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Campion, R.P., Li, T., Foxon, C.T., Harrison, I. (2001) The Growth of GaN Using Plasma Assisted Metalorganic Vapour Phase Epitaxy. physica status solidi (a), 188 (2). 663-666 doi:10.1002/1521-396x(200112)188:2<663::aid-pssa663>3.0.co;2-7

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Reference TypeJournal (article/letter/editorial)
TitleThe Growth of GaN Using Plasma Assisted Metalorganic Vapour Phase Epitaxy
Journalphysica status solidi (a)
AuthorsCampion, R.P.Author
Li, T.Author
Foxon, C.T.Author
Harrison, I.Author
Year2001 (December)Volume188
Issue2
PublisherWiley
DOIdoi:10.1002/1521-396x(200112)188:2<663::aid-pssa663>3.0.co;2-7Search in ResearchGate
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Mindat Ref. ID5087008Long-form Identifiermindat:1:5:5087008:2
GUID0
Full ReferenceCampion, R.P., Li, T., Foxon, C.T., Harrison, I. (2001) The Growth of GaN Using Plasma Assisted Metalorganic Vapour Phase Epitaxy. physica status solidi (a), 188 (2). 663-666 doi:10.1002/1521-396x(200112)188:2<663::aid-pssa663>3.0.co;2-7
Plain TextCampion, R.P., Li, T., Foxon, C.T., Harrison, I. (2001) The Growth of GaN Using Plasma Assisted Metalorganic Vapour Phase Epitaxy. physica status solidi (a), 188 (2). 663-666 doi:10.1002/1521-396x(200112)188:23.0.co;2-7
In(2001, December) physica status solidi (a) Vol. 188 (2) Wiley

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Ohkawa, K., Hirako, A., Yoshitani, M. (2001) Growth of GaN Layers by One-, Two-, and Three-Flow Metalorganic Vapor Phase Epitaxy. physica status solidi (a), 188 (2). 621-624 doi:10.1002/1521-396x(200112)188:2<621::aid-pssa621>3.0.co;2-v
Xu, S.J., Or, C.T., Li, Q., Zheng, L.X., Xie, M.H., Tong, S.Y., Yang, Hui (2001) Defect States in Cubic GaN Epilayer Grown on GaAs by Metalorganic Vapor Phase Epitaxy. physica status solidi (a), 188 (2). 681-685 doi:10.1002/1521-396x(200112)188:2<681::aid-pssa681>3.0.co;2-7
Foxon, C.T., Novikov, S.V., Li, T., Campion, R.P., Winser, A.J., Harrison, I. (2002) Bismuth a New Surfactant or Contact for GaN Films Grown by Molecular Beam Epitaxy. physica status solidi (a), 192 (2). 441-445 doi:10.1002/1521-396x(200208)192:2<441::aid-pssa441>3.0.co;2-u
Hashimoto, A., Mori, H., Nishio, Y., Li, T., Foxon, C.T., Yamamoto, A. (2001) Suppression of Hexagonal GaN in Cubic GaN Growth by In Surfactant Effect Combined with the Precise Control of V/III Ratio. physica status solidi (a), 188 (2). 691-694 doi:10.1002/1521-396x(200112)188:2<691::aid-pssa691>3.0.co;2-3
Cui, Y., Li, L. (2001) Suppression of Spiral Growth in Molecular Beam Epitaxy of GaN on Vicinal 6H-SiC(0001). physica status solidi (a), 188 (2). 583-586 doi:10.1002/1521-396x(200112)188:2<583::aid-pssa583>3.0.co;2-3
Honda, T., Sato, K., Hashimoto, T., Shinohara, M., Kawanishi, H. (2001) GaN Growth by Compound Source MBE Using GaN Powder. physica status solidi (a), 188 (2). 587-590 doi:10.1002/1521-396x(200112)188:2<587::aid-pssa587>3.0.co;2-o
Harafuji, K. (2001) Gas-Phase and Surface Reactions in a Horizontal Reactor for GaN MOVPE Growth. physica status solidi (a), 188 (2). 635-639 doi:10.1002/1521-396x(200112)188:2<635::aid-pssa635>3.0.co;2-b
Matsuoka, T., Hagiwara, E. (2001) GaN Growth on Novel Lattice-Matching Substrate: Tilted M-Plane Sapphire. physica status solidi (a), 188 (2). 485-489 doi:10.1002/1521-396x(200112)188:2<485::aid-pssa485>3.0.co;2-#
Foxon, C.T., Novikov, S.V., Li, T., Campion, R.P., Winser, A.J., Harrison, I. (2002) Optimisation of the Blue Emission from As-Doped GaN Films Grown by Molecular Beam Epitaxy. physica status solidi (a), 192 (1). 39-43 doi:10.1002/1521-396x(200207)192:1<39::aid-pssa39>3.0.co;2-d
Ng, H.M., Gmachl, C., Siegrist, T., Chu, S.N.G., Cho, A.Y. (2001) Growth and Characterization of GaN/AlGaN Superlattices for Near-Infrared Intersubband Transitions. physica status solidi (a), 188 (2). 825-831 doi:10.1002/1521-396x(200112)188:2<825::aid-pssa825>3.0.co;2-7
Shishkin, Y., Devaty, R.P., Choyke, W.J., Yun, F., King, T., Morko�, H. (2001) Near Bandedge Cathodoluminescence Studies of AlN Films: Dependence on MBE Growth Conditions. physica status solidi (a), 188 (2). 591-594 doi:10.1002/1521-396x(200112)188:2<591::aid-pssa591>3.0.co;2-7
 
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