Reference Type | Journal (article/letter/editorial) |
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Title | Growth of InAlAs/InGaAs and InGaAlAs/InGaAs heterojunction bipolar transistors on Si‐implanted InP substrates by molecular beam epitaxy |
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Journal | Journal of Applied Physics |
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Authors | Dodabalapur, A. | Author |
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Chang, T. Y. | Author |
Tell, B. | Author |
Brown‐Goebeler, K. F. | Author |
Year | 1992 (March) | Volume | 71 |
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Issue | 5 |
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Publisher | AIP Publishing |
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DOI | doi:10.1063/1.351108Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 5057564 | Long-form Identifier | mindat:1:5:5057564:6 |
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GUID | 0 |
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Full Reference | Dodabalapur, A., Chang, T. Y., Tell, B., Brown‐Goebeler, K. F. (1992) Growth of InAlAs/InGaAs and InGaAlAs/InGaAs heterojunction bipolar transistors on Si‐implanted InP substrates by molecular beam epitaxy. Journal of Applied Physics, 71 (5). 2449-2451 doi:10.1063/1.351108 |
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Plain Text | Dodabalapur, A., Chang, T. Y., Tell, B., Brown‐Goebeler, K. F. (1992) Growth of InAlAs/InGaAs and InGaAlAs/InGaAs heterojunction bipolar transistors on Si‐implanted InP substrates by molecular beam epitaxy. Journal of Applied Physics, 71 (5). 2449-2451 doi:10.1063/1.351108 |
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In | (1992, March) Journal of Applied Physics Vol. 71 (5) AIP Publishing |
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