Vote for your favorite mineral in #MinCup25! - Cuprosklodowskite vs. Ikaite
It's radioactive #cuprosklodowskite vs ephemeral #ikaite for today's match.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Kim, Hyoung-Sub, Ok, Injo, Zhang, Manhong, Lee, T., Zhu, F., Yu, L., Lee, Jack C., Koveshnikov, S., Tsai, W., Tokranov, V., Yakimov, M., Oktyabrsky, S. (2006) Depletion-mode GaAs metal-oxide-semiconductor field-effect transistor with HfO2 dielectric and germanium interfacial passivation layer. Applied Physics Letters, 89 (22). 222904pp. doi:10.1063/1.2396914

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleDepletion-mode GaAs metal-oxide-semiconductor field-effect transistor with HfO2 dielectric and germanium interfacial passivation layer
JournalApplied Physics Letters
AuthorsKim, Hyoung-SubAuthor
Ok, InjoAuthor
Zhang, ManhongAuthor
Lee, T.Author
Zhu, F.Author
Yu, L.Author
Lee, Jack C.Author
Koveshnikov, S.Author
Tsai, W.Author
Tokranov, V.Author
Yakimov, M.Author
Oktyabrsky, S.Author
Year2006 (November 27)Volume89
Issue22
PublisherAIP Publishing
DOIdoi:10.1063/1.2396914Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8551031Long-form Identifiermindat:1:5:8551031:3
GUID0
Full ReferenceKim, Hyoung-Sub, Ok, Injo, Zhang, Manhong, Lee, T., Zhu, F., Yu, L., Lee, Jack C., Koveshnikov, S., Tsai, W., Tokranov, V., Yakimov, M., Oktyabrsky, S. (2006) Depletion-mode GaAs metal-oxide-semiconductor field-effect transistor with HfO2 dielectric and germanium interfacial passivation layer. Applied Physics Letters, 89 (22). 222904pp. doi:10.1063/1.2396914
Plain TextKim, Hyoung-Sub, Ok, Injo, Zhang, Manhong, Lee, T., Zhu, F., Yu, L., Lee, Jack C., Koveshnikov, S., Tsai, W., Tokranov, V., Yakimov, M., Oktyabrsky, S. (2006) Depletion-mode GaAs metal-oxide-semiconductor field-effect transistor with HfO2 dielectric and germanium interfacial passivation layer. Applied Physics Letters, 89 (22). 222904pp. doi:10.1063/1.2396914
In(2006, November) Applied Physics Letters Vol. 89 (22) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Zhu, F., Koveshnikov, S., Ok, I., Kim, H. S., Zhang, M., Lee, T., Thareja, G., Yu, L., Lee, J. C., Tsai, W., Tokranov, V., Yakimov, M., Oktyabrsky, S. (2007) Depletion-mode GaAs metal-oxide-semiconductor field-effect transistor with amorphous silicon interface passivation layer and thin HfO2 gate oxide. Applied Physics Letters, 91 (4). 43507pp. doi:10.1063/1.2762295
Kim, Hyoung-Sub, Ok, Injo, Zhang, Manhong, Lee, Tackhwi, Zhu, Feng, Yu, Lu, Lee, Jack C. (2006) Metal gate-HfO2 metal-oxide-semiconductor capacitors on n-GaAs substrate with silicon/germanium interfacial passivation layers. Applied Physics Letters, 89 (22). 222903pp. doi:10.1063/1.2396912
Kim, Hyoung-Sub, Ok, Injo, Zhang, Manhong, Zhu, F., Park, S., Yum, J., Zhao, Han, Lee, Jack C. (2007) Gate oxide scaling down in HfO2–GaAs metal-oxide-semiconductor capacitor using germanium interfacial passivation layer. Applied Physics Letters, 91 (4). 42904pp. doi:10.1063/1.2762291
Kim, Hyoung-Sub, Ok, Injo, Zhang, Manhong, Choi, Changhwan, Lee, Tackhwi, Zhu, Feng, Thareja, Gaurav, Yu, Lu, Lee, Jack C. (2006) Ultrathin HfO2 (equivalent oxide thickness=1.1nm) metal-oxide-semiconductor capacitors on n-GaAs substrate with germanium passivation. Applied Physics Letters, 88 (25). 252906pp. doi:10.1063/1.2216023
Zhao, Han, Kim, Hyoung-Sub, Zhu, Feng, Zhang, Manhong, OK, Injo, Park, Sung Il, Yum, Jung Hwan, Lee, Jack C. (2007) Metal-oxide-semiconductor capacitors on GaAs with germanium nitride passivation layer. Applied Physics Letters, 91 (17). 172101pp. doi:10.1063/1.2795802
Koveshnikov, S., Tsai, W., Ok, I., Lee, J. C., Torkanov, V., Yakimov, M., Oktyabrsky, S. (2006) Metal-oxide-semiconductor capacitors on GaAs with high-k gate oxide and amorphous silicon interface passivation layer. Applied Physics Letters, 88 (2). 22106pp. doi:10.1063/1.2164327
Kim, Hyoung-Sub, Ok, Injo, Zhu, Feng, Zhang, M., Park, S., Yum, J., Zhao, H., Majhi, Prashant, Garcia-Gutierrez, Domingo I., Goel, Niti, Tsai, W., Gaspe, C. K., Santos, M. B., Lee, Jack C. (2008) High mobility HfO2-based In0.53Ga0.47As n-channel metal-oxide-semiconductor field effect transistors using a germanium interfacial passivation layer. Applied Physics Letters, 93 (13). 132902pp. doi:10.1063/1.2990645
Kim, Hyoung-Sub, Ok, I., Zhang, M., Zhu, F., Park, S., Yum, J., Zhao, H., Lee, Jack C., Majhi, Prashant (2008) HfO2-based InP n-channel metal-oxide-semiconductor field-effect transistors and metal-oxide-semiconductor capacitors using a germanium interfacial passivation layer. Applied Physics Letters, 93 (10). 102906pp. doi:10.1063/1.2961119
Kim, Hyoung-Sub, Ok, I., Zhang, M., Zhu, F., Park, S., Yum, J., Zhao, H., Lee, Jack C., Oh, Jungwoo, Majhi, Prashant (2008) Inversion-type enhancement-mode HfO2-based GaAs metal-oxide-semiconductor field effect transistors with a thin Ge layer. Applied Physics Letters, 92 (3). 32907pp. doi:10.1063/1.2838294
Park, Sung Il, Ok, Injo, Kim, Hyoung-Sub, Zhu, Feng, Zhang, Manhong, Yum, Jung Hwan, Han, Zhao, Lee, Jack C. (2007) Optimization of electrical characteristics of TiO2-incorporated HfO2 n-type doped gallium arsenide metal oxide semiconductor capacitor with silicon interface passivation layer. Applied Physics Letters, 91 (8). 82908pp. doi:10.1063/1.2775048
Zhao, Han, Shahrjerdi, Davood, Zhu, Feng, Zhang, Manhong, Kim, Hyoung-Sub, OK, Injo, Yum, Jung Hwan, Park, Sung Il, Banerjee, Sanjay K., Lee, Jack C. (2008) Gate-first inversion-type InP metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 gate dielectric. Applied Physics Letters, 92 (23). 233508pp. doi:10.1063/1.2937117
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 14, 2025 22:44:13
Go to top of page