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Kipshidze, G., Kuryatkov, V., Borisov, B., Holtz, M., Nikishin, S., Temkin, H. (2002) AlGaInN-based ultraviolet light-emitting diodes grown on Si(111). Applied Physics Letters, 80 (20). 3682-3684 doi:10.1063/1.1480886

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Reference TypeJournal (article/letter/editorial)
TitleAlGaInN-based ultraviolet light-emitting diodes grown on Si(111)
JournalApplied Physics Letters
AuthorsKipshidze, G.Author
Kuryatkov, V.Author
Borisov, B.Author
Holtz, M.Author
Nikishin, S.Author
Temkin, H.Author
Year2002 (May 20)Volume80
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.1480886Search in ResearchGate
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Mindat Ref. ID8532077Long-form Identifiermindat:1:5:8532077:4
GUID0
Full ReferenceKipshidze, G., Kuryatkov, V., Borisov, B., Holtz, M., Nikishin, S., Temkin, H. (2002) AlGaInN-based ultraviolet light-emitting diodes grown on Si(111). Applied Physics Letters, 80 (20). 3682-3684 doi:10.1063/1.1480886
Plain TextKipshidze, G., Kuryatkov, V., Borisov, B., Holtz, M., Nikishin, S., Temkin, H. (2002) AlGaInN-based ultraviolet light-emitting diodes grown on Si(111). Applied Physics Letters, 80 (20). 3682-3684 doi:10.1063/1.1480886
In(2002, May) Applied Physics Letters Vol. 80 (20) AIP Publishing

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