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Kim, Jae‐Hoon, Nouhi, Akbar, Radhakrishnan, Gouri, Liu, John K., Lang, Robert J., Katz, Joseph (1988) High‐peak‐power low‐threshold AlGaAs/GaAs stripe laser diodes on Si substrates grown by migration‐enhanced molecular beam epitaxy. Applied Physics Letters, 53 (14). 1248-1250 doi:10.1063/1.99992

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Reference TypeJournal (article/letter/editorial)
TitleHigh‐peak‐power low‐threshold AlGaAs/GaAs stripe laser diodes on Si substrates grown by migration‐enhanced molecular beam epitaxy
JournalApplied Physics Letters
AuthorsKim, Jae‐HoonAuthor
Nouhi, AkbarAuthor
Radhakrishnan, GouriAuthor
Liu, John K.Author
Lang, Robert J.Author
Katz, JosephAuthor
Year1988 (October 3)Volume53
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.99992Search in ResearchGate
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Mindat Ref. ID8484351Long-form Identifiermindat:1:5:8484351:5
GUID0
Full ReferenceKim, Jae‐Hoon, Nouhi, Akbar, Radhakrishnan, Gouri, Liu, John K., Lang, Robert J., Katz, Joseph (1988) High‐peak‐power low‐threshold AlGaAs/GaAs stripe laser diodes on Si substrates grown by migration‐enhanced molecular beam epitaxy. Applied Physics Letters, 53 (14). 1248-1250 doi:10.1063/1.99992
Plain TextKim, Jae‐Hoon, Nouhi, Akbar, Radhakrishnan, Gouri, Liu, John K., Lang, Robert J., Katz, Joseph (1988) High‐peak‐power low‐threshold AlGaAs/GaAs stripe laser diodes on Si substrates grown by migration‐enhanced molecular beam epitaxy. Applied Physics Letters, 53 (14). 1248-1250 doi:10.1063/1.99992
In(1988, October) Applied Physics Letters Vol. 53 (14) AIP Publishing

See Also

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Kim, Jae-Hoon, Radhakrishnan, Gouri, Nouhi, Akbar, Liu, John K., Lang, Robert J., Katz, Joseph (1989) High-Power AlGaAs/GaAs DH Stripe Laser Diodes on GaAs-on-Si Prepared by Migration-Enhanced Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 28. 791-796 doi:10.1143/jjap.28.791
Kim, Jae‐Hoon, Liu, John K., Radhakrishnan, Gouri, Katz, Joseph, Sakai, Shiro, Chang, Shi S., El‐Masry, Nadia A. (1988) Growth and characterization of GaAs layers on Si substrates by migration‐enhanced molecular beam epitaxy. Applied Physics Letters, 53 (24). 2435-2437 doi:10.1063/1.100212
Sakai, Shiro, Chang, Shi S., Ramaswamy, Ramu V., Kim, Jae‐Hoon, Radhakrishnan, Gouri, Liu, John K., Katz, Joseph (1988) Al0.3Ga0.7As/Al0.05Ga0.95As light‐emitting diodes on GaAs‐coated Si substrates grown by liquid phase epitaxy. Applied Physics Letters, 53 (13). 1201-1203 doi:10.1063/1.100019
Kim, Jae‐Hoon, Lang, Robert J., Radhakrishnan, Gouri, Katz, Joseph, Narayanan, Authi A., Craig, Richard R. (1989) High‐power low‐threshold graded‐index separate confinement heterostructure AlGaAs single quantum well lasers on Si substrates. Applied Physics Letters, 55 (15). 1492-1494 doi:10.1063/1.101587
Nakamura, Shuji, Sakai, Shiro, Chang, Shi S., Ramaswamy, Ramu V., Kim, Jae-Hoon, Radhakrishnan, Gouri, Liu, John K., Katz, Joseph (1989) Transient-mode liquid phase epitaxial growth of GaAs on GaAs-coated Si substrates prepared by migration-enhanced molecular beam epitaxy. Journal of Crystal Growth, 97 (2). 303-309 doi:10.1016/0022-0248(89)90210-8
Nouhi, A., Radhakrishnan, G., Katz, J., Koliwad, K. (1988) Molecular beam epitaxy and metalorganic chemical vapor deposition growth of epitaxial CdTe on (100) GaAs/Si and (111) GaAs/Si substrates. Applied Physics Letters, 52 (24). 2028-2030 doi:10.1063/1.99571
Chong, Tow C., Fonstad, Clifton G. (1987) Low‐threshold operation of AlGaAs/GaAs multiple quantum well lasers grown on Si substrates by molecular beam epitaxy. Applied Physics Letters, 51 (4). 221-223 doi:10.1063/1.98481
Kim, Young‐Soon, Ramaswamy, Ramu V., Sakai, Shiro, Matyi, R. J., Shichijo, H. (1988) GaAs/AlGaAs optical waveguides on silicon substrates grown by molecular beam epitaxy. Applied Physics Letters, 53 (17). 1586-1587 doi:10.1063/1.99920
Burns, Geoffrey F., Blanck, Hervé, Fonstad, Clifton G. (1990) Low‐threshold GaAs/AlGaAs graded‐index separate confinement heterostructure lasers grown by molecular beam epitaxy on oxide‐masked Si substrates. Applied Physics Letters, 56 (25). 2499-2501 doi:10.1063/1.102870
Choi, H. K., Lee, J. W., Salerno, J. P., Connors, M. K., Tsaur, B‐Y., Fan, J. C. C. (1988) Low‐threshold GaAs/AlGaAs lasers grown on Si by organometallic vapor phase epitaxy. Applied Physics Letters, 52 (14). 1114-1115 doi:10.1063/1.99178
Chen, H. Z., Paslaski, J., Yariv, A., Morkoç, H. (1988) High‐frequency modulation of AlGaAs/GaAs lasers grown on Si substrate by molecular beam epitaxy. Applied Physics Letters, 52 (8). 605-606 doi:10.1063/1.99378
 
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