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Chang, Y. F., Thompson, H. W. (1963) Abrupt vs Diffused Semiconductor Junctions. Journal of Applied Physics, 34 (10). 3137-3138 doi:10.1063/1.1729137

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Reference TypeJournal (article/letter/editorial)
TitleAbrupt vs Diffused Semiconductor Junctions
JournalJournal of Applied Physics
AuthorsChang, Y. F.Author
Thompson, H. W.Author
Year1963 (October)Volume34
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.1729137Search in ResearchGate
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Mindat Ref. ID4927142Long-form Identifiermindat:1:5:4927142:5
GUID0
Full ReferenceChang, Y. F., Thompson, H. W. (1963) Abrupt vs Diffused Semiconductor Junctions. Journal of Applied Physics, 34 (10). 3137-3138 doi:10.1063/1.1729137
Plain TextChang, Y. F., Thompson, H. W. (1963) Abrupt vs Diffused Semiconductor Junctions. Journal of Applied Physics, 34 (10). 3137-3138 doi:10.1063/1.1729137
In(1963, October) Journal of Applied Physics Vol. 34 (10) AIP Publishing

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Chang, Y. F. (1963) Switch‐On Transients in p‐n Junctions. Journal of Applied Physics, 34 (7). 2056-2060 doi:10.1063/1.1729735
Chang, Y. F. (1967) The Conduction‐Diffusion Theory of Semiconductor Junctions. Journal of Applied Physics, 38 (2). 534-544 doi:10.1063/1.1709370
Benson, C. T. (1963) Approximation of an Ideal Dipole with a Solenoid. Journal of Applied Physics, 34 (10). 3136-3137 doi:10.1063/1.1729136
Iizima, Sigeru, Kikuchi, Makoto (1963) A Simple Method for Measuring Capacity vs Voltage Characteristics of Reverse-Biased GaP Diffused Junctions. Japanese Journal of Applied Physics, 2 (1) 67-68 doi:10.1143/jjap.2.67
Spitzer, W. G., Mead, C. A. (1963) Barrier Height Studies on Metal‐Semiconductor Systems. Journal of Applied Physics, 34 (10). 3061-3069 doi:10.1063/1.1729121
Unterkofler, George J. (1963) Theoretical Curves of Tunnel Resistivity vs Voltage. Journal of Applied Physics, 34 (10). 3143-3145 doi:10.1063/1.1729143
Van Overstraeten, R., Nuyts, W. (1972) Comparison of theoretical and experimental values of the capacitance of diffused junctions. Journal of Applied Physics, 43 (10). 4040-4050 doi:10.1063/1.1660872
Donohue, J. F., Wang, E. Y. (1986) Observation of radiative surface plasmons in metal‐oxide‐metal tunnel junctions. Journal of Applied Physics, 59 (9). 3137-3143 doi:10.1063/1.336892
Keller, W. H., Nordman, J. E. (1973) Niobium thin‐film Josephson junctions using a semiconductor barrier. Journal of Applied Physics, 44 (10). 4732-4738 doi:10.1063/1.1662027
Weinstein, Martin, Mlavsky, A. I. (1963) THE VOLTAGE BREAKDOWN OF GaAs ABRUPT JUNCTIONS. Applied Physics Letters, 2 (5). 97-99 doi:10.1063/1.1753796
Inskeep, C. N., Riggs, Earl, Eidson, W. W. (1963) Convenient Method for Measurement of the Depth of Very Shallow Diffused Junctions in Silicon. Review of Scientific Instruments, 34 (3). 310-311 doi:10.1063/1.1718352
 
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