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Jacob, Biju, Robson, P. N., David, J. P. R., Rees, G. J. (2002) Fokker–Planck approach to impact ionization distributions in space and time. Journal of Applied Physics, 91 (8). 5438-5441 doi:10.1063/1.1458054

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Reference TypeJournal (article/letter/editorial)
TitleFokker–Planck approach to impact ionization distributions in space and time
JournalJournal of Applied Physics
AuthorsJacob, BijuAuthor
Robson, P. N.Author
David, J. P. R.Author
Rees, G. J.Author
Year2002 (April 15)Volume91
Issue8
PublisherAIP Publishing
DOIdoi:10.1063/1.1458054Search in ResearchGate
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Mindat Ref. ID5114562Long-form Identifiermindat:1:5:5114562:8
GUID0
Full ReferenceJacob, Biju, Robson, P. N., David, J. P. R., Rees, G. J. (2002) Fokker–Planck approach to impact ionization distributions in space and time. Journal of Applied Physics, 91 (8). 5438-5441 doi:10.1063/1.1458054
Plain TextJacob, Biju, Robson, P. N., David, J. P. R., Rees, G. J. (2002) Fokker–Planck approach to impact ionization distributions in space and time. Journal of Applied Physics, 91 (8). 5438-5441 doi:10.1063/1.1458054
In(2002, April) Journal of Applied Physics Vol. 91 (8) AIP Publishing

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Jacob, Biju, Robson, P. N., David, J. P. R., Rees, G. J. (2001) Fokker–Planck model for nonlocal impact ionization in semiconductors. Journal of Applied Physics, 90 (3). 1314-1317 doi:10.1063/1.1384854
Plimmer, S. A., David, J. P. R., Jacob, B., Rees, G. J. (2001) Impact ionization probabilities as functions of two-dimensional space and time. Journal of Applied Physics, 89 (5). 2742-2751 doi:10.1063/1.1342190
Chia, C. K., David, J. P. R., Rees, G. J., Plimmer, S. A., Grey, R., Robson, P. N. (1998) Impact ionization in AlxGa1−xAs/GaAs single heterostructures. Journal of Applied Physics, 84 (8). 4363-4369 doi:10.1063/1.368656
Ghin, R., David, J. P. R., Hopkinson, M., Pate, M. A., Rees, G. J., Robson, P. N. (1997) Impact ionization coefficients in GaInPp–i–ndiodes. Applied Physics Letters, 70 (26). 3567-3569 doi:10.1063/1.119235
Hambleton, P. J., David, J. P. R., Rees, G. J. (2004) Enhanced carrier velocity to early impact ionization. Journal of Applied Physics, 95 (7). 3561-3564 doi:10.1063/1.1646434
Ong, D. S., Li, K. F., Plimmer, S. A., Rees, G. J., David, J. P. R., Robson, P. N. (2000) Full band Monte Carlo modeling of impact ionization, avalanche multiplication, and noise in submicron GaAs p+-i-n+ diodes. Journal of Applied Physics, 87 (11). 7885-7891 doi:10.1063/1.373472
Ng, J. S., David, J. P. R., Rees, G. J., Allam, J. (2002) Avalanche breakdown voltage of In0.53Ga0.47As. Journal of Applied Physics, 91 (8). 5200-5202 doi:10.1063/1.1462845
Ong, D. S., Li, K. F., Rees, G. J., David, J. P. R., Robson, P. N. (1998) A simple model to determine multiplication and noise in avalanche photodiodes. Journal of Applied Physics, 83 (6). 3426-3428 doi:10.1063/1.367111
Hambleton, P. J., Plimmer, S. A., David, J. P. R., Rees, G. J., Dunn, G. M. (2002) Simulated current response in avalanche photodiodes. Journal of Applied Physics, 91 (4). 2107-2111 doi:10.1063/1.1432122
David, J. P. R., Allam, J., Adams, A. R., Roberts, J. S., Grey, R., Rees, G. J., Robson, P. N. (1995) Avalanche breakdown in AlxGa1−xAs alloys and Al0.3Ga0.7As/GaAs multilayers. Applied Physics Letters, 66 (21). 2876-2878 doi:10.1063/1.113459
Tan, C. H., David, J. P. R., Rees, G. J., Tozer, R. C., Herbert, D. C. (2001) Treatment of soft threshold in impact ionization. Journal of Applied Physics, 90 (5). 2538-2543 doi:10.1063/1.1388865
 
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