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Aronzon, B A, Kovalchuk, M V, Pashaev, E M, Chuev, M A, Kvardakov, V V, Subbotin, I A, Rylkov, V V, Pankov, M A, Likhachev, I A, Zvonkov, B N, Danilov, Yu A, Vihrova, O V, Lashkul, A V, Laiho, R (2008) Structural and transport properties of GaAs/δ-Mn/GaAs/InxGa1−xAs/GaAs quantum wells. Journal of Physics: Condensed Matter, 20 (14). 145207pp. doi:10.1088/0953-8984/20/14/145207

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Reference TypeJournal (article/letter/editorial)
TitleStructural and transport properties of GaAs/δ-Mn/GaAs/InxGa1−xAs/GaAs quantum wells
JournalJournal of Physics: Condensed Matter
AuthorsAronzon, B AAuthor
Kovalchuk, M VAuthor
Pashaev, E MAuthor
Chuev, M AAuthor
Kvardakov, V VAuthor
Subbotin, I AAuthor
Rylkov, V VAuthor
Pankov, M AAuthor
Likhachev, I AAuthor
Zvonkov, B NAuthor
Danilov, Yu AAuthor
Vihrova, O VAuthor
Lashkul, A VAuthor
Laiho, RAuthor
Year2008 (April 9)Volume20
Issue14
PublisherIOP Publishing
DOIdoi:10.1088/0953-8984/20/14/145207Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8708245Long-form Identifiermindat:1:5:8708245:2
GUID0
Full ReferenceAronzon, B A, Kovalchuk, M V, Pashaev, E M, Chuev, M A, Kvardakov, V V, Subbotin, I A, Rylkov, V V, Pankov, M A, Likhachev, I A, Zvonkov, B N, Danilov, Yu A, Vihrova, O V, Lashkul, A V, Laiho, R (2008) Structural and transport properties of GaAs/δ-Mn/GaAs/InxGa1−xAs/GaAs quantum wells. Journal of Physics: Condensed Matter, 20 (14). 145207pp. doi:10.1088/0953-8984/20/14/145207
Plain TextAronzon, B A, Kovalchuk, M V, Pashaev, E M, Chuev, M A, Kvardakov, V V, Subbotin, I A, Rylkov, V V, Pankov, M A, Likhachev, I A, Zvonkov, B N, Danilov, Yu A, Vihrova, O V, Lashkul, A V, Laiho, R (2008) Structural and transport properties of GaAs/δ-Mn/GaAs/InxGa1−xAs/GaAs quantum wells. Journal of Physics: Condensed Matter, 20 (14). 145207pp. doi:10.1088/0953-8984/20/14/145207
In(2008, April) Journal of Physics: Condensed Matter Vol. 20 (14) IOP Publishing

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Pankov, M. A., Aronzon, B. A., Rylkov, V. V., Davydov, A. B., Meĭlikhov, E. Z., Farzetdinova, R. M., Pashaev, É. M., Chuev, M. A., Subbotin, I. A., Likhachev, I. A., Zvonkov, B. N., Lashkul, A. V., Laiho, R. (2009) Ferromagnetic transition in GaAs/Mn/GaAs/In x Ga1 − x As/GaAs structures with a two-dimensional hole gas. Journal of Experimental and Theoretical Physics, 109 (2). 293-301 doi:10.1134/s1063776109080159
Pankov, M. A., Aronzon, B. A., Rylkov, V. V., Davydov, A. B., Tugushev, V. V., Caprara, S., Likhachev, I. A., Pashaev, E. M., Chuev, M. A., Lähderanta, E., Vedeneev, A. S., Bugaev, A. S. (2012) Pecularities of Hall effect in GaAs/δ〈Mn〉/GaAs/InxGa1−xAs/ GaAs (x ≈ 0.2) heterostructures with high Mn content. The European Physical Journal B, 85 (6). doi:10.1140/epjb/e2012-30149-4
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Aronzon, B., Lagutin, A., Rylkov, V., Pankov, M., Lashkul, A., Laiho, R. (2008) Disorder effects in GaAs/InxGa1-xAs/GaAs quantum well delta doped with Mn. physica status solidi (c), 5 (3). 814-818 doi:10.1002/pssc.200777552
Aronzon, B. A., Granovsky, A. B., Davydov, A. B., Danilov, Yu. A., Zvonkov, B. N., Ryl’kov, V. V., Uskova, E. A. (2007) Properties of InGaAs/GaAs quantum wells with a δ〈Mn〉-doped layer in GaAs. Physics of the Solid State, 49. 171-177 doi:10.1134/s1063783407010271
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