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Gal, M., Shi, R., Tann, J. (1989) On the nature of photoreflectance line shape in GaAs. Journal of Applied Physics, 66 (12). 6196-6198 doi:10.1063/1.343561

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Reference TypeJournal (article/letter/editorial)
TitleOn the nature of photoreflectance line shape in GaAs
JournalJournal of Applied Physics
AuthorsGal, M.Author
Shi, R.Author
Tann, J.Author
Year1989 (December 15)Volume66
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.343561Search in ResearchGate
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Mindat Ref. ID5041569Long-form Identifiermindat:1:5:5041569:0
GUID0
Full ReferenceGal, M., Shi, R., Tann, J. (1989) On the nature of photoreflectance line shape in GaAs. Journal of Applied Physics, 66 (12). 6196-6198 doi:10.1063/1.343561
Plain TextGal, M., Shi, R., Tann, J. (1989) On the nature of photoreflectance line shape in GaAs. Journal of Applied Physics, 66 (12). 6196-6198 doi:10.1063/1.343561
In(1989, December) Journal of Applied Physics Vol. 66 (12) AIP Publishing

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Joyce, M. J., Gal, M., Tann, J. (1989) Observation of interface defects in strained InGaAs‐GaAs by photoluminescence spectroscopy. Journal of Applied Physics, 65 (3). 1377-1379 doi:10.1063/1.342985
Gal, M., Orders, P. J., Usher, B. F., Joyce, M. J., Tann, J. (1988) Observation of compressive and tensile strains in InGaAs/GaAs by photoluminescence spectroscopy. Applied Physics Letters, 53 (2). 113-115 doi:10.1063/1.100385
Seebauer, E. G. (1989) Oxidation and annealing of GaAs (100) studied by photoreflectance. Journal of Applied Physics, 66 (10). 4963-4972 doi:10.1063/1.343769
Sydor, Michael, Angelo, James, Mitchel, William, Haas, T. W., Yen, Ming‐Yuan (1989) Erratum: ‘‘Photoreflectance measurements of unintentional impurity concentrations in undoped GaAs’’ [J. Appl. Phys. 66, 156 (1989)]. Journal of Applied Physics, 66 (10). 5119 doi:10.1063/1.344494
Gal, M., Tavendale, A., Johnson, M. J., Usher, B. F. (1989) Passivation of interface defects in lattice‐mismatched InGaAs/GaAs heterostructures with hydrogen. Journal of Applied Physics, 66 (2). 968-970 doi:10.1063/1.343475
Tann, J., Gal, M. (1995) Mapping of subsurface inhomogeneities in semiconductors using differential reflectance microscopy. Applied Physics Letters, 67 (1). 118-120 doi:10.1063/1.115502
Newbury, P. R., Shahzad, K., Petruzzello, J., Cammack, D. A. (1989) Exciton line broadening in ZnSxSe1−xepilayers grown on GaAs by molecular‐beam epitaxy. Journal of Applied Physics, 66 (10). 4950-4957 doi:10.1063/1.343767
Wirth, R., Seitz, H., Geiger, M., Porsche, J., Scholz, F., Hangleiter, A. (1998) Valence-band splitting and band-gap reduction in ordered GaInAs/InP. Journal of Applied Physics, 83 (11). 6196-6198 doi:10.1063/1.367493
Tann, J., Gal, M., Meaney, K., Taylor, P. C. (1990) Optical bistability in hydrogenated amorphous silicon. Applied Physics Letters, 56 (11). 1017-1018 doi:10.1063/1.103183
Sydor, Michael, Angelo, James, Mitchel, William, Haas, T. W., Yen, Ming‐Yuan (1989) Photoreflectance measurements of unintentional impurity concentrations in undoped GaAs. Journal of Applied Physics, 66 (1). 156-160 doi:10.1063/1.343896
Fujiwara, K., Kanamoto, K., Tsukada, N., Miyatake, H., Koyama, H. (1989) Photoluminescence line shape of excitons in GaAs single‐quantum wells with and without heterointerface ordering. Journal of Applied Physics, 66 (3). 1488-1491 doi:10.1063/1.344406
 
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