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Hageman, P.R., Haffouz, S., Kirilyuk, V., Macht, L., Weyher, J.L., Grzegorczyk, A., Larsen, P.K. (2001) Improvement of the Optical and Structural Properties of MOCVD Grown GaN on Sapphire by an in-situ SiN Treatment. physica status solidi (a), 188 (2). 659-662 doi:10.1002/1521-396x(200112)188:2<659::aid-pssa659>3.0.co;2-o

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Reference TypeJournal (article/letter/editorial)
TitleImprovement of the Optical and Structural Properties of MOCVD Grown GaN on Sapphire by an in-situ SiN Treatment
Journalphysica status solidi (a)
AuthorsHageman, P.R.Author
Haffouz, S.Author
Kirilyuk, V.Author
Macht, L.Author
Weyher, J.L.Author
Grzegorczyk, A.Author
Larsen, P.K.Author
Year2001 (December)Volume188
Issue2
PublisherWiley
DOIdoi:10.1002/1521-396x(200112)188:2<659::aid-pssa659>3.0.co;2-oSearch in ResearchGate
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Mindat Ref. ID5087006Long-form Identifiermindat:1:5:5087006:4
GUID0
Full ReferenceHageman, P.R., Haffouz, S., Kirilyuk, V., Macht, L., Weyher, J.L., Grzegorczyk, A., Larsen, P.K. (2001) Improvement of the Optical and Structural Properties of MOCVD Grown GaN on Sapphire by an in-situ SiN Treatment. physica status solidi (a), 188 (2). 659-662 doi:10.1002/1521-396x(200112)188:2<659::aid-pssa659>3.0.co;2-o
Plain TextHageman, P.R., Haffouz, S., Kirilyuk, V., Macht, L., Weyher, J.L., Grzegorczyk, A., Larsen, P.K. (2001) Improvement of the Optical and Structural Properties of MOCVD Grown GaN on Sapphire by an in-situ SiN Treatment. physica status solidi (a), 188 (2). 659-662 doi:10.1002/1521-396x(200112)188:23.0.co;2-o
In(2001, December) physica status solidi (a) Vol. 188 (2) Wiley

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Hageman, P.R., Haffouz, S., Kirilyuk, V., Grzegorczyk, A., Larsen, P.K. (2001) High Quality GaN Layers on Si(111) Substrates: AlN Buffer Layer Optimisation and Insertion of a SiN Intermediate Layer. physica status solidi (a), 188 (2). 523-526 doi:10.1002/1521-396x(200112)188:2<523::aid-pssa523>3.0.co;2-r
Kirilyuk, V., Hageman, P.R., Christianen, P.C.M., Corbeek, W.H.M., Zielinski, M., Macht, L., Weyher, J.L., Larsen, P.K. (2001) Investigation of Optical and Structural Properties of GaN Grown by Hydride Vapor-Phase Epitaxy. physica status solidi (a), 188 (1). 473-476 doi:10.1002/1521-396x(200111)188:1<473::aid-pssa473>3.0.co;2-d
Haffouz, S., Kirilyuk, V., Hageman, P. R., Macht, L., Weyher, J. L., Larsen, P. K. (2001) Improvement of the optical properties of metalorganic chemical vapor deposition grown GaN on sapphire by an in situ SiN treatment. Applied Physics Letters, 79 (15). 2390-2392 doi:10.1063/1.1409277
Kuhn, B., Scholz, F. (2001) An Oxygen Doped Nucleation Layer for the Growth of High Optical Quality GaN on Sapphire. physica status solidi (a), 188 (2). 629-633 doi:10.1002/1521-396x(200112)188:2<629::aid-pssa629>3.0.co;2-#
Geng, L., Ponce, F.A., Tanaka, S., Omiya, H., Nakagawa, Y. (2001) Surface Morphology of AlxGa1-xN Films Grown by MOCVD. physica status solidi (a), 188 (2). 803-806 doi:10.1002/1521-396x(200112)188:2<803::aid-pssa803>3.0.co;2-n
Georgakilas, A., Mikroulis, S., Cimalla, V., Zervos, M., Kostopoulos, A., Komninou, Ph., Kehagias, Th., Karakostas, Th. (2001) Effects of the Sapphire Nitridation on the Polarity and Structural Properties of GaN Layers Grown by Plasma-Assisted MBE. physica status solidi (a), 188 (2). 567-570 doi:10.1002/1521-396x(200112)188:2<567::aid-pssa567>3.0.co;2-w
Matsuoka, T., Hagiwara, E. (2001) GaN Growth on Novel Lattice-Matching Substrate: Tilted M-Plane Sapphire. physica status solidi (a), 188 (2). 485-489 doi:10.1002/1521-396x(200112)188:2<485::aid-pssa485>3.0.co;2-#
Grzegorczyk, A.P., Macht, L., Hageman, P.R., Weyher, J.L., Larsen, P.K. (2005) Influence of the nucleation layer morphology and epilayer structure on the resistivity of GaN films grown on c-plane sapphire by MOCVD. Journal of Crystal Growth, 273 (3). 424-430 doi:10.1016/j.jcrysgro.2004.09.100
Sun, X.L., Yang, Hui, Zhu, J.J., Wang, Y.T., Chen, Y., Li, G.H., Wang, Z.G. (2001) Influences of Initial Nitridation Process on the Optical and Structural Characterization of GaN Layer Grown on Sapphire (0001) by Metalorganic Chemical Vapor Deposition. physica status solidi (a), 188 (2). 653-657 doi:10.1002/1521-396x(200112)188:2<653::aid-pssa653>3.0.co;2-b
Setiagung, C., Wu, J., Onabe, K., Shiraki, Y. (2001) Selective Area Growth of GaN and Fabrication of GaN/AlGaN Quantum Wells on Grown Facets. physica status solidi (a), 188 (2). 719-723 doi:10.1002/1521-396x(200112)188:2<719::aid-pssa719>3.0.co;2-#
Hageman, W., Xie, Z., Edgar, J., Zhuang, D., Jagganathan, S., Chaudhuri, J., Rys, A., Schmitt, J. (2001) Growth of AIN on Etched 6H-SiC(0001) Substrates via MOCVD. physica status solidi (a), 188 (2). 783-787 doi:10.1002/1521-396x(200112)188:2<783::aid-pssa783>3.0.co;2-w
 
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