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Araki, T., Minami, T., Kijima, M., Nanishi, Y. (2001) Structural Control of Cubic and Hexagonal GaN by Changing the Electric Bias during ECR-MBE Growth. physica status solidi (a), 188 (2). 677-680 doi:10.1002/1521-396x(200112)188:2<677::aid-pssa677>3.0.co;2-o

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Reference TypeJournal (article/letter/editorial)
TitleStructural Control of Cubic and Hexagonal GaN by Changing the Electric Bias during ECR-MBE Growth
Journalphysica status solidi (a)
AuthorsAraki, T.Author
Minami, T.Author
Kijima, M.Author
Nanishi, Y.Author
Year2001 (December)Volume188
Issue2
PublisherWiley
DOIdoi:10.1002/1521-396x(200112)188:2<677::aid-pssa677>3.0.co;2-oSearch in ResearchGate
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Mindat Ref. ID5087014Long-form Identifiermindat:1:5:5087014:3
GUID0
Full ReferenceAraki, T., Minami, T., Kijima, M., Nanishi, Y. (2001) Structural Control of Cubic and Hexagonal GaN by Changing the Electric Bias during ECR-MBE Growth. physica status solidi (a), 188 (2). 677-680 doi:10.1002/1521-396x(200112)188:2<677::aid-pssa677>3.0.co;2-o
Plain TextAraki, T., Minami, T., Kijima, M., Nanishi, Y. (2001) Structural Control of Cubic and Hexagonal GaN by Changing the Electric Bias during ECR-MBE Growth. physica status solidi (a), 188 (2). 677-680 doi:10.1002/1521-396x(200112)188:23.0.co;2-o
In(2001, December) physica status solidi (a) Vol. 188 (2) Wiley

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Araki, T., Minami, T., Nanishi, Y. (1999) Microstructures of Cubic and Hexagonal GaN Grown on (0001) Sapphire by ECR-MBE with Various Electric Biases. physica status solidi (a), 176 (1). 487-491 doi:10.1002/(sici)1521-396x(199911)176:1<487::aid-pssa487>3.0.co;2-v
Honda, T., Sato, K., Hashimoto, T., Shinohara, M., Kawanishi, H. (2001) GaN Growth by Compound Source MBE Using GaN Powder. physica status solidi (a), 188 (2). 587-590 doi:10.1002/1521-396x(200112)188:2<587::aid-pssa587>3.0.co;2-o
Hashimoto, A., Mori, H., Nishio, Y., Li, T., Foxon, C.T., Yamamoto, A. (2001) Suppression of Hexagonal GaN in Cubic GaN Growth by In Surfactant Effect Combined with the Precise Control of V/III Ratio. physica status solidi (a), 188 (2). 691-694 doi:10.1002/1521-396x(200112)188:2<691::aid-pssa691>3.0.co;2-3
Matsuoka, T., Hagiwara, E. (2001) GaN Growth on Novel Lattice-Matching Substrate: Tilted M-Plane Sapphire. physica status solidi (a), 188 (2). 485-489 doi:10.1002/1521-396x(200112)188:2<485::aid-pssa485>3.0.co;2-#
Tampo, H., Yamada, K., Ohnishi, K., Imanishi, Y., Asami, K., Asahi, H. (2001) Ammonia Source MBE Growth of Polycrystalline GaN p-n Junction. physica status solidi (a), 188 (2). 605-609 doi:10.1002/1521-396x(200112)188:2<605::aid-pssa605>3.0.co;2-n
Ohta, J., Fujioka, H., Takahashi, H., Oshima, M. (2001) Crystal Growth of GaN on (Mn,Zn)Fe2O4 Substrates. physica status solidi (a), 188 (2). 497-500 doi:10.1002/1521-396x(200112)188:2<497::aid-pssa497>3.0.co;2-o
Shishkin, Y., Devaty, R.P., Choyke, W.J., Yun, F., King, T., Morko�, H. (2001) Near Bandedge Cathodoluminescence Studies of AlN Films: Dependence on MBE Growth Conditions. physica status solidi (a), 188 (2). 591-594 doi:10.1002/1521-396x(200112)188:2<591::aid-pssa591>3.0.co;2-7
Hoshino, K., Someya, T., Arakawa, Y. (2001) Structure Dependence of Electron Mobility in GaN/AlGaN Multiple Quantum Wells. physica status solidi (a), 188 (2). 877-880 doi:10.1002/1521-396x(200112)188:2<877::aid-pssa877>3.0.co;2-g
Maruyama, T., Hagio, Y., Miyajima, T., Kijima, S., Nanishi, Y., Akimoto, K. (2001) Effects of Annealing on the Interface Properties between Ni and p-GaN. physica status solidi (a), 188 (1). 375-378 doi:10.1002/1521-396x(200111)188:1<375::aid-pssa375>3.0.co;2-9
Karpov, S.Yu., Makarov, Yu.N. (2001) Surface Segregation in Group-III Nitride MBE. physica status solidi (a), 188 (2). 611-614 doi:10.1002/1521-396x(200112)188:2<611::aid-pssa611>3.0.co;2-z
Campion, R.P., Li, T., Foxon, C.T., Harrison, I. (2001) The Growth of GaN Using Plasma Assisted Metalorganic Vapour Phase Epitaxy. physica status solidi (a), 188 (2). 663-666 doi:10.1002/1521-396x(200112)188:2<663::aid-pssa663>3.0.co;2-7
 
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