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Zubrilov, A. S., Nikishin, S. A., Kipshidze, G. D., Kuryatkov, V. V., Temkin, H., Prokofyeva, T. I., Holtz, M. (2002) Optical properties of GaN grown on Si (111) by gas source molecular beam epitaxy with ammonia. Journal of Applied Physics, 91 (3). 1209-1212 doi:10.1063/1.1430535

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Reference TypeJournal (article/letter/editorial)
TitleOptical properties of GaN grown on Si (111) by gas source molecular beam epitaxy with ammonia
JournalJournal of Applied Physics
AuthorsZubrilov, A. S.Author
Nikishin, S. A.Author
Kipshidze, G. D.Author
Kuryatkov, V. V.Author
Temkin, H.Author
Prokofyeva, T. I.Author
Holtz, M.Author
Year2002 (February)Volume91
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.1430535Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5113516Long-form Identifiermindat:1:5:5113516:2
GUID0
Full ReferenceZubrilov, A. S., Nikishin, S. A., Kipshidze, G. D., Kuryatkov, V. V., Temkin, H., Prokofyeva, T. I., Holtz, M. (2002) Optical properties of GaN grown on Si (111) by gas source molecular beam epitaxy with ammonia. Journal of Applied Physics, 91 (3). 1209-1212 doi:10.1063/1.1430535
Plain TextZubrilov, A. S., Nikishin, S. A., Kipshidze, G. D., Kuryatkov, V. V., Temkin, H., Prokofyeva, T. I., Holtz, M. (2002) Optical properties of GaN grown on Si (111) by gas source molecular beam epitaxy with ammonia. Journal of Applied Physics, 91 (3). 1209-1212 doi:10.1063/1.1430535
In(2002, February) Journal of Applied Physics Vol. 91 (3) AIP Publishing

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Nikishin, S. A., Antipov, V. G., Francoeur, S., Faleev, N. N., Seryogin, G. A., Elyukhin, V. A., Temkin, H., Prokofyeva, T. I., Holtz, M., Konkar, A., Zollner, S. (1999) High-quality AlN grown on Si(111) by gas-source molecular-beam epitaxy with ammonia. Applied Physics Letters, 75 (4). 484-486 doi:10.1063/1.124423
Kipshidze, G., Kuryatkov, V., Borisov, B., Holtz, M., Nikishin, S., Temkin, H. (2002) AlGaInN-based ultraviolet light-emitting diodes grown on Si(111). Applied Physics Letters, 80 (20). 3682-3684 doi:10.1063/1.1480886
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