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Kaliski, R. W., Holonyak, N., Hsieh, K. C., Nam, D. W., Burnham, R. D., Epler, J. E., Thornton, R. L., Paoli, T. L. (1986) Photopumped laser operation of AlxGa1−xAs‐GaAs quantum well heterostructures with Se and Mg sheet doping. Applied Physics Letters, 49 (20). 1390-1392 doi:10.1063/1.97333

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Reference TypeJournal (article/letter/editorial)
TitlePhotopumped laser operation of AlxGa1−xAs‐GaAs quantum well heterostructures with Se and Mg sheet doping
JournalApplied Physics Letters
AuthorsKaliski, R. W.Author
Holonyak, N.Author
Hsieh, K. C.Author
Nam, D. W.Author
Burnham, R. D.Author
Epler, J. E.Author
Thornton, R. L.Author
Paoli, T. L.Author
Year1986 (November 17)Volume49
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.97333Search in ResearchGate
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Mindat Ref. ID8478833Long-form Identifiermindat:1:5:8478833:3
GUID0
Full ReferenceKaliski, R. W., Holonyak, N., Hsieh, K. C., Nam, D. W., Burnham, R. D., Epler, J. E., Thornton, R. L., Paoli, T. L. (1986) Photopumped laser operation of AlxGa1−xAs‐GaAs quantum well heterostructures with Se and Mg sheet doping. Applied Physics Letters, 49 (20). 1390-1392 doi:10.1063/1.97333
Plain TextKaliski, R. W., Holonyak, N., Hsieh, K. C., Nam, D. W., Burnham, R. D., Epler, J. E., Thornton, R. L., Paoli, T. L. (1986) Photopumped laser operation of AlxGa1−xAs‐GaAs quantum well heterostructures with Se and Mg sheet doping. Applied Physics Letters, 49 (20). 1390-1392 doi:10.1063/1.97333
In(1986, November) Applied Physics Letters Vol. 49 (20) AIP Publishing

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Nam, D. W., Holonyak, N., Hsieh, K. C., Kaliski, R. W., Lee, J. W., Shichijo, H., Epler, J. E., Burnham, R. D., Paoli, T. L. (1987) Stable continuous room‐temperature laser operation of AlxGa1−xAs‐GaAs quantum well heterostructures grown on Si. Applied Physics Letters, 51 (1). 39-41 doi:10.1063/1.98879
Burnham, R. D., Holonyak, N., Hsieh, K. C., Kaliski, R. W., Nam, D. W., Thornton, R. L., Paoli, T. L. (1986) Quantum well AlxGa1−xAs‐GaAs lasers with internal (Si2)x(GaAs)1−xbarriers. Applied Physics Letters, 48 (12). 800-802 doi:10.1063/1.96674
Kaliski, R. W., Holonyak, N., Hsieh, K. C., Nam, D. W., Lee, J. W., Shichijo, H., Burnham, R. D., Epler, J. E., Chung, H. F. (1987) Continuous (300 K) photopumped laser operation of AlxGa1−xAs‐GaAs quantum well heterostructures grown on strained‐layer GaAs on Si. Applied Physics Letters, 50 (13). 836-838 doi:10.1063/1.98006
Kaliski, R. W., Nam, D. W., Deppe, D. G., Holonyak, N., Hsieh, K. C., Burnham, R. D. (1987) Thermal annealing and photoluminescence measurements on AlxGa1−xAs‐GaAs quantum‐well heterostructures with Se and Mg sheet doping. Journal of Applied Physics, 62 (3). 998-1005 doi:10.1063/1.339661
Guido, L. J., Holonyak, N., Hsieh, K. C., Kaliski, R. W., Plano, W. E., Burnham, R. D., Thornton, R. L., Epler, J. E., Paoli, T. L. (1987) Effects of dielectric encapsulation and As overpressure on Al‐Ga interdiffusion in AlxGa1−xAs‐GaAs quantum‐well heterostructures. Journal of Applied Physics, 61 (4). 1372-1379 doi:10.1063/1.338116
Deppe, D. G., Jackson, G. S., Holonyak, N., Hall, D. C., Burnham, R. D., Thornton, R. L., Epler, J. E., Paoli, T. L. (1986) Single‐mode single‐lobe operation of broad area AlxGa1−xAs‐GaAs quantum well lasers. Applied Physics Letters, 49 (14). 883-885 doi:10.1063/1.97524
Deppe, D. G., Guido, L. J., Holonyak, N., Hsieh, K. C., Burnham, R. D., Thornton, R. L., Paoli, T. L. (1986) Stripe‐geometry quantum well heterostructure AlxGa1−xAs‐GaAs lasers defined by defect diffusion. Applied Physics Letters, 49 (9). 510-512 doi:10.1063/1.97133
Gavrilovic, P., Meehan, K., Epler, J. E., Holonyak, N., Burnham, R. D., Thornton, R. L., Streifer, W. (1985) Impurity‐disordered, coupled‐stripe AlxGa1−xAs‐GaAs quantum well laser. Applied Physics Letters, 46 (9). 857-859 doi:10.1063/1.95864
Nam, D. W., Holonyak, N., Vesely, E. J., Dupuis, R. D. (1990) Two‐phonon laser operation (4.2–77 K) of photopumped AlxGa1−xAs‐GaAs quantum well heterostructures. Applied Physics Letters, 57 (1). 46-48 doi:10.1063/1.103573
Deppe, D. G., Jackson, G. S., Holonyak, N., Hall, D. C., Burnham, R. D., Thornton, R. L., Epler, J. E., Paoli, T. L. (1987) Impurity‐induced layer‐disordered buried heterostructure AlxGa1−xAs‐GaAs quantum well edge‐injection laser array. Applied Physics Letters, 50 (7). 392-394 doi:10.1063/1.98209
Dallesasse, J. M., Gavrilovic, P., Holonyak, N., Kaliski, R. W., Nam, D. W., Vesely, E. J., Burnham, R. D. (1990) Stability of AlAs in AlxGa1−xAs‐AlAs‐GaAs quantum well heterostructures. Applied Physics Letters, 56 (24). 2436-2438 doi:10.1063/1.102902
 
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