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Park, R. M., Mar, H. A., Salansky, N. M. (1985) Photoluminescence properties of nitrogen‐doped ZnSe grown by molecular beam epitaxy. Journal of Applied Physics, 58 (2). 1047-1049 doi:10.1063/1.336212

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Reference TypeJournal (article/letter/editorial)
TitlePhotoluminescence properties of nitrogen‐doped ZnSe grown by molecular beam epitaxy
JournalJournal of Applied Physics
AuthorsPark, R. M.Author
Mar, H. A.Author
Salansky, N. M.Author
Year1985 (July 15)Volume58
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.336212Search in ResearchGate
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Mindat Ref. ID5024871Long-form Identifiermindat:1:5:5024871:5
GUID0
Full ReferencePark, R. M., Mar, H. A., Salansky, N. M. (1985) Photoluminescence properties of nitrogen‐doped ZnSe grown by molecular beam epitaxy. Journal of Applied Physics, 58 (2). 1047-1049 doi:10.1063/1.336212
Plain TextPark, R. M., Mar, H. A., Salansky, N. M. (1985) Photoluminescence properties of nitrogen‐doped ZnSe grown by molecular beam epitaxy. Journal of Applied Physics, 58 (2). 1047-1049 doi:10.1063/1.336212
In(1985, July) Journal of Applied Physics Vol. 58 (2) AIP Publishing

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Park, R. M., Mar, H. A., Salansky, N. M. (1985) Dominant intrinsic‐exciton related luminescence from ZnSe grown by molecular beam epitaxy. Applied Physics Letters, 46 (4). 386-387 doi:10.1063/1.95641
Park, R. M., Salansky, N. M. (1984) Surface structures and properties of ZnSe grown on (100)GaAs by molecular beam epitaxy. Applied Physics Letters, 44 (2). 249-251 doi:10.1063/1.94687
Mar, H. A., Salansky, N. (1984) Photoluminescence of CdTe grown on (001) InSb by molecular beam epitaxy. Journal of Applied Physics, 56 (8). 2369-2371 doi:10.1063/1.334253
Park, R. M., Kleiman, J., Mar, H. A., Smith, T. L. (1988) Antimony‐doped ZnSe grown by molecular‐beam epitaxy. Journal of Applied Physics, 63 (8). 2851-2853 doi:10.1063/1.340937
Mar, H. A., Chee, K. T., Salansky, N. (1984) CdTe films on (001) GaAs:Cr by molecular beam epitaxy. Applied Physics Letters, 44 (2). 237-239 doi:10.1063/1.94683
Kleiman, J., Park, R. M., Mar, H. A. (1988) On epilayer tilt in ZnSe/Ge heterostructures prepared by molecular‐beam epitaxy. Journal of Applied Physics, 64 (3). 1201-1205 doi:10.1063/1.341885
Mitsuyu, T., Ohkawa, K., Yamazaki, O. (1986) Photoluminescence properties of nitrogen‐doped ZnSe layers grown by molecular beam epitaxy with low‐energy ion doping. Applied Physics Letters, 49 (20). 1348-1350 doi:10.1063/1.97374
Zhu, Ziqiang, Takebayashi, Kazuhisa, Tanaka, Kiyotake, Ebisutani, Takashi, Kawamata, Junji, Yao, Takafumi (1994) Photoluminescence properties of nitrogen‐doped ZnSe grown by molecular‐beam epitaxy. Applied Physics Letters, 64 (1). 91-93 doi:10.1063/1.110878
Wang, S. Z., Yoon, S. F. (2003) Dynamic mechanisms in photoluminescence of gallium-doped ZnSe grown by molecular-beam epitaxy. Journal of Applied Physics, 93 (9). 5091-5094 doi:10.1063/1.1563822
Kuskovsky, Igor L., Tian, C., Sudbrack, C., Neumark, G. F., Lin, W.-C., Guo, S. P., Tamargo, M. C. (2001) Photoluminescence of δ-doped ZnSe:(Te,N) grown by molecular beam epitaxy. Journal of Applied Physics, 90 (5). 2269-2272 doi:10.1063/1.1389483
Hu, B., Karczewski, G., Luo, H., Samarth, N., Furdyna, J. K. (1993) Deep hole traps inp‐type nitrogen‐doped ZnSe grown by molecular beam epitaxy. Applied Physics Letters, 63 (3). 358-360 doi:10.1063/1.110042
 
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