Kolíbal, Miroslav (2022) Ga interaction with ZnO surfaces: Diffusion and melt-back etching. Applied Surface Science, 583. 152475pp. doi:10.1016/j.apsusc.2022.152475
Wandrol, Petr, Novák, Libor, Wu, Min, Vesseur, Ernst Jan, Vystavěl, Tomáš (2018) In-situ Heating in SEM and FIB/SEM Systems. Microscopy and Microanalysis, 24. 336-337 doi:10.1017/s1431927618002179
Novák, Tomáš, Kostelník, Petr, Konečný, Martin, Čechal, Jan, Kolíbal, Miroslav, Šikola, Tomáš (2019) Temperature effect on Al predose and AlN nucleation affecting the buffer layer performance for the GaN-on-Si based high-voltage devices. Japanese Journal of Applied Physics, 58. doi:10.7567/1347-4065/ab0d00
Vystavěl, Tomáš, Strakoš, Libor, Prokhodtseva, Anna, Han, Han, Stárek, Jaroslav, Stejskal, Pavel, Hantschel, Thomas (2019) Sample Orientation for Electron Channeling Contrast Imaging. Microscopy and Microanalysis, 25. 508-509 doi:10.1017/s1431927619003271
Mach, Jindřich, Šamořil, Tomáš, Kolíbal, Miroslav, Zlámal, Jakub, Voborny, Stanislav, Bartošík, Miroslav, Šikola, Tomáš (2014) Optimization of ion-atomic beam source for deposition of GaN ultrathin films. Review of Scientific Instruments, 85 (8). 83302pp. doi:10.1063/1.4892800
 
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