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Kaliski, R. W., Nam, D. W., Deppe, D. G., Holonyak, N., Hsieh, K. C., Burnham, R. D. (1987) Thermal annealing and photoluminescence measurements on AlxGa1−xAs‐GaAs quantum‐well heterostructures with Se and Mg sheet doping. Journal of Applied Physics, 62 (3). 998-1005 doi:10.1063/1.339661

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Reference TypeJournal (article/letter/editorial)
TitleThermal annealing and photoluminescence measurements on AlxGa1−xAs‐GaAs quantum‐well heterostructures with Se and Mg sheet doping
JournalJournal of Applied Physics
AuthorsKaliski, R. W.Author
Nam, D. W.Author
Deppe, D. G.Author
Holonyak, N.Author
Hsieh, K. C.Author
Burnham, R. D.Author
Year1987 (August)Volume62
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.339661Search in ResearchGate
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Mindat Ref. ID5032020Long-form Identifiermindat:1:5:5032020:4
GUID0
Full ReferenceKaliski, R. W., Nam, D. W., Deppe, D. G., Holonyak, N., Hsieh, K. C., Burnham, R. D. (1987) Thermal annealing and photoluminescence measurements on AlxGa1−xAs‐GaAs quantum‐well heterostructures with Se and Mg sheet doping. Journal of Applied Physics, 62 (3). 998-1005 doi:10.1063/1.339661
Plain TextKaliski, R. W., Nam, D. W., Deppe, D. G., Holonyak, N., Hsieh, K. C., Burnham, R. D. (1987) Thermal annealing and photoluminescence measurements on AlxGa1−xAs‐GaAs quantum‐well heterostructures with Se and Mg sheet doping. Journal of Applied Physics, 62 (3). 998-1005 doi:10.1063/1.339661
In(1987, August) Journal of Applied Physics Vol. 62 (3) AIP Publishing

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Kaliski, R. W., Holonyak, N., Hsieh, K. C., Nam, D. W., Burnham, R. D., Epler, J. E., Thornton, R. L., Paoli, T. L. (1986) Photopumped laser operation of AlxGa1−xAs‐GaAs quantum well heterostructures with Se and Mg sheet doping. Applied Physics Letters, 49 (20). 1390-1392 doi:10.1063/1.97333
Burnham, R. D., Holonyak, N., Hsieh, K. C., Kaliski, R. W., Nam, D. W., Thornton, R. L., Paoli, T. L. (1986) Quantum well AlxGa1−xAs‐GaAs lasers with internal (Si2)x(GaAs)1−xbarriers. Applied Physics Letters, 48 (12). 800-802 doi:10.1063/1.96674
Nam, D. W., Holonyak, N., Hsieh, K. C., Kaliski, R. W., Lee, J. W., Shichijo, H., Epler, J. E., Burnham, R. D., Paoli, T. L. (1987) Stable continuous room‐temperature laser operation of AlxGa1−xAs‐GaAs quantum well heterostructures grown on Si. Applied Physics Letters, 51 (1). 39-41 doi:10.1063/1.98879
Kaliski, R. W., Holonyak, N., Hsieh, K. C., Nam, D. W., Lee, J. W., Shichijo, H., Burnham, R. D., Epler, J. E., Chung, H. F. (1987) Continuous (300 K) photopumped laser operation of AlxGa1−xAs‐GaAs quantum well heterostructures grown on strained‐layer GaAs on Si. Applied Physics Letters, 50 (13). 836-838 doi:10.1063/1.98006
Dallesasse, J. M., Gavrilovic, P., Holonyak, N., Kaliski, R. W., Nam, D. W., Vesely, E. J., Burnham, R. D. (1990) Stability of AlAs in AlxGa1−xAs‐AlAs‐GaAs quantum well heterostructures. Applied Physics Letters, 56 (24). 2436-2438 doi:10.1063/1.102902
Deppe, D. G., Hsieh, K. C., Holonyak, N., Burnham, R. D., Thornton, R. L. (1985) Low‐threshold disorder‐defined buried‐heterostructure AlxGa1−xAs‐GaAs quantum well lasers. Journal of Applied Physics, 58 (12). 4515-4520 doi:10.1063/1.336265
Guido, L. J., Holonyak, N., Hsieh, K. C., Kaliski, R. W., Plano, W. E., Burnham, R. D., Thornton, R. L., Epler, J. E., Paoli, T. L. (1987) Effects of dielectric encapsulation and As overpressure on Al‐Ga interdiffusion in AlxGa1−xAs‐GaAs quantum‐well heterostructures. Journal of Applied Physics, 61 (4). 1372-1379 doi:10.1063/1.338116
Guido, L. J., Hsieh, K. C., Holonyak, N., Kaliski, R. W., Eu, V., Feng, M., Burnham, R. D. (1987) Impurity induced layer disordering of Si implanted AlxGa1−xAs‐GaAs quantum‐well heterostructures: Layer disordering via diffusion from extrinsic dislocation loops. Journal of Applied Physics, 61 (4). 1329-1334 doi:10.1063/1.338111
Meehan, K., Hsieh, K. C., Costrini, G., Kaliski, R. W., Holonyak, N., Coleman, J. J. (1986) Stacking and layer disordering of AlxGa1−xAs‐GaAs quantum well heterostructures. Applied Physics Letters, 48 (13). 861-863 doi:10.1063/1.96692
Dallesasse, J. M., El‐Zein, N., Holonyak, N., Hsieh, K. C., Burnham, R. D., Dupuis, R. D. (1990) Environmental degradation of AlxGa1−xAs‐GaAs quantum‐well heterostructures. Journal of Applied Physics, 68 (5). 2235-2238 doi:10.1063/1.346527
Jackson, G. S., Deppe, D. G., Hsieh, K. C., Holonyak, N., Hall, D. C., Burnham, R. D., Thornton, R. L., Paoli, T. L. (1986) Reduced temperature sensitivity AlxGa1−xAs‐GaAs quantum well lasers with (Si2)x(GaAs)1−x‘‘barriers’’. Applied Physics Letters, 48 (17). 1156-1158 doi:10.1063/1.96455
 
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