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Srivastava, A. K., Zyskind, J. L., Lum, R. M., Dutt, B. V., Klingert, J. K. (1986) Electrical characteristics of InAsSb/GaSb heterojunctions. Applied Physics Letters, 49 (1). 41-43 doi:10.1063/1.97077

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Reference TypeJournal (article/letter/editorial)
TitleElectrical characteristics of InAsSb/GaSb heterojunctions
JournalApplied Physics Letters
AuthorsSrivastava, A. K.Author
Zyskind, J. L.Author
Lum, R. M.Author
Dutt, B. V.Author
Klingert, J. K.Author
Year1986 (July 7)Volume49
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.97077Search in ResearchGate
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Mindat Ref. ID8478210Long-form Identifiermindat:1:5:8478210:8
GUID0
Full ReferenceSrivastava, A. K., Zyskind, J. L., Lum, R. M., Dutt, B. V., Klingert, J. K. (1986) Electrical characteristics of InAsSb/GaSb heterojunctions. Applied Physics Letters, 49 (1). 41-43 doi:10.1063/1.97077
Plain TextSrivastava, A. K., Zyskind, J. L., Lum, R. M., Dutt, B. V., Klingert, J. K. (1986) Electrical characteristics of InAsSb/GaSb heterojunctions. Applied Physics Letters, 49 (1). 41-43 doi:10.1063/1.97077
In(1986, July) Applied Physics Letters Vol. 49 (1) AIP Publishing

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Srivastava, A. K., DeWinter, J. C., Caneau, C., Pollack, M. A., Zyskind, J. L. (1986) High performance GaInAsSb/GaSb p‐n photodiodes for the 1.8–2.3 μm wavelength range. Applied Physics Letters, 48 (14). 903-904 doi:10.1063/1.96653
Caneau, C., Srivastava, A. K., Zyskind, J. L., Sulhoff, J. W., Dentai, A. G., Pollack, M. A. (1986) cw operation of GaInAsSb/AlGaAsSb lasers up to 190 K. Applied Physics Letters, 49 (2). 55-57 doi:10.1063/1.97350
Lum, R. M., Klingert, J. K., Davidson, B. A., Lamont, M. G. (1987) Improvements in the heteroepitaxy of GaAs on Si. Applied Physics Letters, 51 (1). 36-38 doi:10.1063/1.98878
Cherng, M. J., Stringfellow, G. B., Kisker, D. W., Srivastava, A. K., Zyskind, J. L. (1986) GaInAsSb metastable alloys grown by organometallic vapor phase epitaxy. Applied Physics Letters, 48 (6). 419-421 doi:10.1063/1.96517
Chelluri, B., Chang, T. Y., Ourmazd, A., Dayem, A. H., Zyskind, J. L., Srivastava, A. (1986) Molecular beam epitaxial growth of the II‐V semiconductor compound Zn3As2. Applied Physics Letters, 49 (24). 1665-1667 doi:10.1063/1.97261
Lum, R. M., Klingert, J. K., Lamont, M. G. (1987) Use of tertiarybutylarsine in the metalorganic chemical vapor deposition growth of GaAs. Applied Physics Letters, 50 (5). 284-286 doi:10.1063/1.98226
Lum, R. M., Klingert, J. K., Stevie, F. A. (1990) Controlled doping of GaAs films grown with tertiarybutylarsine. Journal of Applied Physics, 67 (10). 6507-6512 doi:10.1063/1.345126
Lum, R. M., Klingert, J. K., Ren, F., Shah, N. J. (1990) Epitaxial growth ofn+‐nGaAs metal‐semiconductor field‐effect transistor structures using tertiarybutylarsine. Applied Physics Letters, 56 (4). 379-381 doi:10.1063/1.102791
Banerjee, S., Srivastava, A. K., Arora, B. M., Sulhoff, J. W., Zyskind, J. L. (1988) Photoluminescence measurements on open‐tube heat‐treated and Cd‐diffused InP. Applied Physics Letters, 53 (15). 1429-1430 doi:10.1063/1.99963
Zyskind, J. L., Srivastava, A. K., DeWinter, J. C., Pollack, M. A., Sulhoff, J. W. (1987) Liquid‐phase‐epitaxial InAsySb1−yon GaSb substrates using GaInAsSb buffer layers: Growth, characterization, and application to mid‐IR photodiodes. Journal of Applied Physics, 61 (8). 2898-2903 doi:10.1063/1.337834
Lum, R. M., Klingert, J. K., Wynn, A. S., Lamont, M. G. (1988) Investigation of triethylarsenic as a replacement for arsine in the metalorganic chemical vapor deposition of GaAs. Applied Physics Letters, 52 (18). 1475-1477 doi:10.1063/1.99103
 
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