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Xu, S.J., Or, C.T., Li, Q., Zheng, L.X., Xie, M.H., Tong, S.Y., Yang, Hui (2001) Defect States in Cubic GaN Epilayer Grown on GaAs by Metalorganic Vapor Phase Epitaxy. physica status solidi (a), 188 (2). 681-685 doi:10.1002/1521-396x(200112)188:2<681::aid-pssa681>3.0.co;2-7

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Reference TypeJournal (article/letter/editorial)
TitleDefect States in Cubic GaN Epilayer Grown on GaAs by Metalorganic Vapor Phase Epitaxy
Journalphysica status solidi (a)
AuthorsXu, S.J.Author
Or, C.T.Author
Li, Q.Author
Zheng, L.X.Author
Xie, M.H.Author
Tong, S.Y.Author
Yang, HuiAuthor
Year2001 (December)Volume188
Issue2
PublisherWiley
DOIdoi:10.1002/1521-396x(200112)188:2<681::aid-pssa681>3.0.co;2-7Search in ResearchGate
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Mindat Ref. ID5087017Long-form Identifiermindat:1:5:5087017:0
GUID0
Full ReferenceXu, S.J., Or, C.T., Li, Q., Zheng, L.X., Xie, M.H., Tong, S.Y., Yang, Hui (2001) Defect States in Cubic GaN Epilayer Grown on GaAs by Metalorganic Vapor Phase Epitaxy. physica status solidi (a), 188 (2). 681-685 doi:10.1002/1521-396x(200112)188:2<681::aid-pssa681>3.0.co;2-7
Plain TextXu, S.J., Or, C.T., Li, Q., Zheng, L.X., Xie, M.H., Tong, S.Y., Yang, Hui (2001) Defect States in Cubic GaN Epilayer Grown on GaAs by Metalorganic Vapor Phase Epitaxy. physica status solidi (a), 188 (2). 681-685 doi:10.1002/1521-396x(200112)188:23.0.co;2-7
In(2001, December) physica status solidi (a) Vol. 188 (2) Wiley

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Campion, R.P., Li, T., Foxon, C.T., Harrison, I. (2001) The Growth of GaN Using Plasma Assisted Metalorganic Vapour Phase Epitaxy. physica status solidi (a), 188 (2). 663-666 doi:10.1002/1521-396x(200112)188:2<663::aid-pssa663>3.0.co;2-7
Ohkawa, K., Hirako, A., Yoshitani, M. (2001) Growth of GaN Layers by One-, Two-, and Three-Flow Metalorganic Vapor Phase Epitaxy. physica status solidi (a), 188 (2). 621-624 doi:10.1002/1521-396x(200112)188:2<621::aid-pssa621>3.0.co;2-v
Mitate, T., Sonoda, Y., Oki, K., Kuwano, N., Kumagai, Y., Murakami, H., Koukitu, A. (2001) Transmission Electron Microscope Analysis of Microstructures in GaN Grown on (111)A and (111)B of GaAs by Metalorganic Hydrogen Chloride Vapor-Phase Epitaxy. physica status solidi (a), 188 (2). 557-560 doi:10.1002/1521-396x(200112)188:2<557::aid-pssa557>3.0.co;2-#
Schenk, H.P.D., Feltin, E., Vaille, M., Gibart, P., Kunze, R., Schmidt, H., Weihnacht, M., Dogh�che, E. (2001) Acoustical and Optical Gallium Nitride Waveguides Grown on Si(111) by Metalorganic Vapor Phase Epitaxy. physica status solidi (a), 188 (2). 537-541 doi:10.1002/1521-396x(200112)188:2<537::aid-pssa537>3.0.co;2-7
Feltin, E., Beaumont, B., La�gt, M., de Mierry, P., Venn�gu�s, P., Leroux, M., Gibart, P. (2001) Crack-Free Thick GaN Layers on Silicon (111) by Metalorganic Vapor Phase Epitaxy. physica status solidi (a), 188 (2). 531-535 doi:10.1002/1521-396x(200112)188:2<531::aid-pssa531>3.0.co;2-v
Sun, X.L., Yang, Hui, Zhu, J.J., Wang, Y.T., Chen, Y., Li, G.H., Wang, Z.G. (2001) Influences of Initial Nitridation Process on the Optical and Structural Characterization of GaN Layer Grown on Sapphire (0001) by Metalorganic Chemical Vapor Deposition. physica status solidi (a), 188 (2). 653-657 doi:10.1002/1521-396x(200112)188:2<653::aid-pssa653>3.0.co;2-b
Cui, Y., Li, L. (2001) Suppression of Spiral Growth in Molecular Beam Epitaxy of GaN on Vicinal 6H-SiC(0001). physica status solidi (a), 188 (2). 583-586 doi:10.1002/1521-396x(200112)188:2<583::aid-pssa583>3.0.co;2-3
Kumagai, Y., Murakami, H., Seki, H., Koukitu, A. (2001) Comparison of GaN Buffer Layers Grown on GaAs (111)A and (111)B Surfaces. physica status solidi (a), 188 (2). 549-552 doi:10.1002/1521-396x(200112)188:2<549::aid-pssa549>3.0.co;2-w
Harafuji, K. (2001) Gas-Phase and Surface Reactions in a Horizontal Reactor for GaN MOVPE Growth. physica status solidi (a), 188 (2). 635-639 doi:10.1002/1521-396x(200112)188:2<635::aid-pssa635>3.0.co;2-b
Hashimoto, A., Mori, H., Nishio, Y., Li, T., Foxon, C.T., Yamamoto, A. (2001) Suppression of Hexagonal GaN in Cubic GaN Growth by In Surfactant Effect Combined with the Precise Control of V/III Ratio. physica status solidi (a), 188 (2). 691-694 doi:10.1002/1521-396x(200112)188:2<691::aid-pssa691>3.0.co;2-3
Setiagung, C., Wu, J., Onabe, K., Shiraki, Y. (2001) Selective Area Growth of GaN and Fabrication of GaN/AlGaN Quantum Wells on Grown Facets. physica status solidi (a), 188 (2). 719-723 doi:10.1002/1521-396x(200112)188:2<719::aid-pssa719>3.0.co;2-#
 
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