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Banerjee, S., Srivastava, A. K., Arora, B. M., Sulhoff, J. W., Zyskind, J. L. (1988) Photoluminescence measurements on open‐tube heat‐treated and Cd‐diffused InP. Applied Physics Letters, 53 (15). 1429-1430 doi:10.1063/1.99963

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Reference TypeJournal (article/letter/editorial)
TitlePhotoluminescence measurements on open‐tube heat‐treated and Cd‐diffused InP
JournalApplied Physics Letters
AuthorsBanerjee, S.Author
Srivastava, A. K.Author
Arora, B. M.Author
Sulhoff, J. W.Author
Zyskind, J. L.Author
Year1988 (October 10)Volume53
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.99963Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8484401Long-form Identifiermindat:1:5:8484401:9
GUID0
Full ReferenceBanerjee, S., Srivastava, A. K., Arora, B. M., Sulhoff, J. W., Zyskind, J. L. (1988) Photoluminescence measurements on open‐tube heat‐treated and Cd‐diffused InP. Applied Physics Letters, 53 (15). 1429-1430 doi:10.1063/1.99963
Plain TextBanerjee, S., Srivastava, A. K., Arora, B. M., Sulhoff, J. W., Zyskind, J. L. (1988) Photoluminescence measurements on open‐tube heat‐treated and Cd‐diffused InP. Applied Physics Letters, 53 (15). 1429-1430 doi:10.1063/1.99963
In(1988, October) Applied Physics Letters Vol. 53 (15) AIP Publishing

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Tell, B., Johnson, B. C., Zyskind, J. L., Brown, J. M., Sulhoff, J. W., Brown‐Goebeler, K. F., Miller, B. I., Koren, U. (1988) Disordering of InGaAs‐InP quantum wells by Si implantation. Applied Physics Letters, 52 (17). 1428-1430 doi:10.1063/1.99136
Banerjee, S., Srivastava, A. K., Arora, B. M. (1990) Thermal degradation of InP in open tube processing: deep‐level photoluminescence. Journal of Applied Physics, 68 (5). 2324-2330 doi:10.1063/1.346539
Caneau, C., Srivastava, A. K., Zyskind, J. L., Sulhoff, J. W., Dentai, A. G., Pollack, M. A. (1986) cw operation of GaInAsSb/AlGaAsSb lasers up to 190 K. Applied Physics Letters, 49 (2). 55-57 doi:10.1063/1.97350
Zyskind, J. L., Srivastava, A. K., DeWinter, J. C., Pollack, M. A., Sulhoff, J. W. (1987) Liquid‐phase‐epitaxial InAsySb1−yon GaSb substrates using GaInAsSb buffer layers: Growth, characterization, and application to mid‐IR photodiodes. Journal of Applied Physics, 61 (8). 2898-2903 doi:10.1063/1.337834
Kumar, A. Shailendra, Narasimhan, K. L., Rajalakshmi, R., Chandvankar, S. S., Arora, B. M. (1989) Photothermal deflection spectroscopy of heat‐treated GaAs, InP, and InGaAsP alloys. Applied Physics Letters, 55 (24). 2512-2513 doi:10.1063/1.102014
Sulhoff, J. W., Zyskind, J. L., Burrus, C. A., Feldman, R. D., Austin, R. F. (1990) HgCdTe all‐epitaxial semiconductor/semimetal Schottky photodiode. Applied Physics Letters, 56 (4). 388-390 doi:10.1063/1.102794
Cherng, M. J., Stringfellow, G. B., Kisker, D. W., Srivastava, A. K., Zyskind, J. L. (1986) GaInAsSb metastable alloys grown by organometallic vapor phase epitaxy. Applied Physics Letters, 48 (6). 419-421 doi:10.1063/1.96517
Srivastava, A. K., Zyskind, J. L., Lum, R. M., Dutt, B. V., Klingert, J. K. (1986) Electrical characteristics of InAsSb/GaSb heterojunctions. Applied Physics Letters, 49 (1). 41-43 doi:10.1063/1.97077
Caneau, C., Zyskind, J. L., Sulhoff, J. W., Glover, T. E., Centanni, J., Burrus, C. A., Dentai, A. G., Pollack, M. A. (1987) 2.2 μm GaInAsSb/AlGaAsSb injection lasers with low threshold current density. Applied Physics Letters, 51 (10). 764-766 doi:10.1063/1.98860
Yi, M. B., Lu, L. T., Kapon, E., Rav‐Noy, Z., Margalit, S., Yariv, A. (1985) Cd diffused mesa‐substrate buried heterostructure InGaAsP/InP laser. Applied Physics Letters, 46 (4). 328-330 doi:10.1063/1.95620
Narasimhan, K. L., Banerjee, S., Srivastava, A. K., Sardesai, A. (1993) Anomalous temperature dependence of photoluminescence in porous silicon. Applied Physics Letters, 62 (4). 331-333 doi:10.1063/1.108949
 
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