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Gal, M., Tavendale, A., Johnson, M. J., Usher, B. F. (1989) Passivation of interface defects in lattice‐mismatched InGaAs/GaAs heterostructures with hydrogen. Journal of Applied Physics, 66 (2). 968-970 doi:10.1063/1.343475

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Reference TypeJournal (article/letter/editorial)
TitlePassivation of interface defects in lattice‐mismatched InGaAs/GaAs heterostructures with hydrogen
JournalJournal of Applied Physics
AuthorsGal, M.Author
Tavendale, A.Author
Johnson, M. J.Author
Usher, B. F.Author
Year1989 (July 15)Volume66
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.343475Search in ResearchGate
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Mindat Ref. ID5041755Long-form Identifiermindat:1:5:5041755:5
GUID0
Full ReferenceGal, M., Tavendale, A., Johnson, M. J., Usher, B. F. (1989) Passivation of interface defects in lattice‐mismatched InGaAs/GaAs heterostructures with hydrogen. Journal of Applied Physics, 66 (2). 968-970 doi:10.1063/1.343475
Plain TextGal, M., Tavendale, A., Johnson, M. J., Usher, B. F. (1989) Passivation of interface defects in lattice‐mismatched InGaAs/GaAs heterostructures with hydrogen. Journal of Applied Physics, 66 (2). 968-970 doi:10.1063/1.343475
In(1989, July) Journal of Applied Physics Vol. 66 (2) AIP Publishing

See Also

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Gal, M., Taylor, P. C., Usher, B. F., Orders, P. J. (1987) Photoluminescence in strained InGaAs‐GaAs heterostructures. Journal of Applied Physics, 62 (9). 3898-3901 doi:10.1063/1.339236
Joyce, M. J., Gal, M., Tann, J. (1989) Observation of interface defects in strained InGaAs‐GaAs by photoluminescence spectroscopy. Journal of Applied Physics, 65 (3). 1377-1379 doi:10.1063/1.342985
Gal, M., Orders, P. J., Usher, B. F., Joyce, M. J., Tann, J. (1988) Observation of compressive and tensile strains in InGaAs/GaAs by photoluminescence spectroscopy. Applied Physics Letters, 53 (2). 113-115 doi:10.1063/1.100385
Harmand, J. C., Matsuno, T., Inoue, K. (1989) InGaAs/InAlAs(Si) modulation‐doped heterostructures intentionally lattice mismatched to InP substrates. Journal of Applied Physics, 66 (6). 2633-2636 doi:10.1063/1.344230
Lord, S. M., Roos, G., Harris, J. S., Johnson, N. M. (1993) Hydrogen passivation of nonradiative defects in InGaAs/AlxGa1−xAs quantum wells. Journal of Applied Physics, 73 (2). 740-748 doi:10.1063/1.353331
Pearton, S. J., Tavendale, A. J. (1983) Hydrogen passivation of laser‐induced defects in germanium. Journal of Applied Physics, 54 (1). 440-441 doi:10.1063/1.331678
Russell-Harriott, J. J., Zou, J., Moon, A. R., Cockayne, D. J. H., Usher, B. F. (1998) Investigation of oval defects in InGaAs/GaAs strained-layer heterostructures using cathodoluminescence and wavelength dispersive spectroscopy. Applied Physics Letters, 73 (26). 3899-3901 doi:10.1063/1.122929
Du, A. Y., Li, M. F., Chong, T. C., Teo, K. L., Lau, W. S., Zhang, Z. (1996) Dislocations and related traps in p‐InGaAs/GaAs lattice‐mismatched heterostructures. Applied Physics Letters, 69 (19). 2849-2851 doi:10.1063/1.117339
Harmand, Jean Christophe, Matsuno, Toshinobu, Inoue, Kaoru (1989) Lattice-Mismatched Growth and Transport Properties of InAlAs/InGaAs Heterostructures on GaAs Substrates. Japanese Journal of Applied Physics, 28. doi:10.1143/jjap.28.l1101
Tavendale, A. J., Pearton, S. J. (1983) Hydrogen passivation of a nickel‐related defect in germanium. Journal of Applied Physics, 54 (2). 1156-1158 doi:10.1063/1.332090
Zou, J., Cockayne, D. J. H., Usher, B. F. (1993) Misfit dislocations and critical thickness in InGaAs/GaAs heterostructure systems. Journal of Applied Physics, 73 (2). 619-626 doi:10.1063/1.353372
 
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