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Jagoda, A., Stańczyk, B., Dobrzański, L., Diduszko, R. (2007) Polycrystalline GaN layer recrystallization by metal-induced method during the baking process. physica status solidi (c), 4 (4). 1423-1426 doi:10.1002/pssc.200674156

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Reference TypeJournal (article/letter/editorial)
TitlePolycrystalline GaN layer recrystallization by metal-induced method during the baking process
Journalphysica status solidi (c)
AuthorsJagoda, A.Author
Stańczyk, B.Author
Dobrzański, L.Author
Diduszko, R.Author
Year2007 (April)Volume4
Issue4
PublisherWiley
DOIdoi:10.1002/pssc.200674156Search in ResearchGate
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Mindat Ref. ID5114224Long-form Identifiermindat:1:5:5114224:1
GUID0
Full ReferenceJagoda, A., Stańczyk, B., Dobrzański, L., Diduszko, R. (2007) Polycrystalline GaN layer recrystallization by metal-induced method during the baking process. physica status solidi (c), 4 (4). 1423-1426 doi:10.1002/pssc.200674156
Plain TextJagoda, A., Stańczyk, B., Dobrzański, L., Diduszko, R. (2007) Polycrystalline GaN layer recrystallization by metal-induced method during the baking process. physica status solidi (c), 4 (4). 1423-1426 doi:10.1002/pssc.200674156
In(2007, April) physica status solidi (c) Vol. 4 (4) Wiley

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