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Gal, M., Orders, P. J., Usher, B. F., Joyce, M. J., Tann, J. (1988) Observation of compressive and tensile strains in InGaAs/GaAs by photoluminescence spectroscopy. Applied Physics Letters, 53 (2). 113-115 doi:10.1063/1.100385

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Reference TypeJournal (article/letter/editorial)
TitleObservation of compressive and tensile strains in InGaAs/GaAs by photoluminescence spectroscopy
JournalApplied Physics Letters
AuthorsGal, M.Author
Orders, P. J.Author
Usher, B. F.Author
Joyce, M. J.Author
Tann, J.Author
Year1988 (July 11)Volume53
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.100385Search in ResearchGate
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Mindat Ref. ID8484756Long-form Identifiermindat:1:5:8484756:6
GUID0
Full ReferenceGal, M., Orders, P. J., Usher, B. F., Joyce, M. J., Tann, J. (1988) Observation of compressive and tensile strains in InGaAs/GaAs by photoluminescence spectroscopy. Applied Physics Letters, 53 (2). 113-115 doi:10.1063/1.100385
Plain TextGal, M., Orders, P. J., Usher, B. F., Joyce, M. J., Tann, J. (1988) Observation of compressive and tensile strains in InGaAs/GaAs by photoluminescence spectroscopy. Applied Physics Letters, 53 (2). 113-115 doi:10.1063/1.100385
In(1988, July) Applied Physics Letters Vol. 53 (2) AIP Publishing

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Joyce, M. J., Gal, M., Tann, J. (1989) Observation of interface defects in strained InGaAs‐GaAs by photoluminescence spectroscopy. Journal of Applied Physics, 65 (3). 1377-1379 doi:10.1063/1.342985
Gal, M., Taylor, P. C., Usher, B. F., Orders, P. J. (1987) Photoluminescence in strained InGaAs‐GaAs heterostructures. Journal of Applied Physics, 62 (9). 3898-3901 doi:10.1063/1.339236
Gal, M., Tavendale, A., Johnson, M. J., Usher, B. F. (1989) Passivation of interface defects in lattice‐mismatched InGaAs/GaAs heterostructures with hydrogen. Journal of Applied Physics, 66 (2). 968-970 doi:10.1063/1.343475
Orders, P. J., Usher, B. F. (1987) Determination of critical layer thickness in InxGa1−xAs/GaAs heterostructures by x‐ray diffraction. Applied Physics Letters, 50 (15). 980-982 doi:10.1063/1.98004
Joyce, M. J., Johnson, M. J., Gal, M., Usher, B. F. (1988) Concentration-dependent band offset inInxGa1−xAsGaAsstrained quantum wells. Physical Review B, 38 (15) 10978-10980 doi:10.1103/physrevb.38.10978
Russell-Harriott, J. J., Zou, J., Moon, A. R., Cockayne, D. J. H., Usher, B. F. (1998) Investigation of oval defects in InGaAs/GaAs strained-layer heterostructures using cathodoluminescence and wavelength dispersive spectroscopy. Applied Physics Letters, 73 (26). 3899-3901 doi:10.1063/1.122929
Lambkin, J. D., Dunstan, D. J., Homewood, K. P., Howard, L. K., Emeny, M. T. (1990) Thermal quenching of the photoluminescence of InGaAs/GaAs and InGaAs/AlGaAs strained‐layer quantum wells. Applied Physics Letters, 57 (19). 1986-1988 doi:10.1063/1.103987
Zou, J., Cockayne, D. J. H., Usher, B. F. (1993) Misfit dislocations and critical thickness in InGaAs/GaAs heterostructure systems. Journal of Applied Physics, 73 (2). 619-626 doi:10.1063/1.353372
Syperek, M., Leszczyński, P., Misiewicz, J., Pavelescu, E. M., Gilfert, C., Reithmaier, J. P. (2010) Time-resolved photoluminescence spectroscopy of an InGaAs/GaAs quantum well-quantum dots tunnel injection structure. Applied Physics Letters, 96 (1). 11901pp. doi:10.1063/1.3280384
Gal, M., Shi, R., Tann, J. (1989) On the nature of photoreflectance line shape in GaAs. Journal of Applied Physics, 66 (12). 6196-6198 doi:10.1063/1.343561
Tann, J., Gal, M., Meaney, K., Taylor, P. C. (1990) Optical bistability in hydrogenated amorphous silicon. Applied Physics Letters, 56 (11). 1017-1018 doi:10.1063/1.103183
 
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