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Vashaei, Z., Cicek, E., Bayram, C., McClintock, R., Razeghi, M. (2010) GaN avalanche photodiodes grown on m-plane freestanding GaN substrate. Applied Physics Letters, 96 (20). 201908pp. doi:10.1063/1.3432408

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Reference TypeJournal (article/letter/editorial)
TitleGaN avalanche photodiodes grown on m-plane freestanding GaN substrate
JournalApplied Physics Letters
AuthorsVashaei, Z.Author
Cicek, E.Author
Bayram, C.Author
McClintock, R.Author
Razeghi, M.Author
Year2010 (May 17)Volume96
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.3432408Search in ResearchGate
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Mindat Ref. ID8583746Long-form Identifiermindat:1:5:8583746:9
GUID0
Full ReferenceVashaei, Z., Cicek, E., Bayram, C., McClintock, R., Razeghi, M. (2010) GaN avalanche photodiodes grown on m-plane freestanding GaN substrate. Applied Physics Letters, 96 (20). 201908pp. doi:10.1063/1.3432408
Plain TextVashaei, Z., Cicek, E., Bayram, C., McClintock, R., Razeghi, M. (2010) GaN avalanche photodiodes grown on m-plane freestanding GaN substrate. Applied Physics Letters, 96 (20). 201908pp. doi:10.1063/1.3432408
In(2010, May) Applied Physics Letters Vol. 96 (20) AIP Publishing

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Cicek, E., Vashaei, Z., McClintock, R., Bayram, C., Razeghi, M. (2010) Geiger-mode operation of ultraviolet avalanche photodiodes grown on sapphire and free-standing GaN substrates. Applied Physics Letters, 96 (26). 261107pp. doi:10.1063/1.3457783
Bayram, C., Vashaei, Z., Razeghi, M. (2010) AlN/GaN double-barrier resonant tunneling diodes grown by metal-organic chemical vapor deposition. Applied Physics Letters, 96 (4). 42103pp. doi:10.1063/1.3294633
Pau, J. L., Bayram, C., McClintock, R., Razeghi, M., Silversmith, D. (2008) Back-illuminated separate absorption and multiplication GaN avalanche photodiodes. Applied Physics Letters, 92 (10). 101120pp. doi:10.1063/1.2897039
Bayram, C., Pau, J. L., McClintock, R., Razeghi, M., Ulmer, M. P., Silversmith, D. (2008) High quantum efficiency back-illuminated GaN avalanche photodiodes. Applied Physics Letters, 93 (21). 211107pp. doi:10.1063/1.3039061
Bayram, C., Pau, J. L., McClintock, R., Razeghi, M. (2008) Performance enhancement of GaN ultraviolet avalanche photodiodes with p-type δ-doping. Applied Physics Letters, 92 (24). 241103pp. doi:10.1063/1.2948857
McClintock, R., Pau, J. L., Minder, K., Bayram, C., Kung, P., Razeghi, M. (2007) Hole-initiated multiplication in back-illuminated GaN avalanche photodiodes. Applied Physics Letters, 90 (14). 141112pp. doi:10.1063/1.2720712
Minder, K., Pau, J. L., McClintock, R., Kung, P., Bayram, C., Razeghi, M., Silversmith, D. (2007) Scaling in back-illuminated GaN avalanche photodiodes. Applied Physics Letters, 91 (7). 73513pp. doi:10.1063/1.2772199
Pau, J. L., McClintock, R., Minder, K., Bayram, C., Kung, P., Razeghi, M., Muñoz, E., Silversmith, D. (2007) Geiger-mode operation of back-illuminated GaN avalanche photodiodes. Applied Physics Letters, 91 (4). 41104pp. doi:10.1063/1.2759980
Vashaei, Z., Bayram, C., Lavenus, P., Razeghi, M. (2010) Photoluminescence characteristics of polar and nonpolar AlGaN/GaN superlattices. Applied Physics Letters, 97 (12). 121918pp. doi:10.1063/1.3493185
Pau, J. L., Bayram, C., Giedraitis, P., McClintock, R., Razeghi, M. (2008) GaN nanostructured p-i-n photodiodes. Applied Physics Letters, 93 (22). 221104pp. doi:10.1063/1.3041641
Cicek, E., McClintock, R., Vashaei, Z., Zhang, Y., Gautier, S., Cho, C. Y., Razeghi, M. (2013) Crack-free AlGaN for solar-blind focal plane arrays through reduced area epitaxy. Applied Physics Letters, 102 (5). 51102pp. doi:10.1063/1.4790839
 
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