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Tell, B., Johnson, B. C., Zyskind, J. L., Brown, J. M., Sulhoff, J. W., Brown‐Goebeler, K. F., Miller, B. I., Koren, U. (1988) Disordering of InGaAs‐InP quantum wells by Si implantation. Applied Physics Letters, 52 (17). 1428-1430 doi:10.1063/1.99136

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Reference TypeJournal (article/letter/editorial)
TitleDisordering of InGaAs‐InP quantum wells by Si implantation
JournalApplied Physics Letters
AuthorsTell, B.Author
Johnson, B. C.Author
Zyskind, J. L.Author
Brown, J. M.Author
Sulhoff, J. W.Author
Brown‐Goebeler, K. F.Author
Miller, B. I.Author
Koren, U.Author
Year1988 (April 25)Volume52
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.99136Search in ResearchGate
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Mindat Ref. ID8482870Long-form Identifiermindat:1:5:8482870:1
GUID0
Full ReferenceTell, B., Johnson, B. C., Zyskind, J. L., Brown, J. M., Sulhoff, J. W., Brown‐Goebeler, K. F., Miller, B. I., Koren, U. (1988) Disordering of InGaAs‐InP quantum wells by Si implantation. Applied Physics Letters, 52 (17). 1428-1430 doi:10.1063/1.99136
Plain TextTell, B., Johnson, B. C., Zyskind, J. L., Brown, J. M., Sulhoff, J. W., Brown‐Goebeler, K. F., Miller, B. I., Koren, U. (1988) Disordering of InGaAs‐InP quantum wells by Si implantation. Applied Physics Letters, 52 (17). 1428-1430 doi:10.1063/1.99136
In(1988, April) Applied Physics Letters Vol. 52 (17) AIP Publishing


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