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Lee, S. J., Jeon, T. S., Kwong, D. L., Clark, R. (2002) Hafnium oxide gate stack prepared by in situ rapid thermal chemical vapor deposition process for advanced gate dielectrics. Journal of Applied Physics, 92 (5). 2807-2809 doi:10.1063/1.1500420

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Reference TypeJournal (article/letter/editorial)
TitleHafnium oxide gate stack prepared by in situ rapid thermal chemical vapor deposition process for advanced gate dielectrics
JournalJournal of Applied Physics
AuthorsLee, S. J.Author
Jeon, T. S.Author
Kwong, D. L.Author
Clark, R.Author
Year2002 (September)Volume92
Issue5
PublisherAIP Publishing
DOIdoi:10.1063/1.1500420Search in ResearchGate
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Mindat Ref. ID5116585Long-form Identifiermindat:1:5:5116585:3
GUID0
Full ReferenceLee, S. J., Jeon, T. S., Kwong, D. L., Clark, R. (2002) Hafnium oxide gate stack prepared by in situ rapid thermal chemical vapor deposition process for advanced gate dielectrics. Journal of Applied Physics, 92 (5). 2807-2809 doi:10.1063/1.1500420
Plain TextLee, S. J., Jeon, T. S., Kwong, D. L., Clark, R. (2002) Hafnium oxide gate stack prepared by in situ rapid thermal chemical vapor deposition process for advanced gate dielectrics. Journal of Applied Physics, 92 (5). 2807-2809 doi:10.1063/1.1500420
In(2002, September) Journal of Applied Physics Vol. 92 (5) AIP Publishing

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Yan, J., Han, L. K., Kwong, D. L. (1996) Highly reliable chemical vapor deposited stacked oxynitride gate dielectrics fabricated by in situ rapid thermal multiprocessing. Applied Physics Letters, 68 (19). 2666-2668 doi:10.1063/1.116275
Jeon, T. S., White, J. M., Kwong, D. L. (2001) Thermal stability of ultrathin ZrO2 films prepared by chemical vapor deposition on Si(100). Applied Physics Letters, 78 (3). 368-370 doi:10.1063/1.1339994
Ahn, J., Ting, W., Chu, T., Lin, S., Kwong, D. L. (1991) High quality thin gate oxide prepared by annealing low‐pressure chemical vapor deposited SiO2in N2O. Applied Physics Letters, 59 (3). 283-285 doi:10.1063/1.105622
Gao, Fei, Lee, S. J., Chi, D. Z., Balakumar, S., Kwong, D.-L. (2007) GaAs metal-oxide-semiconductor device with HfO2∕TaN gate stack and thermal nitridation surface passivation. Applied Physics Letters, 90 (25). 252904pp. doi:10.1063/1.2749840
Lo, G. Q., Ting, W. C., Shih, D. K., Kwong, D. L. (1990) Charge trapping properties in thin oxynitride gate dielectrics prepared by rapid thermal processing. Applied Physics Letters, 56 (10). 979-981 doi:10.1063/1.103273
Hegde, R. I., Triyoso, D. H., Samavedam, S. B., White, B. E. (2007) Hafnium zirconate gate dielectric for advanced gate stack applications. Journal of Applied Physics, 101 (7). 74113pp. doi:10.1063/1.2716399
Lee, Sungjoo, Kwong, Dim-Lee (2004) Reliability Characteristics of poly Si-gated High Quality Chemical Vapor Deposition Hafnium Oxide Gate Dielectric. Japanese Journal of Applied Physics, 43 (2) 427-431 doi:10.1143/jjap.43.427
Gao, Fei, Lee, S. J., Pan, J. S., Tang, L. J., Kwong, Dim-Lee (2005) Surface passivation using ultrathin AlNx film for Ge–metal–oxide–semiconductor devices with hafnium oxide gate dielectric. Applied Physics Letters, 86 (11). 113501pp. doi:10.1063/1.1875733
Potter, R. J., Marshall, P. A., Chalker, P. R., Taylor, S., Jones, A. C., Noakes, T. C. Q., Bailey, P. (2004) Characterization of hafnium aluminate gate dielectrics deposited by liquid injection metalorganic chemical vapor deposition. Applied Physics Letters, 84 (20). 4119-4121 doi:10.1063/1.1755424
Lee, S. K., Ku, Y. H., Kwong, D. L. (1989) Silicon epitaxial growth by rapid thermal processing chemical vapor deposition. Applied Physics Letters, 54 (18). 1775-1777 doi:10.1063/1.101288
Lee, Sungjoo, Kwong, Dim-Lee (2003) Dual Poly-Si Gate Metal Oxide Semiconductor Field Effect Transistors Fabricated with High-Quality Chemical Vapor Deposition HfO2Gate Dielectrics. Japanese Journal of Applied Physics, 42. 7256-7258 doi:10.1143/jjap.42.7256
 
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