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Mitsuyu, T., Ohkawa, K., Yamazaki, O. (1986) Photoluminescence properties of nitrogen‐doped ZnSe layers grown by molecular beam epitaxy with low‐energy ion doping. Applied Physics Letters, 49 (20). 1348-1350 doi:10.1063/1.97374

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Reference TypeJournal (article/letter/editorial)
TitlePhotoluminescence properties of nitrogen‐doped ZnSe layers grown by molecular beam epitaxy with low‐energy ion doping
JournalApplied Physics Letters
AuthorsMitsuyu, T.Author
Ohkawa, K.Author
Yamazaki, O.Author
Year1986 (November 17)Volume49
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.97374Search in ResearchGate
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Mindat Ref. ID8478857Long-form Identifiermindat:1:5:8478857:3
GUID0
Full ReferenceMitsuyu, T., Ohkawa, K., Yamazaki, O. (1986) Photoluminescence properties of nitrogen‐doped ZnSe layers grown by molecular beam epitaxy with low‐energy ion doping. Applied Physics Letters, 49 (20). 1348-1350 doi:10.1063/1.97374
Plain TextMitsuyu, T., Ohkawa, K., Yamazaki, O. (1986) Photoluminescence properties of nitrogen‐doped ZnSe layers grown by molecular beam epitaxy with low‐energy ion doping. Applied Physics Letters, 49 (20). 1348-1350 doi:10.1063/1.97374
In(1986, November) Applied Physics Letters Vol. 49 (20) AIP Publishing

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Ohkawa, K., Mitsuyu, T., Yamazaki, O. (1987) Characteristics of Cl‐doped ZnSe layers grown by molecular‐beam epitaxy. Journal of Applied Physics, 62 (8). 3216-3221 doi:10.1063/1.339323
Ohkawa, K., Mitsuyu, T. (1992) Photoluminescence properties of nitrogen-doped ZnSe layers grown by molecular beam epitaxy with ion- and radical-beam doping techniques. Journal of Luminescence, 52 (1) 9-15 doi:10.1016/0022-2313(92)90230-7
Ohkawa, K., Mitsuyu, T. (1991) p‐type ZnSe homoepitaxial layers grown by molecular beam epitaxy with nitrogen radical doping. Journal of Applied Physics, 70 (1). 439-442 doi:10.1063/1.350271
Ohkawa, K., Mitsuyu, T., Yamazaki, O. (1988) Molecular beam epitaxial growth of nitrogen-doped ZnSe with ion doping technique. Journal of Crystal Growth, 86 (1). 329-334 doi:10.1016/0022-0248(90)90738-7
Ohkawa, Kazuhiro, Karasawa, Takeshi, Mitsuyu, Tsuneo (1991) Characteristics of p-type ZnSe Layers Grown by Molecular Beam Epitaxy with Radical Doping. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l152
Zhu, Ziqiang, Takebayashi, Kazuhisa, Tanaka, Kiyotake, Ebisutani, Takashi, Kawamata, Junji, Yao, Takafumi (1994) Photoluminescence properties of nitrogen‐doped ZnSe grown by molecular‐beam epitaxy. Applied Physics Letters, 64 (1). 91-93 doi:10.1063/1.110878
Park, R. M., Mar, H. A., Salansky, N. M. (1985) Photoluminescence properties of nitrogen‐doped ZnSe grown by molecular beam epitaxy. Journal of Applied Physics, 58 (2). 1047-1049 doi:10.1063/1.336212
Karasawa, Takeshi, Ohkawa, Kazuhiro, Mitsuyu, Tsuneo (1993) Photopumped Blue Laser Action in ZnSe-ZnMnSSe Double Heterostructure Grown by Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 32. doi:10.1143/jjap.32.l1657
Saiki, T., Takeuchi, K., Kuwata-Gonokami, M., Mitsuyu, T., Ohkawa, K. (1992) Giant excitonic optical nonlinearity in ZnSe grown by molecular beam epitaxy. Journal of Crystal Growth, 117 (1). 802-805 doi:10.1016/0022-0248(92)90860-l
Karasawa, Takeshi, Ohkawa, Kazuhiro, Mitsuyu, Tsuneo (1989) Electron and x‐ray diffraction study of ZnTe‐ZnS strained‐layer superlattices grown by molecular beam epitaxy. Applied Physics Letters, 54 (2). 117-119 doi:10.1063/1.101224
Ohkawa, K., Mitsuyu, T., Yamazaki, O. (1988) Effect of biaxial strain on exciton luminescence of heteroepitaxial ZnSe layers. Physical Review B, 38 (17) 12465-12469 doi:10.1103/physrevb.38.12465
 
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