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Albo, Asaf, Fekete, Dan, Bahir, Gad (2008) Unpolarized intersubband photocurrent in Te doped GaInAsN/GaAlAs quantum well IR photodetector. physica status solidi (c), 5 (6). 2323-2325 doi:10.1002/pssc.200778741

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Reference TypeJournal (article/letter/editorial)
TitleUnpolarized intersubband photocurrent in Te doped GaInAsN/GaAlAs quantum well IR photodetector
Journalphysica status solidi (c)
AuthorsAlbo, AsafAuthor
Fekete, DanAuthor
Bahir, GadAuthor
Year2008 (May)Volume5
Issue6
PublisherWiley
DOIdoi:10.1002/pssc.200778741Search in ResearchGate
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Mindat Ref. ID5116535Long-form Identifiermindat:1:5:5116535:8
GUID0
Full ReferenceAlbo, Asaf, Fekete, Dan, Bahir, Gad (2008) Unpolarized intersubband photocurrent in Te doped GaInAsN/GaAlAs quantum well IR photodetector. physica status solidi (c), 5 (6). 2323-2325 doi:10.1002/pssc.200778741
Plain TextAlbo, Asaf, Fekete, Dan, Bahir, Gad (2008) Unpolarized intersubband photocurrent in Te doped GaInAsN/GaAlAs quantum well IR photodetector. physica status solidi (c), 5 (6). 2323-2325 doi:10.1002/pssc.200778741
In(2008, May) physica status solidi (c) Vol. 5 (6) Wiley

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Albo, Asaf, Fekete, Dan, Bahir, Gad (2012) Photocurrent spectroscopy of intersubband transitions in GaInAsN/(Al)GaAs asymmetric quantum well infrared photodetectors. Journal of Applied Physics, 112 (8). 84502pp. doi:10.1063/1.4754573
Albo, Asaf, Vardi, Alon, Fekete, Dan, Bahir, Gad (2009) Polarization-independent intersubband based GaInAsN quantum-well photodetector with dominant detection at 1.42 μm. Applied Physics Letters, 94 (9). 93503pp. doi:10.1063/1.3089868
Albo, Asaf, Bahir, Gad, Fekete, Dan (2010) Improved hole confinement in GaInAsN–GaAsSbN thin double-layer quantum-well structure for telecom-wavelength lasers. Journal of Applied Physics, 108 (9). 93116pp. doi:10.1063/1.3503435
Albo, Asaf, Cytermann, Catherine, Bahir, Gad, Fekete, Dan (2010) Utilizing the interface adsorption of nitrogen for the growth of high-quality GaInAsN/GaAs quantum wells by metal organic chemical vapor deposition for near infrared applications. Applied Physics Letters, 96 (14). 141102pp. doi:10.1063/1.3360216
Albo, Asaf, Fekete, Dan, Bahir, Gad (2012) Electronic bound states in the continuum above (Ga,In)(As,N)/(Al,Ga)As quantum wells. Physical Review B, 85 (11) doi:10.1103/physrevb.85.115307
Albo, Asaf, Cytermann, Catherine, Bahir, Gad, Fekete, Dan (2009) Strain-induced nitrogen incorporation in atomic layer epitaxy growth of InAsN/GaAs quantum wells using metal organic chemical vapor deposition. Applied Physics Letters, 95 (5). 51102pp. doi:10.1063/1.3193663
Wei, X. F., Xu, W., Zeng, Z., Zhang, C. (2007) Photocurrent induced by intersubband transition in a type II and broken-gap quantum well system. physica status solidi (c), 4 (2). 544-546 doi:10.1002/pssc.200673347
Miura, M., Katayama, S. (2008) Analysis of hot electron effects on intersubband Raman laser in modulation-doped GaAs/AlGaAs coupled double quantum wells. physica status solidi (c), 5 (1). 265-268 doi:10.1002/pssc.200776595
Oliver, R. A., Kappers, M. J., Humphreys, C. J. (2008) Gross well-width fluctuations in InGaN quantum wells. physica status solidi (c), 5 (6). 1475-1481 doi:10.1002/pssc.200778557
Feng, Shih-Wei, Chen, Kuei-Hsien, Lai, Chih-Ming (2008) Quantum-size effect and intersubband transitions in zinc blend AlxGa1–xN quantum cubes embedded in AlN matrix. physica status solidi (c), 5 (6). 2336-2338 doi:10.1002/pssc.200778456
Nevou, L., Julien, F. H., Tchernycheva, M., Guillot, F., Sarigiannidou, E., Monroy, E. (2008) Near-infrared intersubband emission from GaN/AlN quantum dots and quantum wells. physica status solidi (c), 5 (6). 2120-2122 doi:10.1002/pssc.200778469
 
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