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Gao, Fei, Lee, S. J., Chi, D. Z., Balakumar, S., Kwong, D.-L. (2007) GaAs metal-oxide-semiconductor device with HfO2∕TaN gate stack and thermal nitridation surface passivation. Applied Physics Letters, 90 (25). 252904pp. doi:10.1063/1.2749840

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Reference TypeJournal (article/letter/editorial)
TitleGaAs metal-oxide-semiconductor device with HfO2∕TaN gate stack and thermal nitridation surface passivation
JournalApplied Physics Letters
AuthorsGao, FeiAuthor
Lee, S. J.Author
Chi, D. Z.Author
Balakumar, S.Author
Kwong, D.-L.Author
Year2007 (June 18)Volume90
Issue25
PublisherAIP Publishing
DOIdoi:10.1063/1.2749840Search in ResearchGate
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Mindat Ref. ID8554673Long-form Identifiermindat:1:5:8554673:4
GUID0
Full ReferenceGao, Fei, Lee, S. J., Chi, D. Z., Balakumar, S., Kwong, D.-L. (2007) GaAs metal-oxide-semiconductor device with HfO2∕TaN gate stack and thermal nitridation surface passivation. Applied Physics Letters, 90 (25). 252904pp. doi:10.1063/1.2749840
Plain TextGao, Fei, Lee, S. J., Chi, D. Z., Balakumar, S., Kwong, D.-L. (2007) GaAs metal-oxide-semiconductor device with HfO2∕TaN gate stack and thermal nitridation surface passivation. Applied Physics Letters, 90 (25). 252904pp. doi:10.1063/1.2749840
In(2007, June) Applied Physics Letters Vol. 90 (25) AIP Publishing

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Gao, Fei, Lee, S. J., Pan, J. S., Tang, L. J., Kwong, Dim-Lee (2005) Surface passivation using ultrathin AlNx film for Ge–metal–oxide–semiconductor devices with hafnium oxide gate dielectric. Applied Physics Letters, 86 (11). 113501pp. doi:10.1063/1.1875733
Zhu, F., Koveshnikov, S., Ok, I., Kim, H. S., Zhang, M., Lee, T., Thareja, G., Yu, L., Lee, J. C., Tsai, W., Tokranov, V., Yakimov, M., Oktyabrsky, S. (2007) Depletion-mode GaAs metal-oxide-semiconductor field-effect transistor with amorphous silicon interface passivation layer and thin HfO2 gate oxide. Applied Physics Letters, 91 (4). 43507pp. doi:10.1063/1.2762295
Shahrjerdi, D., Garcia-Gutierrez, D. I., Akyol, T., Bank, S. R., Tutuc, E., Lee, J. C., Banerjee, S. K. (2007) GaAs metal-oxide-semiconductor capacitors using atomic layer deposition of HfO2 gate dielectric: Fabrication and characterization. Applied Physics Letters, 91 (19). 193503pp. doi:10.1063/1.2806190
Kim, Hyoung-Sub, Ok, Injo, Zhang, Manhong, Zhu, F., Park, S., Yum, J., Zhao, Han, Lee, Jack C. (2007) Gate oxide scaling down in HfO2–GaAs metal-oxide-semiconductor capacitor using germanium interfacial passivation layer. Applied Physics Letters, 91 (4). 42904pp. doi:10.1063/1.2762291
Lo, G. Q., Kwong, D. L., Lee, S. (1990) Anomalous capacitance‐voltage characteristics of BF2‐implanted and rapid thermal annealedp+‐polycrystalline silicon gate metal‐oxide‐semiconductor structures. Applied Physics Letters, 57 (24). 2573-2575 doi:10.1063/1.103819
He, G., Zhang, L. D., Liu, M., Sun, Z. Q. (2010) HfO2–GaAs metal-oxide-semiconductor capacitor using dimethylaluminumhydride-derived aluminum oxynitride interfacial passivation layer. Applied Physics Letters, 97 (6). 62908pp. doi:10.1063/1.3475015
Wu, Nan, Zhang, Qingchun, Zhu, Chunxiang, Chan, D. S. H., Li, M. F., Balasubramanian, N., Chin, Albert, Kwong, Dim-Lee (2004) Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectric. Applied Physics Letters, 85 (18). 4127-4129 doi:10.1063/1.1812835
Lee, S. J., Jeon, T. S., Kwong, D. L., Clark, R. (2002) Hafnium oxide gate stack prepared by in situ rapid thermal chemical vapor deposition process for advanced gate dielectrics. Journal of Applied Physics, 92 (5). 2807-2809 doi:10.1063/1.1500420
Kim, Hyoung-Sub, Ok, Injo, Zhang, Manhong, Lee, Tackhwi, Zhu, Feng, Yu, Lu, Lee, Jack C. (2006) Metal gate-HfO2 metal-oxide-semiconductor capacitors on n-GaAs substrate with silicon/germanium interfacial passivation layers. Applied Physics Letters, 89 (22). 222903pp. doi:10.1063/1.2396912
Koveshnikov, S., Tsai, W., Ok, I., Lee, J. C., Torkanov, V., Yakimov, M., Oktyabrsky, S. (2006) Metal-oxide-semiconductor capacitors on GaAs with high-k gate oxide and amorphous silicon interface passivation layer. Applied Physics Letters, 88 (2). 22106pp. doi:10.1063/1.2164327
Shih, D. K., Chang, W. T., Lee, S. K., Ku, Y. H., Kwong, D. L., Lee, S. (1988) Metal‐oxide‐semiconductor characteristics of rapid thermal nitrided thin oxides. Applied Physics Letters, 52 (20). 1698-1700 doi:10.1063/1.99710
 
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