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Nouhi, A., Radhakrishnan, G., Katz, J., Koliwad, K. (1988) Molecular beam epitaxy and metalorganic chemical vapor deposition growth of epitaxial CdTe on (100) GaAs/Si and (111) GaAs/Si substrates. Applied Physics Letters, 52 (24). 2028-2030 doi:10.1063/1.99571

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Reference TypeJournal (article/letter/editorial)
TitleMolecular beam epitaxy and metalorganic chemical vapor deposition growth of epitaxial CdTe on (100) GaAs/Si and (111) GaAs/Si substrates
JournalApplied Physics Letters
AuthorsNouhi, A.Author
Radhakrishnan, G.Author
Katz, J.Author
Koliwad, K.Author
Year1988 (June 13)Volume52
Issue24
PublisherAIP Publishing
DOIdoi:10.1063/1.99571Search in ResearchGate
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Mindat Ref. ID8483344Long-form Identifiermindat:1:5:8483344:8
GUID0
Full ReferenceNouhi, A., Radhakrishnan, G., Katz, J., Koliwad, K. (1988) Molecular beam epitaxy and metalorganic chemical vapor deposition growth of epitaxial CdTe on (100) GaAs/Si and (111) GaAs/Si substrates. Applied Physics Letters, 52 (24). 2028-2030 doi:10.1063/1.99571
Plain TextNouhi, A., Radhakrishnan, G., Katz, J., Koliwad, K. (1988) Molecular beam epitaxy and metalorganic chemical vapor deposition growth of epitaxial CdTe on (100) GaAs/Si and (111) GaAs/Si substrates. Applied Physics Letters, 52 (24). 2028-2030 doi:10.1063/1.99571
In(1988, June) Applied Physics Letters Vol. 52 (24) AIP Publishing

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Radhakrishnan, G., Liu, J., Grunthaner, F., Katz, J., Morkoç, H., Mazur, J. (1988) Growth of (111) GaAs on (111) Si using molecular‐beam epitaxy. Journal of Applied Physics, 64 (3). 1596-1598 doi:10.1063/1.341796
Kim, Jae‐Hoon, Nouhi, Akbar, Radhakrishnan, Gouri, Liu, John K., Lang, Robert J., Katz, Joseph (1988) High‐peak‐power low‐threshold AlGaAs/GaAs stripe laser diodes on Si substrates grown by migration‐enhanced molecular beam epitaxy. Applied Physics Letters, 53 (14). 1248-1250 doi:10.1063/1.99992
Kim, Jae‐Hoon, Liu, John K., Radhakrishnan, Gouri, Katz, Joseph, Sakai, Shiro, Chang, Shi S., El‐Masry, Nadia A. (1988) Growth and characterization of GaAs layers on Si substrates by migration‐enhanced molecular beam epitaxy. Applied Physics Letters, 53 (24). 2435-2437 doi:10.1063/1.100212
Radhakrishnan, G., McCullough, O., Cser, J., Katz, J. (1988) Secondary ion mass spectrometry study ofexsituannealing of epitaxial GaAs grown on Si substrates. Applied Physics Letters, 52 (9). 731-732 doi:10.1063/1.99362
Yasuda, Kazuhito, Niraula, Madan, Ishiguro, Tomoaki, Kawauchi, Yasuhiro, Morishita, Hiroshi, Agata, Yasunori (2002) Growth and Characterization of Thick (100) CdTe Layers on (100) GaAs and (100) GaAs/Si Substrates by Metalorganic Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 41. doi:10.1143/jjap.41.l1109
Kim, Jae-Hoon, Radhakrishnan, Gouri, Nouhi, Akbar, Liu, John K., Lang, Robert J., Katz, Joseph (1989) High-Power AlGaAs/GaAs DH Stripe Laser Diodes on GaAs-on-Si Prepared by Migration-Enhanced Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 28. 791-796 doi:10.1143/jjap.28.791
Soga, T., Jimbo, T., Arokiaraj, J., Umeno, M. (2000) Growth of stress-released GaAs on GaAs/Si structure by metalorganic chemical vapor deposition. Applied Physics Letters, 77 (24). 3947-3949 doi:10.1063/1.1333691
Nouhi, Akbar, Stirn, Richard J. (1987) Heteroepitaxial growth of Cd1−xMnxTe on GaAs by metalorganic chemical vapor deposition. Applied Physics Letters, 51 (26). 2251-2253 doi:10.1063/1.98927
Hoke, W. E., Lemonias, P. J., Traczewski, R. (1984) Metalorganic vapor deposition of CdTe and HgCdTe epitaxial films on InSb and GaAs substrates. Applied Physics Letters, 44 (11). 1046-1048 doi:10.1063/1.94637
Ebe, H., Nishijima, Y. (1995) (111)A CdTe rotation growth on (111) Si with low growth rate by metalorganic chemical vapor deposition. Applied Physics Letters, 67 (21). 3138-3140 doi:10.1063/1.114859
Hebner, G. A. (1990) Epitaxial growth of InSb on GaAs by metalorganic chemical vapor deposition {au}R. M. ,Biefeld and. Applied Physics Letters, 57 (15). 1563-1565 doi:10.1063/1.103354
 
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