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Aronzon, B., Lagutin, A., Rylkov, V., Pankov, M., Lashkul, A., Laiho, R. (2008) Disorder effects in GaAs/InxGa1-xAs/GaAs quantum well delta doped with Mn. physica status solidi (c), 5 (3). 814-818 doi:10.1002/pssc.200777552

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Reference TypeJournal (article/letter/editorial)
TitleDisorder effects in GaAs/InxGa1-xAs/GaAs quantum well delta doped with Mn
Journalphysica status solidi (c)
AuthorsAronzon, B.Author
Lagutin, A.Author
Rylkov, V.Author
Pankov, M.Author
Lashkul, A.Author
Laiho, R.Author
Year2008 (March)Volume5
Issue3
PublisherWiley
DOIdoi:10.1002/pssc.200777552Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5115621Long-form Identifiermindat:1:5:5115621:7
GUID0
Full ReferenceAronzon, B., Lagutin, A., Rylkov, V., Pankov, M., Lashkul, A., Laiho, R. (2008) Disorder effects in GaAs/InxGa1-xAs/GaAs quantum well delta doped with Mn. physica status solidi (c), 5 (3). 814-818 doi:10.1002/pssc.200777552
Plain TextAronzon, B., Lagutin, A., Rylkov, V., Pankov, M., Lashkul, A., Laiho, R. (2008) Disorder effects in GaAs/InxGa1-xAs/GaAs quantum well delta doped with Mn. physica status solidi (c), 5 (3). 814-818 doi:10.1002/pssc.200777552
In(2008, March) physica status solidi (c) Vol. 5 (3) Wiley

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Aronzon, B A, Kovalchuk, M V, Pashaev, E M, Chuev, M A, Kvardakov, V V, Subbotin, I A, Rylkov, V V, Pankov, M A, Likhachev, I A, Zvonkov, B N, Danilov, Yu A, Vihrova, O V, Lashkul, A V, Laiho, R (2008) Structural and transport properties of GaAs/δ-Mn/GaAs/InxGa1−xAs/GaAs quantum wells. Journal of Physics: Condensed Matter, 20 (14). 145207pp. doi:10.1088/0953-8984/20/14/145207
Pankov, M. A., Aronzon, B. A., Rylkov, V. V., Davydov, A. B., Meĭlikhov, E. Z., Farzetdinova, R. M., Pashaev, É. M., Chuev, M. A., Subbotin, I. A., Likhachev, I. A., Zvonkov, B. N., Lashkul, A. V., Laiho, R. (2009) Ferromagnetic transition in GaAs/Mn/GaAs/In x Ga1 − x As/GaAs structures with a two-dimensional hole gas. Journal of Experimental and Theoretical Physics, 109 (2). 293-301 doi:10.1134/s1063776109080159
Pankov, M. A., Aronzon, B. A., Rylkov, V. V., Davydov, A. B., Tugushev, V. V., Caprara, S., Likhachev, I. A., Pashaev, E. M., Chuev, M. A., Lähderanta, E., Vedeneev, A. S., Bugaev, A. S. (2012) Pecularities of Hall effect in GaAs/δ〈Mn〉/GaAs/InxGa1−xAs/ GaAs (x ≈ 0.2) heterostructures with high Mn content. The European Physical Journal B, 85 (6). doi:10.1140/epjb/e2012-30149-4
Aronzon, B, Davydov, A, Goiran, M, Raquet, B, Lashkul, A, Lahderanta, E (2013) Quantum, normal and anomalous Hall effect in 2D ferromagnetic structures: GaAs/InGaAs/GaAs quantum well with remote Mn delta-layer. Journal of Physics: Conference Series, 456. 12001pp. doi:10.1088/1742-6596/456/1/012001
Kulbachinskii, V.A., Lunin, R.A., Gurin, P.V., Aronzon, B.A., Davydov, A.B., Rylkov, V.V., Danilov, Yu.A., Vikhrova, O.V., Zvonkov, B.N. (2006) Transport and magnetotransport properties of Mn-doped InxGa1−xAs/GaAs quantum well structures. Journal of Magnetism and Magnetic Materials, 300. doi:10.1016/j.jmmm.2005.10.139
Kulbachinskii, V A, Gurin, P V, Vikhrova, Ov, Danilov, Y A, Zvonkov, B N (2008) Ferromagnetism and magnetotransport in GaAs structures with InAs quantum dot layer or InxGa1-xAs quantum well delta-doped with Mn and C. Journal of Physics: Conference Series, 100. 42025pp. doi:10.1088/1742-6596/100/4/042025
Nathan, V. (1994) Thermionic dark Current in GaAs/AlxGa1-xAs Quantum Well Detectors. physica status solidi (b), 185 (2). doi:10.1002/pssb.2221850227
Nathan, V. (1994) Tunneling dark current in GaAs/AlxGa1−xAs quantum well detectors. physica status solidi (a), 144 (1). doi:10.1002/pssa.2211440134
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Hrivnák, ??. (1991) Conduction-Band Discontinuities of Strained- and Unstrained-Layer InxGa1−xAs/GaAs and InxGa1−xAs/InP Heterojunctions and Quantum Wells. physica status solidi (a), 124 (2). doi:10.1002/pssa.2211240233
Aronzon, B. A., Pankov, M. A., Rylkov, V. V., Meilikhov, E. Z., Lagutin, A. S., Pashaev, E. M., Chuev, M. A., Kvardakov, V. V., Likhachev, I. A., Vihrova, O. V., Lashkul, A. V., Lähderanta, E., Vedeneev, A. S., Kervalishvili, P. (2010) Ferromagnetism of low-dimensional Mn-doped III-V semiconductor structures in the vicinity of the insulator-metal transition. Journal of Applied Physics, 107 (2). 23905pp. doi:10.1063/1.3267314
 
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