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El Kamel, F., Gonon, P., Yangui, B., Jomni, F. (2007) Ionic and electronic defects in a-BaTiO3 thin films studied by transient and steady state conductivity measurements. physica status solidi (c), 4 (3). 1242-1245 doi:10.1002/pssc.200673795

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Reference TypeJournal (article/letter/editorial)
TitleIonic and electronic defects in a-BaTiO3 thin films studied by transient and steady state conductivity measurements
Journalphysica status solidi (c)
AuthorsEl Kamel, F.Author
Gonon, P.Author
Yangui, B.Author
Jomni, F.Author
Year2007 (March)Volume4
Issue3
PublisherWiley
DOIdoi:10.1002/pssc.200673795Search in ResearchGate
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Mindat Ref. ID5113989Long-form Identifiermindat:1:5:5113989:4
GUID0
Full ReferenceEl Kamel, F., Gonon, P., Yangui, B., Jomni, F. (2007) Ionic and electronic defects in a-BaTiO3 thin films studied by transient and steady state conductivity measurements. physica status solidi (c), 4 (3). 1242-1245 doi:10.1002/pssc.200673795
Plain TextEl Kamel, F., Gonon, P., Yangui, B., Jomni, F. (2007) Ionic and electronic defects in a-BaTiO3 thin films studied by transient and steady state conductivity measurements. physica status solidi (c), 4 (3). 1242-1245 doi:10.1002/pssc.200673795
In(2007, March) physica status solidi (c) Vol. 4 (3) Wiley

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El Kamel, F., Gonon, P., Ortega, L., Jomni, F., Yangui, B. (2006) Space charge limited transient currents and oxygen vacancy mobility in amorphous BaTiO3 thin films. Journal of Applied Physics, 99 (9). 94107pp. doi:10.1063/1.2196112
El Kamel, F., Gonon, P., Jomni, F., Yangui, B. (2008) Observation of negative capacitances in metal-insulator-metal devices based on a-BaTiO3:H. Applied Physics Letters, 93 (4). 42904pp. doi:10.1063/1.2966352
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Montereali, R. M., Bonfigli, F., Marolo, T., Mussi, V., Nichelatti, E. (2007) Toward control of point defects in lithium fluoride thin layers. physica status solidi (c), 4 (3). 864-869 doi:10.1002/pssc.200673856
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Kahouli, A., Sylvestre, A., Jomni, F., Yangui, B., Legrand, J. (2012) Ac-conductivity and dielectric relaxations above glass transition temperature for parylene-C thin films. Applied Physics A, 106. 909-913 doi:10.1007/s00339-011-6706-4
 
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