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Plimmer, S. A., David, J. P. R., Jacob, B., Rees, G. J. (2001) Impact ionization probabilities as functions of two-dimensional space and time. Journal of Applied Physics, 89 (5). 2742-2751 doi:10.1063/1.1342190

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Reference TypeJournal (article/letter/editorial)
TitleImpact ionization probabilities as functions of two-dimensional space and time
JournalJournal of Applied Physics
AuthorsPlimmer, S. A.Author
David, J. P. R.Author
Jacob, B.Author
Rees, G. J.Author
Year2001 (March)Volume89
Issue5
PublisherAIP Publishing
DOIdoi:10.1063/1.1342190Search in ResearchGate
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Mindat Ref. ID5108002Long-form Identifiermindat:1:5:5108002:0
GUID0
Full ReferencePlimmer, S. A., David, J. P. R., Jacob, B., Rees, G. J. (2001) Impact ionization probabilities as functions of two-dimensional space and time. Journal of Applied Physics, 89 (5). 2742-2751 doi:10.1063/1.1342190
Plain TextPlimmer, S. A., David, J. P. R., Jacob, B., Rees, G. J. (2001) Impact ionization probabilities as functions of two-dimensional space and time. Journal of Applied Physics, 89 (5). 2742-2751 doi:10.1063/1.1342190
In(2001, March) Journal of Applied Physics Vol. 89 (5) AIP Publishing

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Ng, B. K., David, J. P. R., Plimmer, S. A., Hopkinson, M., Tozer, R. C., Rees, G. J. (2000) Impact ionization coefficients of Al0.8Ga0.2As. Applied Physics Letters, 77 (26). 4374-4376 doi:10.1063/1.1336556
Jacob, Biju, Robson, P. N., David, J. P. R., Rees, G. J. (2002) Fokker–Planck approach to impact ionization distributions in space and time. Journal of Applied Physics, 91 (8). 5438-5441 doi:10.1063/1.1458054
Chia, C. K., David, J. P. R., Rees, G. J., Plimmer, S. A., Grey, R., Robson, P. N. (1998) Impact ionization in AlxGa1−xAs/GaAs single heterostructures. Journal of Applied Physics, 84 (8). 4363-4369 doi:10.1063/1.368656
Jacob, Biju, Robson, P. N., David, J. P. R., Rees, G. J. (2001) Fokker–Planck model for nonlocal impact ionization in semiconductors. Journal of Applied Physics, 90 (3). 1314-1317 doi:10.1063/1.1384854
Plimmer, S. A., David, J. P. R., Rees, G. J., Grey, R., Herbert, D. C., Wight, D. R., Higgs, A. W. (1997) Impact ionization in thin AlxGa1−xAs (x=0.15 and 0.30)p-i-ndiodes. Journal of Applied Physics, 82 (3). 1231-1235 doi:10.1063/1.365940
Ong, D. S., Li, K. F., Plimmer, S. A., Rees, G. J., David, J. P. R., Robson, P. N. (2000) Full band Monte Carlo modeling of impact ionization, avalanche multiplication, and noise in submicron GaAs p+-i-n+ diodes. Journal of Applied Physics, 87 (11). 7885-7891 doi:10.1063/1.373472
Tan, C. H., David, J. P. R., Rees, G. J., Tozer, R. C., Herbert, D. C. (2001) Treatment of soft threshold in impact ionization. Journal of Applied Physics, 90 (5). 2538-2543 doi:10.1063/1.1388865
Hambleton, P. J., Plimmer, S. A., David, J. P. R., Rees, G. J., Dunn, G. M. (2002) Simulated current response in avalanche photodiodes. Journal of Applied Physics, 91 (4). 2107-2111 doi:10.1063/1.1432122
Chia, C. K., David, J. P. R., Plimmer, S. A., Rees, G. J., Grey, R., Robson, P. N. (2000) Avalanche multiplication in submicron AlxGa1−xAs/GaAs multilayer structures. Journal of Applied Physics, 88 (5). 2601-2608 doi:10.1063/1.1286329
Hambleton, P. J., David, J. P. R., Rees, G. J. (2004) Enhanced carrier velocity to early impact ionization. Journal of Applied Physics, 95 (7). 3561-3564 doi:10.1063/1.1646434
Chia, C. K., David, J. P. R., Rees, G. J., Robson, P. N., Plimmer, S. A., Grey, R. (1997) Electron multiplication in AlxGa1−xAs/GaAs heterostructures. Applied Physics Letters, 71 (26). 3877-3879 doi:10.1063/1.120531
 
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