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Takamura, Y., Jain, S. H., Griffin, P. B., Plummer, J. D. (2002) Thermal stability of dopants in laser annealed silicon. Journal of Applied Physics, 92 (1). 230-234 doi:10.1063/1.1481975

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Reference TypeJournal (article/letter/editorial)
TitleThermal stability of dopants in laser annealed silicon
JournalJournal of Applied Physics
AuthorsTakamura, Y.Author
Jain, S. H.Author
Griffin, P. B.Author
Plummer, J. D.Author
Year2002 (July)Volume92
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.1481975Search in ResearchGate
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Mindat Ref. ID5115055Long-form Identifiermindat:1:5:5115055:0
GUID0
Full ReferenceTakamura, Y., Jain, S. H., Griffin, P. B., Plummer, J. D. (2002) Thermal stability of dopants in laser annealed silicon. Journal of Applied Physics, 92 (1). 230-234 doi:10.1063/1.1481975
Plain TextTakamura, Y., Jain, S. H., Griffin, P. B., Plummer, J. D. (2002) Thermal stability of dopants in laser annealed silicon. Journal of Applied Physics, 92 (1). 230-234 doi:10.1063/1.1481975
In(2002, July) Journal of Applied Physics Vol. 92 (1) AIP Publishing

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Takamura, Y., Griffin, P. B., Plummer, J. D. (2002) Physical processes associated with the deactivation of dopants in laser annealed silicon. Journal of Applied Physics, 92 (1). 235-244 doi:10.1063/1.1481974
Jain, S. H., Griffin, P. B., Plummer, J. D. (2003) Hall measurements of bilayer structures. Journal of Applied Physics, 93 (2). 1060-1063 doi:10.1063/1.1529093
Takamura, Y., Marshall, A. F., Mehta, A., Arthur, J., Griffin, P. B., Plummer, J. D., Patel, J. R. (2004) Diffuse x-ray scattering and transmission electron microscopy study of defects in antimony-implanted silicon. Journal of Applied Physics, 95 (8). 3968-3976 doi:10.1063/1.1666975
Wilson, S. R., Paulson, W. M., Gregory, R. B., Tam, G., White, C. W., Appleton, B. R., Rai, A. K., Pronko, P. P. (1983) Thermal stability of electrically active dopants in laser annealed silicon films. Journal of Applied Physics, 54 (9). 5004-5013 doi:10.1063/1.332768
Jain, S. H., Griffin, P. B., Plummer, J. D., Mccoy, S., Gelpey, J., Selinger, T., Downey, D. F. (2004) Metastable boron active concentrations in Si using flash assisted solid phase epitaxy. Journal of Applied Physics, 96 (12). 7357-7360 doi:10.1063/1.1814792
Ural, Ant, Griffin, Peter B., Plummer, James D. (1999) Fractional contributions of microscopic diffusion mechanisms for common dopants and self-diffusion in silicon. Journal of Applied Physics, 85 (9). 6440-6446 doi:10.1063/1.370285
Takamura, Yayoi, Vailionis, Arturas, Marshall, Ann F., Griffin, Peter B., Plummer, James D. (2002) Dopant deactivation in heavily Sb doped Si (001): A high-resolution x-ray diffraction and transmission electron microscopy study. Journal of Applied Physics, 92 (9). 5503-5507 doi:10.1063/1.1510953
Chao, H. S., Griffin, P. B., Plummer, J. D. (1996) Influence of dislocation loops created by amorphizing implants on point defect and boron diffusion in silicon. Applied Physics Letters, 68 (25). 3570-3572 doi:10.1063/1.116640
Ahn, S. T., Griffin, P. B., Shott, J. D., Plummer, J. D., Tiller, W. A. (1987) A study of silicon interstitial kinetics using silicon membranes: Applications to 2D dopant diffusion. Journal of Applied Physics, 62 (12). 4745-4755 doi:10.1063/1.339028
Griffin, P. B., Fahey, P. M., Plummer, J. D., Dutton, R. W. (1985) Measurement of silicon interstitial diffusivity. Applied Physics Letters, 47 (3). 319-321 doi:10.1063/1.96205
Ural, Ant, Griffin, P. B., Plummer, J. D. (2001) Silicon self-diffusion under extrinsic conditions. Applied Physics Letters, 79 (26). 4328-4330 doi:10.1063/1.1425953
 
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