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Albo, Asaf, Cytermann, Catherine, Bahir, Gad, Fekete, Dan (2010) Utilizing the interface adsorption of nitrogen for the growth of high-quality GaInAsN/GaAs quantum wells by metal organic chemical vapor deposition for near infrared applications. Applied Physics Letters, 96 (14). 141102pp. doi:10.1063/1.3360216

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Reference TypeJournal (article/letter/editorial)
TitleUtilizing the interface adsorption of nitrogen for the growth of high-quality GaInAsN/GaAs quantum wells by metal organic chemical vapor deposition for near infrared applications
JournalApplied Physics Letters
AuthorsAlbo, AsafAuthor
Cytermann, CatherineAuthor
Bahir, GadAuthor
Fekete, DanAuthor
Year2010 (April 5)Volume96
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.3360216Search in ResearchGate
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Mindat Ref. ID8582511Long-form Identifiermindat:1:5:8582511:8
GUID0
Full ReferenceAlbo, Asaf, Cytermann, Catherine, Bahir, Gad, Fekete, Dan (2010) Utilizing the interface adsorption of nitrogen for the growth of high-quality GaInAsN/GaAs quantum wells by metal organic chemical vapor deposition for near infrared applications. Applied Physics Letters, 96 (14). 141102pp. doi:10.1063/1.3360216
Plain TextAlbo, Asaf, Cytermann, Catherine, Bahir, Gad, Fekete, Dan (2010) Utilizing the interface adsorption of nitrogen for the growth of high-quality GaInAsN/GaAs quantum wells by metal organic chemical vapor deposition for near infrared applications. Applied Physics Letters, 96 (14). 141102pp. doi:10.1063/1.3360216
In(2010, April) Applied Physics Letters Vol. 96 (14) AIP Publishing

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Albo, Asaf, Cytermann, Catherine, Bahir, Gad, Fekete, Dan (2009) Strain-induced nitrogen incorporation in atomic layer epitaxy growth of InAsN/GaAs quantum wells using metal organic chemical vapor deposition. Applied Physics Letters, 95 (5). 51102pp. doi:10.1063/1.3193663
Albo, Asaf, Fekete, Dan, Bahir, Gad (2012) Photocurrent spectroscopy of intersubband transitions in GaInAsN/(Al)GaAs asymmetric quantum well infrared photodetectors. Journal of Applied Physics, 112 (8). 84502pp. doi:10.1063/1.4754573
Albo, Asaf, Bahir, Gad, Fekete, Dan (2010) Improved hole confinement in GaInAsN–GaAsSbN thin double-layer quantum-well structure for telecom-wavelength lasers. Journal of Applied Physics, 108 (9). 93116pp. doi:10.1063/1.3503435
Albo, Asaf, Vardi, Alon, Fekete, Dan, Bahir, Gad (2009) Polarization-independent intersubband based GaInAsN quantum-well photodetector with dominant detection at 1.42 μm. Applied Physics Letters, 94 (9). 93503pp. doi:10.1063/1.3089868
Albo, Asaf, Fekete, Dan, Bahir, Gad (2008) Unpolarized intersubband photocurrent in Te doped GaInAsN/GaAlAs quantum well IR photodetector. physica status solidi (c), 5 (6). 2323-2325 doi:10.1002/pssc.200778741
Albo, Asaf, Fekete, Dan, Bahir, Gad (2012) Electronic bound states in the continuum above (Ga,In)(As,N)/(Al,Ga)As quantum wells. Physical Review B, 85 (11) doi:10.1103/physrevb.85.115307
Fekete, D., Carron, R., Gallo, P., Dwir, B., Rudra, A., Kapon, E. (2011) High-quality 1.3 μm-wavelength GaInAsN/GaAs quantum wells grown by metalorganic vapor phase epitaxy on vicinal substrates. Applied Physics Letters, 99 (7). 72116pp. doi:10.1063/1.3623478
Bhat, R, Caneau, C, Salamanca-Riba, Lourdes, Bi, W, Tu, C (1998) Growth of GaAsN/GaAs, GaInAsN/GaAs and GaInAsN/GaAs quantum wells by low-pressure organometallic chemical vapor deposition. Journal of Crystal Growth, 195 (1). 427-437 doi:10.1016/s0022-0248(98)00574-0
Miller, R. C., Dupuis, R. D., Petroff, P. M. (1984) High‐quality single GaAs quantum wells grown by metalorganic chemical vapor deposition. Applied Physics Letters, 44 (5). 508-510 doi:10.1063/1.94814
Bayram, C., Péré-laperne, N., McClintock, R., Fain, B., Razeghi, M. (2009) Pulsed metal-organic chemical vapor deposition of high-quality AlN/GaN superlattices for near-infrared intersubband transitions. Applied Physics Letters, 94 (12). 121902pp. doi:10.1063/1.3104857
Chen, Z. T., Sakai, Y., Egawa, T. (2010) Photoluminescence studies of high-quality InAlN layer lattice-matched to GaN grown by metal organic chemical vapor deposition. Applied Physics Letters, 96 (19). 191911pp. doi:10.1063/1.3430737
 
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