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Haffouz, S., Kirilyuk, V., Hageman, P. R., Macht, L., Weyher, J. L., Larsen, P. K. (2001) Improvement of the optical properties of metalorganic chemical vapor deposition grown GaN on sapphire by an in situ SiN treatment. Applied Physics Letters, 79 (15). 2390-2392 doi:10.1063/1.1409277

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Reference TypeJournal (article/letter/editorial)
TitleImprovement of the optical properties of metalorganic chemical vapor deposition grown GaN on sapphire by an in situ SiN treatment
JournalApplied Physics Letters
AuthorsHaffouz, S.Author
Kirilyuk, V.Author
Hageman, P. R.Author
Macht, L.Author
Weyher, J. L.Author
Larsen, P. K.Author
Year2001 (October 8)Volume79
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.1409277Search in ResearchGate
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Mindat Ref. ID8530167Long-form Identifiermindat:1:5:8530167:2
GUID0
Full ReferenceHaffouz, S., Kirilyuk, V., Hageman, P. R., Macht, L., Weyher, J. L., Larsen, P. K. (2001) Improvement of the optical properties of metalorganic chemical vapor deposition grown GaN on sapphire by an in situ SiN treatment. Applied Physics Letters, 79 (15). 2390-2392 doi:10.1063/1.1409277
Plain TextHaffouz, S., Kirilyuk, V., Hageman, P. R., Macht, L., Weyher, J. L., Larsen, P. K. (2001) Improvement of the optical properties of metalorganic chemical vapor deposition grown GaN on sapphire by an in situ SiN treatment. Applied Physics Letters, 79 (15). 2390-2392 doi:10.1063/1.1409277
In(2001, October) Applied Physics Letters Vol. 79 (15) AIP Publishing

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Hageman, P.R., Haffouz, S., Kirilyuk, V., Macht, L., Weyher, J.L., Grzegorczyk, A., Larsen, P.K. (2001) Improvement of the Optical and Structural Properties of MOCVD Grown GaN on Sapphire by an in-situ SiN Treatment. physica status solidi (a), 188 (2). 659-662 doi:10.1002/1521-396x(200112)188:2<659::aid-pssa659>3.0.co;2-o
Kirilyuk, V., Hageman, P. R., Christianen, P. C. M., Larsen, P. K., Zielinski, M. (2001) Optical investigation of shallow acceptor states in GaN grown by hydride vapor-phase epitaxy. Applied Physics Letters, 79 (25). 4109-4111 doi:10.1063/1.1427151
Macht, L., Hageman, P. R., Haffouz, S., Larsen, P. K. (2005) Microphotoluminescence mapping of laterally overgrown GaN layers on patterned Si (111) substrates. Applied Physics Letters, 87 (13). 131904pp. doi:10.1063/1.2042546
Kirilyuk, V., Hageman, P.R., Christianen, P.C.M., Corbeek, W.H.M., Zielinski, M., Macht, L., Weyher, J.L., Larsen, P.K. (2001) Investigation of Optical and Structural Properties of GaN Grown by Hydride Vapor-Phase Epitaxy. physica status solidi (a), 188 (1). 473-476 doi:10.1002/1521-396x(200111)188:1<473::aid-pssa473>3.0.co;2-d
Kirilyuk, V., Zauner, A. R. A., Christianen, P. C. M., Weyher, J. L., Hageman, P. R., Larsen, P. K. (2000) Exciton-related photoluminescence in homoepitaxial GaN of Ga and N polarities. Applied Physics Letters, 76 (17). 2355-2357 doi:10.1063/1.126344
Macht, L., Weyher, J. L., Grzegorczyk, A., Larsen, P. K. (2005) Statistical photoluminescence of dislocations and associated defects in heteroepitaxial GaN grown by metal organic chemical vapor deposition. Physical Review B, 71 (7) doi:10.1103/physrevb.71.073309
Macht, L, Weyher, J L, Hageman, P R, Zielinski, M, Larsen, P K (2002) The direct influence of polarity on structural and electro-optical properties of heteroepitaxial GaN. Journal of Physics: Condensed Matter, 14 (48). 13345-13350 doi:10.1088/0953-8984/14/48/387
Grudowski, P. A., Holmes, A. L., Eiting, C. J., Dupuis, R. D. (1996) The effect of substrate misorientation on the photoluminescence properties of GaN grown on sapphire by metalorganic chemical vapor deposition. Applied Physics Letters, 69 (24). 3626-3628 doi:10.1063/1.117004
Narayanan, V., Lorenz, K., Kim, Wook, Mahajan, S. (2001) Origins of threading dislocations in GaN epitaxial layers grown on sapphire by metalorganic chemical vapor deposition. Applied Physics Letters, 78 (11). 1544-1546 doi:10.1063/1.1352699
Someya, T., Hoshino, K., Arakawa, Y. (2001) Misorientation-angle dependence of GaN layers grown on a-plane sapphire substrates by metalorganic chemical vapor deposition. Applied Physics Letters, 79 (13). 1992-1994 doi:10.1063/1.1402636
Weyher, J. L., Tichelaar, F. D., Zandbergen, H. W., Macht, L., Hageman, P. R. (2001) Selective photoetching and transmission electron microscopy studies of defects in heteroepitaxial GaN. Journal of Applied Physics, 90 (12). 6105-6109 doi:10.1063/1.1416137
 
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