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Khokhlov, V. I., Sidorov, Yu. G., Dvoretskii, S. A. (1974) Electrophysical properties of non-doped epitaxial GaAs in the range from 10 to 1100°K. physica status solidi (a), 25 (1). 311-321 doi:10.1002/pssa.2210250130

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Reference TypeJournal (article/letter/editorial)
TitleElectrophysical properties of non-doped epitaxial GaAs in the range from 10 to 1100°K
Journalphysica status solidi (a)
AuthorsKhokhlov, V. I.Author
Sidorov, Yu. G.Author
Dvoretskii, S. A.Author
Year1974 (September 16)Volume25
Issue1
PublisherWiley
DOIdoi:10.1002/pssa.2210250130Search in ResearchGate
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Mindat Ref. ID5048966Long-form Identifiermindat:1:5:5048966:8
GUID0
Full ReferenceKhokhlov, V. I., Sidorov, Yu. G., Dvoretskii, S. A. (1974) Electrophysical properties of non-doped epitaxial GaAs in the range from 10 to 1100°K. physica status solidi (a), 25 (1). 311-321 doi:10.1002/pssa.2210250130
Plain TextKhokhlov, V. I., Sidorov, Yu. G., Dvoretskii, S. A. (1974) Electrophysical properties of non-doped epitaxial GaAs in the range from 10 to 1100°K. physica status solidi (a), 25 (1). 311-321 doi:10.1002/pssa.2210250130
In(1974, September) physica status solidi (a) Vol. 25 (1) Wiley

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Khokhlov, V. I., Dvoretskii, S. A., Sidorov, Yu. G. (1975) High-temperature hall effect in epitaxial doped gallium arsenide. physica status solidi (a), 30 (1). 53-58 doi:10.1002/pssa.2210300105
Khokhlov, V. I., Dvoretskii, S. A., Sidorov, Yu. G., Kravchenko, A. F. (1974) Electrophysical characteristics of accidental-doping defects in epitaxial n-type gallium arsenide. Soviet Physics Journal, 17. 1414-1418 doi:10.1007/bf00891297
Khokhlov, A. F., Panteleev, V. A., Dobrokhotov, E. V., Maksimov, G. A., Sidorov, V. A. (1984) Phosphorus Diffusion in Amorphous Silicon. physica status solidi (a), 81 (1). doi:10.1002/pssa.2210810151
Khokhlov, A. F., Mashin, A. I., Ebshov, A. V., Mobdvinova, Yu. A. (1986) The Properties of Amorphous Silicon Doped with the Isovalent Germanium Impurity. physica status solidi (a), 94 (1). 379-384 doi:10.1002/pssa.2210940148
Teplyugov, S. G., Sidorov, S. K., Dubinin, S. F., Nikulin, Yu. M. (1974) On antiferromagnetism of disordered NiMn alloys. physica status solidi (a), 21 (1). doi:10.1002/pssa.2210210152
Segsa, K. H., Spenke, S. (1975) EPR on manganese-doped GaAs epitaxial layers. physica status solidi (a), 27 (1). 129-134 doi:10.1002/pssa.2210270116
Rosin, H. (1974) On chemical etching of structural defects in epitaxial GaAs1-xPx and bulk GaAs. physica status solidi (a), 25 (1). doi:10.1002/pssa.2210250137
Sysoev, B. I., Bezryadin, N. N., Shlyk, Yu. K. (1986) Electrophysical properties of In2Te2-iias heterojunctions. physica status solidi (a), 95 (2). doi:10.1002/pssa.2210950262
Aleksandrov, L. N., Zaletin, V. M., Krivorotov, E. A., Sidorov, Yu. G. (1973) Investigation of the growth surface of GaAs epitaxial films by chemical decoration and small-angle shadowing technique. physica status solidi (a), 15 (1). 367-370 doi:10.1002/pssa.2210150141
Gladkov, P. S., Ozanyan, K. B. (1988) Photoconductivity in bulk and epitaxial GaAs: V. physica status solidi (a), 108 (2). doi:10.1002/pssa.2211080250
Tairov, Yu. M., Khlebnikov, I. I., Tsvetkov, V. F. (1974) Investigation of silicon carbide single crystals doped with scandium. physica status solidi (a), 25 (1). 349-357 doi:10.1002/pssa.2210250134
 
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