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Kim, Hyoung-Sub, Ok, Injo, Zhang, Manhong, Lee, Tackhwi, Zhu, Feng, Yu, Lu, Lee, Jack C. (2006) Metal gate-HfO2 metal-oxide-semiconductor capacitors on n-GaAs substrate with silicon/germanium interfacial passivation layers. Applied Physics Letters, 89 (22). 222903pp. doi:10.1063/1.2396912

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Reference TypeJournal (article/letter/editorial)
TitleMetal gate-HfO2 metal-oxide-semiconductor capacitors on n-GaAs substrate with silicon/germanium interfacial passivation layers
JournalApplied Physics Letters
AuthorsKim, Hyoung-SubAuthor
Ok, InjoAuthor
Zhang, ManhongAuthor
Lee, TackhwiAuthor
Zhu, FengAuthor
Yu, LuAuthor
Lee, Jack C.Author
Year2006 (November 27)Volume89
Issue22
PublisherAIP Publishing
DOIdoi:10.1063/1.2396912Search in ResearchGate
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Mindat Ref. ID8551030Long-form Identifiermindat:1:5:8551030:4
GUID0
Full ReferenceKim, Hyoung-Sub, Ok, Injo, Zhang, Manhong, Lee, Tackhwi, Zhu, Feng, Yu, Lu, Lee, Jack C. (2006) Metal gate-HfO2 metal-oxide-semiconductor capacitors on n-GaAs substrate with silicon/germanium interfacial passivation layers. Applied Physics Letters, 89 (22). 222903pp. doi:10.1063/1.2396912
Plain TextKim, Hyoung-Sub, Ok, Injo, Zhang, Manhong, Lee, Tackhwi, Zhu, Feng, Yu, Lu, Lee, Jack C. (2006) Metal gate-HfO2 metal-oxide-semiconductor capacitors on n-GaAs substrate with silicon/germanium interfacial passivation layers. Applied Physics Letters, 89 (22). 222903pp. doi:10.1063/1.2396912
In(2006, November) Applied Physics Letters Vol. 89 (22) AIP Publishing

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Kim, Hyoung-Sub, Ok, Injo, Zhang, Manhong, Choi, Changhwan, Lee, Tackhwi, Zhu, Feng, Thareja, Gaurav, Yu, Lu, Lee, Jack C. (2006) Ultrathin HfO2 (equivalent oxide thickness=1.1nm) metal-oxide-semiconductor capacitors on n-GaAs substrate with germanium passivation. Applied Physics Letters, 88 (25). 252906pp. doi:10.1063/1.2216023
Kim, Hyoung-Sub, Ok, Injo, Zhang, Manhong, Lee, T., Zhu, F., Yu, L., Lee, Jack C., Koveshnikov, S., Tsai, W., Tokranov, V., Yakimov, M., Oktyabrsky, S. (2006) Depletion-mode GaAs metal-oxide-semiconductor field-effect transistor with HfO2 dielectric and germanium interfacial passivation layer. Applied Physics Letters, 89 (22). 222904pp. doi:10.1063/1.2396914
Kim, Hyoung-Sub, Ok, Injo, Zhang, Manhong, Zhu, F., Park, S., Yum, J., Zhao, Han, Lee, Jack C. (2007) Gate oxide scaling down in HfO2–GaAs metal-oxide-semiconductor capacitor using germanium interfacial passivation layer. Applied Physics Letters, 91 (4). 42904pp. doi:10.1063/1.2762291
Zhao, Han, Kim, Hyoung-Sub, Zhu, Feng, Zhang, Manhong, OK, Injo, Park, Sung Il, Yum, Jung Hwan, Lee, Jack C. (2007) Metal-oxide-semiconductor capacitors on GaAs with germanium nitride passivation layer. Applied Physics Letters, 91 (17). 172101pp. doi:10.1063/1.2795802
Park, Sung Il, Ok, Injo, Kim, Hyoung-Sub, Zhu, Feng, Zhang, Manhong, Yum, Jung Hwan, Han, Zhao, Lee, Jack C. (2007) Optimization of electrical characteristics of TiO2-incorporated HfO2 n-type doped gallium arsenide metal oxide semiconductor capacitor with silicon interface passivation layer. Applied Physics Letters, 91 (8). 82908pp. doi:10.1063/1.2775048
Rhee, Se Jong, Zhu, Feng, Kim, Hyoung-Sub, Kang, Chang Yong, Choi, Chang Hwan, Zhang, Manhong, Lee, Tackhwi, Ok, Injo, Krishnan, Siddarth A., Lee, Jack C. (2006) Systematic analysis of silicon oxynitride interfacial layer and its effects on electrical characteristics of high-k HfO2 transistor. Applied Physics Letters, 88 (15). 153515pp. doi:10.1063/1.2192646
Kim, Hyoung-Sub, Ok, I., Zhang, M., Zhu, F., Park, S., Yum, J., Zhao, H., Lee, Jack C., Majhi, Prashant (2008) HfO2-based InP n-channel metal-oxide-semiconductor field-effect transistors and metal-oxide-semiconductor capacitors using a germanium interfacial passivation layer. Applied Physics Letters, 93 (10). 102906pp. doi:10.1063/1.2961119
Zhao, Han, Shahrjerdi, Davood, Zhu, Feng, Zhang, Manhong, Kim, Hyoung-Sub, OK, Injo, Yum, Jung Hwan, Park, Sung Il, Banerjee, Sanjay K., Lee, Jack C. (2008) Gate-first inversion-type InP metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 gate dielectric. Applied Physics Letters, 92 (23). 233508pp. doi:10.1063/1.2937117
Kim, Hyoung-Sub, Ok, Injo, Zhu, Feng, Zhang, M., Park, S., Yum, J., Zhao, H., Majhi, Prashant, Garcia-Gutierrez, Domingo I., Goel, Niti, Tsai, W., Gaspe, C. K., Santos, M. B., Lee, Jack C. (2008) High mobility HfO2-based In0.53Ga0.47As n-channel metal-oxide-semiconductor field effect transistors using a germanium interfacial passivation layer. Applied Physics Letters, 93 (13). 132902pp. doi:10.1063/1.2990645
Zhu, Feng, Kang, Chang Yong, Rhee, Se Jong, Choi, Chang Hwan, Krishnan, Siddarth A., Zhang, Manhong, Kim, Hyoung-Sub, Lee, Taekhwi, Ok, Injo, Thareja, Gaurav, Lee, Jack C. (2006) Mechanism of improved channel carrier mobility for stacked Y2O3∕HfO2 gate dielectric. Applied Physics Letters, 89 (17). 173501pp. doi:10.1063/1.2363141
Ok, InJo, Kim, H., Zhang, M., Zhu, F., Park, S., Yum, J., Zhao, H., Garcia, Domingo, Majhi, Prashant, Lee, Jack C. (2008) Influence of the substrate orientation on the electrical and material properties of GaAs metal-oxide-semiconductor capacitors and self-aligned transistors using HfO2 and silicon interface passivation layer. Applied Physics Letters, 92 (20). 202908pp. doi:10.1063/1.2917823
 
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