Chen, Z. T., Sakai, Y., Egawa, T. (2010) Photoluminescence studies of high-quality InAlN layer lattice-matched to GaN grown by metal organic chemical vapor deposition. Applied Physics Letters, 96 (19). 191911pp. doi:10.1063/1.3430737
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Photoluminescence studies of high-quality InAlN layer lattice-matched to GaN grown by metal organic chemical vapor deposition | ||
| Journal | Applied Physics Letters | ||
| Authors | Chen, Z. T. | Author | |
| Sakai, Y. | Author | ||
| Egawa, T. | Author | ||
| Year | 2010 (May 10) | Volume | 96 |
| Issue | 19 | ||
| Publisher | AIP Publishing | ||
| DOI | doi:10.1063/1.3430737Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 8583460 | Long-form Identifier | mindat:1:5:8583460:2 |
| GUID | 0 | ||
| Full Reference | Chen, Z. T., Sakai, Y., Egawa, T. (2010) Photoluminescence studies of high-quality InAlN layer lattice-matched to GaN grown by metal organic chemical vapor deposition. Applied Physics Letters, 96 (19). 191911pp. doi:10.1063/1.3430737 | ||
| Plain Text | Chen, Z. T., Sakai, Y., Egawa, T. (2010) Photoluminescence studies of high-quality InAlN layer lattice-matched to GaN grown by metal organic chemical vapor deposition. Applied Physics Letters, 96 (19). 191911pp. doi:10.1063/1.3430737 | ||
| In | (2010, May) Applied Physics Letters Vol. 96 (19) AIP Publishing | ||
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