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Ng, J. S., David, J. P. R., Rees, G. J., Allam, J. (2002) Avalanche breakdown voltage of In0.53Ga0.47As. Journal of Applied Physics, 91 (8). 5200-5202 doi:10.1063/1.1462845

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Reference TypeJournal (article/letter/editorial)
TitleAvalanche breakdown voltage of In0.53Ga0.47As
JournalJournal of Applied Physics
AuthorsNg, J. S.Author
David, J. P. R.Author
Rees, G. J.Author
Allam, J.Author
Year2002 (April 15)Volume91
Issue8
PublisherAIP Publishing
DOIdoi:10.1063/1.1462845Search in ResearchGate
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Mindat Ref. ID5114680Long-form Identifiermindat:1:5:5114680:3
GUID0
Full ReferenceNg, J. S., David, J. P. R., Rees, G. J., Allam, J. (2002) Avalanche breakdown voltage of In0.53Ga0.47As. Journal of Applied Physics, 91 (8). 5200-5202 doi:10.1063/1.1462845
Plain TextNg, J. S., David, J. P. R., Rees, G. J., Allam, J. (2002) Avalanche breakdown voltage of In0.53Ga0.47As. Journal of Applied Physics, 91 (8). 5200-5202 doi:10.1063/1.1462845
In(2002, April) Journal of Applied Physics Vol. 91 (8) AIP Publishing

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David, J. P. R., Allam, J., Adams, A. R., Roberts, J. S., Grey, R., Rees, G. J., Robson, P. N. (1995) Avalanche breakdown in AlxGa1−xAs alloys and Al0.3Ga0.7As/GaAs multilayers. Applied Physics Letters, 66 (21). 2876-2878 doi:10.1063/1.113459
Hambleton, P. J., Plimmer, S. A., David, J. P. R., Rees, G. J., Dunn, G. M. (2002) Simulated current response in avalanche photodiodes. Journal of Applied Physics, 91 (4). 2107-2111 doi:10.1063/1.1432122
Tan, C. H., Rees, G. J., Houston, P. A., Ng, J. S., Ng, W. K., David, J. P. R. (2004) Temperature dependence of electron impact ionization in In0.53Ga0.47As. Applied Physics Letters, 84 (13). 2322-2324 doi:10.1063/1.1691192
Ong, D. S., Rees, G. J., David, J. P. R. (2003) Avalanche speed in thin avalanche photodiodes. Journal of Applied Physics, 93 (7). 4232-4239 doi:10.1063/1.1557785
Groves, C., Harrison, C. N., David, J. P. R., Rees, G. J. (2004) Temperature dependence of breakdown voltage in AlxGa1−xAs. Journal of Applied Physics, 96 (9). 5017-5019 doi:10.1063/1.1803944
Groves, C., David, J. P. R., Rees, G. J., Ong, D. S. (2004) Modeling of avalanche multiplication and noise in heterojunction avalanche photodiodes. Journal of Applied Physics, 95 (11). 6245-6251 doi:10.1063/1.1719269
Harrison, C. N., David, J. P. R., Hopkinson, M., Rees, G. J. (2002) Temperature dependence of avalanche multiplication in submicron Al0.6Ga0.4As diodes. Journal of Applied Physics, 92 (12). 7684-7686 doi:10.1063/1.1524017
Jacob, Biju, Robson, P. N., David, J. P. R., Rees, G. J. (2002) Fokker–Planck approach to impact ionization distributions in space and time. Journal of Applied Physics, 91 (8). 5438-5441 doi:10.1063/1.1458054
Chia, C. K, Ng, B. K., David, J. P. R., Rees, G. J., Tozer, R. C., Hopkinson, M., Airey, R. J., Robson, P. N. (2003) Multiplication and excess noise in AlxGa1−xAs/GaAs multilayer avalanche photodiodes. Journal of Applied Physics, 94 (4). 2631-2637 doi:10.1063/1.1593217
Das, J., Degraeve, R., Roussel, P., Groeseneken, G., Borghs, G., Boeck, J. De (2002) Area scaling and voltage dependence of time-to-breakdown in magnetic tunnel junctions. Journal of Applied Physics, 91 (10). 7712pp. doi:10.1063/1.1447180
Ong, Jennifer S. L., Ng, Jo S., Krysa, Andrey B., David, John P. R. (2014) Temperature dependence of avalanche multiplication and breakdown voltage in Al0.52In0.48P. Journal of Applied Physics, 115 (6). 64507pp. doi:10.1063/1.4865743
 
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