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Tsia, J. M., Ling, C. C., Beling, C. D., Fung, S. (2002) Electron emission from deep level defects EL2 and EL6 in semi-insulating GaAs observed by positron drift velocity transient measurements. Journal of Applied Physics, 92 (6). 3410-3412 doi:10.1063/1.1503162

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Reference TypeJournal (article/letter/editorial)
TitleElectron emission from deep level defects EL2 and EL6 in semi-insulating GaAs observed by positron drift velocity transient measurements
JournalJournal of Applied Physics
AuthorsTsia, J. M.Author
Ling, C. C.Author
Beling, C. D.Author
Fung, S.Author
Year2002 (September 15)Volume92
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.1503162Search in ResearchGate
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Mindat Ref. ID5116721Long-form Identifiermindat:1:5:5116721:3
GUID0
Full ReferenceTsia, J. M., Ling, C. C., Beling, C. D., Fung, S. (2002) Electron emission from deep level defects EL2 and EL6 in semi-insulating GaAs observed by positron drift velocity transient measurements. Journal of Applied Physics, 92 (6). 3410-3412 doi:10.1063/1.1503162
Plain TextTsia, J. M., Ling, C. C., Beling, C. D., Fung, S. (2002) Electron emission from deep level defects EL2 and EL6 in semi-insulating GaAs observed by positron drift velocity transient measurements. Journal of Applied Physics, 92 (6). 3410-3412 doi:10.1063/1.1503162
In(2002, September) Journal of Applied Physics Vol. 92 (6) AIP Publishing

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Tsia, M., Fung, S., Beling, C.D. (2001) Positron Deep-Level Transient Spectroscopy in Semi-Insulating-GaAs Using the Positron Velocity Transient Method. Materials Science Forum, 363. 117-119 doi:10.4028/www.scientific.net/msf.363-365.117
Shan, Y. Y., Ling, C. C., Deng, A. H., Panda, B. K., Beling, C. D., Fung, S. (1997) EL2 deep-level transient study in semi-insulating GaAs using positron-lifetime spectroscopy. Physical Review B, 55 (12) 7624-7628 doi:10.1103/physrevb.55.7624
Hu, Y. F., Ling, C. C., Beling, C. D., Fung, S. (1997) Saturated electric field effect at semi-insulating GaAs-metal junctions studied with a low energy positron beam. Journal of Applied Physics, 82 (8). 3891-3899 doi:10.1063/1.365693
Au, H. L., Ling, C. C., Panda, B. K., Lee, T. C., Beling, C. D., Fung, S. (1994) EL2Deep Donor State in Semi-Insulating GaAs Revealed by Frequency Dependent Positron Mobility Measurements. Physical Review Letters, 73 (20). 2732-2735 doi:10.1103/physrevlett.73.2732
Chen, T. P., Liu, Y. C., Fung, S., Beling, C. D. (1995) Interfacial Fermi level and surface band bending in Ni/semi‐insulating GaAs contact. Journal of Applied Physics, 78 (7). 4796-4798 doi:10.1063/1.359762
Chen, X. D., Fung, S., Ling, C. C., Beling, C. D., Gong, M. (2003) Deep level transient spectroscopic study of neutron-irradiated n-type 6H–SiC. Journal of Applied Physics, 94 (5). 3004-3010 doi:10.1063/1.1598629
Ling, C. C., Shek, Y. F., Huang, A. P., Fung, S., Beling, C. D. (1999) Electric-field distribution in Au–semi-insulating GaAs contact investigated by positron-lifetime technique. Physical Review B, 59 (8) 5751-5758 doi:10.1103/physrevb.59.5751
Chen, X. D., Ling, C. C., Gong, M., Fung, S., Beling, C. D., Brauer, G., Anwand, W., Skorupa, W. (2005) Anomalous behaviors of E1∕E2 deep level defects in 6H silicon carbide. Applied Physics Letters, 86 (3). 31903pp. doi:10.1063/1.1853523
Mitchel, W. C., Jiménez, J. (1994) Photocurrent transients in semi‐insulating GaAs, effects of EL2 and other defects. Journal of Applied Physics, 75 (6). 3060-3070 doi:10.1063/1.356154
Chen, X. D., Ling, C. C., Fung, S., Beling, C. D., Gong, M., Henkel, T., Tanoue, H., Kobayashi, N. (2003) Beryllium implantation induced deep level defects inp-type 6H–silicon carbide. Journal of Applied Physics, 93 (5). 3117-3119 doi:10.1063/1.1542687
Gong, M., Fung, S., Beling, C. D., You, Zhipu (1999) A deep level transient spectroscopy study of electron irradiation induced deep levels in p-type 6H–SiC. Journal of Applied Physics, 85 (10). 7120-7122 doi:10.1063/1.370520
 
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