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Bayram, C., Vashaei, Z., Razeghi, M. (2010) AlN/GaN double-barrier resonant tunneling diodes grown by metal-organic chemical vapor deposition. Applied Physics Letters, 96 (4). 42103pp. doi:10.1063/1.3294633

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Reference TypeJournal (article/letter/editorial)
TitleAlN/GaN double-barrier resonant tunneling diodes grown by metal-organic chemical vapor deposition
JournalApplied Physics Letters
AuthorsBayram, C.Author
Vashaei, Z.Author
Razeghi, M.Author
Year2010 (January 25)Volume96
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.3294633Search in ResearchGate
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Mindat Ref. ID8585062Long-form Identifiermindat:1:5:8585062:8
GUID0
Full ReferenceBayram, C., Vashaei, Z., Razeghi, M. (2010) AlN/GaN double-barrier resonant tunneling diodes grown by metal-organic chemical vapor deposition. Applied Physics Letters, 96 (4). 42103pp. doi:10.1063/1.3294633
Plain TextBayram, C., Vashaei, Z., Razeghi, M. (2010) AlN/GaN double-barrier resonant tunneling diodes grown by metal-organic chemical vapor deposition. Applied Physics Letters, 96 (4). 42103pp. doi:10.1063/1.3294633
In(2010, January) Applied Physics Letters Vol. 96 (4) AIP Publishing

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Bayram, C., Vashaei, Z., Razeghi, M. (2010) Reliability in room-temperature negative differential resistance characteristics of low-aluminum content AlGaN/GaN double-barrier resonant tunneling diodes. Applied Physics Letters, 97 (18). 181109pp. doi:10.1063/1.3515418
Vashaei, Z., Bayram, C., Razeghi, M. (2010) Demonstration of negative differential resistance in GaN/AlN resonant tunneling diodes at room temperature. Journal of Applied Physics, 107 (8). 83505pp. doi:10.1063/1.3372763
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Vashaei, Z., Cicek, E., Bayram, C., McClintock, R., Razeghi, M. (2010) GaN avalanche photodiodes grown on m-plane freestanding GaN substrate. Applied Physics Letters, 96 (20). 201908pp. doi:10.1063/1.3432408
Bayram, C., Péré-laperne, N., Razeghi, M. (2009) Effects of well width and growth temperature on optical and structural characteristics of AlN/GaN superlattices grown by metal-organic chemical vapor deposition. Applied Physics Letters, 95 (20). 201906pp. doi:10.1063/1.3267101
Cicek, E., Vashaei, Z., McClintock, R., Bayram, C., Razeghi, M. (2010) Geiger-mode operation of ultraviolet avalanche photodiodes grown on sapphire and free-standing GaN substrates. Applied Physics Letters, 96 (26). 261107pp. doi:10.1063/1.3457783
Vashaei, Z., Bayram, C., Lavenus, P., Razeghi, M. (2010) Photoluminescence characteristics of polar and nonpolar AlGaN/GaN superlattices. Applied Physics Letters, 97 (12). 121918pp. doi:10.1063/1.3493185
Bayram, C., Péré-laperne, N., McClintock, R., Fain, B., Razeghi, M. (2009) Pulsed metal-organic chemical vapor deposition of high-quality AlN/GaN superlattices for near-infrared intersubband transitions. Applied Physics Letters, 94 (12). 121902pp. doi:10.1063/1.3104857
Kikuchi, Akihiko, Bannai, Ryo, Kishino, Katsumi, Lee, Chia-Ming, Chyi, Jen-Inn (2002) AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy. Applied Physics Letters, 81 (9). 1729-1731 doi:10.1063/1.1501157
Xue, JunShuai, Zhang, JinCheng, Hao, Yue (2015) Ultrathin barrier AlN/GaN high electron mobility transistors grown at a dramatically reduced growth temperature by pulsed metal organic chemical vapor deposition. Applied Physics Letters, 107 (4). 43503pp. doi:10.1063/1.4927743
Chen, Z. T., Sakai, Y., Egawa, T. (2010) Photoluminescence studies of high-quality InAlN layer lattice-matched to GaN grown by metal organic chemical vapor deposition. Applied Physics Letters, 96 (19). 191911pp. doi:10.1063/1.3430737
 
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