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Lum, R. M., Klingert, J. K., Wynn, A. S., Lamont, M. G. (1988) Investigation of triethylarsenic as a replacement for arsine in the metalorganic chemical vapor deposition of GaAs. Applied Physics Letters, 52 (18). 1475-1477 doi:10.1063/1.99103

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Reference TypeJournal (article/letter/editorial)
TitleInvestigation of triethylarsenic as a replacement for arsine in the metalorganic chemical vapor deposition of GaAs
JournalApplied Physics Letters
AuthorsLum, R. M.Author
Klingert, J. K.Author
Wynn, A. S.Author
Lamont, M. G.Author
Year1988 (May 2)Volume52
Issue18
PublisherAIP Publishing
DOIdoi:10.1063/1.99103Search in ResearchGate
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Mindat Ref. ID8482911Long-form Identifiermindat:1:5:8482911:7
GUID0
Full ReferenceLum, R. M., Klingert, J. K., Wynn, A. S., Lamont, M. G. (1988) Investigation of triethylarsenic as a replacement for arsine in the metalorganic chemical vapor deposition of GaAs. Applied Physics Letters, 52 (18). 1475-1477 doi:10.1063/1.99103
Plain TextLum, R. M., Klingert, J. K., Wynn, A. S., Lamont, M. G. (1988) Investigation of triethylarsenic as a replacement for arsine in the metalorganic chemical vapor deposition of GaAs. Applied Physics Letters, 52 (18). 1475-1477 doi:10.1063/1.99103
In(1988, May) Applied Physics Letters Vol. 52 (18) AIP Publishing

See Also

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Lum, R. M., Klingert, J. K., Lamont, M. G. (1987) Use of tertiarybutylarsine in the metalorganic chemical vapor deposition growth of GaAs. Applied Physics Letters, 50 (5). 284-286 doi:10.1063/1.98226
Lum, R. M., Klingert, J. K., Davidson, B. A., Lamont, M. G. (1987) Improvements in the heteroepitaxy of GaAs on Si. Applied Physics Letters, 51 (1). 36-38 doi:10.1063/1.98878
Harris, T. D., Lamont, M. G., Sauer, R., Lum, R. M., Klingert, J. K. (1988) Near‐gap photoluminescence of GaAs grown directly on silicon. Journal of Applied Physics, 64 (10). 5110-5116 doi:10.1063/1.342418
Lum, R. M., Klingert, J. K. (1989) Thermochemistry of alkylarsine compounds used as arsenic precursors in metalorganic vapor phase epitaxy. Journal of Applied Physics, 66 (8). 3820-3823 doi:10.1063/1.344045
Speckman, D. M., Wendt, J. P. (1987) Alternatives to arsine: The atmospheric pressure organometallic chemical vapor deposition growth of GaAs using triethylarsenic. Applied Physics Letters, 50 (11). 676-678 doi:10.1063/1.98063
Lum, R. M., Klingert, J. K., Kisker, D. W. (1989) Effects of methylarsine homologs (CH3)nAsH3−non the metalorganic vapor‐phase epitaxy of GaAs. Journal of Applied Physics, 66 (2). 652-655 doi:10.1063/1.343532
Lum, R. M., Klingert, J. K., Bylsma, R. B., Glass, A. M., Macrander, A.T., Harris, T. D., Lamont, M. G. (1988) Effects of misfit dislocations and thermally induced strain on the film properties of heteroepitaxial GaAs on Si. Journal of Applied Physics, 64 (12). 6727-6732 doi:10.1063/1.342004
Watkins, S. P., Haacke, G. (1991) Carbon acceptor incorporation in GaAs grown by metalorganic chemical vapor deposition: Arsine versus tertiarybutylarsine. Applied Physics Letters, 59 (18). 2263-2265 doi:10.1063/1.106064
Huelsman, A. D., Zien, L., Reif, R. (1988) Plasma‐controlled deposition of GaAs and GaAsP by metalorganic chemical vapor deposition. Applied Physics Letters, 52 (9). 726-727 doi:10.1063/1.99360
Lum, R.M., Klingert, J.K., Lamont, M.G. (1988) Comparison of alternate As-sources to arsine in the MOCVD growth of GaAs. Journal of Crystal Growth, 89 (1). 137-142 doi:10.1016/0022-0248(88)90083-8
Nouhi, A., Radhakrishnan, G., Katz, J., Koliwad, K. (1988) Molecular beam epitaxy and metalorganic chemical vapor deposition growth of epitaxial CdTe on (100) GaAs/Si and (111) GaAs/Si substrates. Applied Physics Letters, 52 (24). 2028-2030 doi:10.1063/1.99571
 
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